Mechanisms of metal-insulator transitions in ultrathin SrMoO3films.

As the thickness of a transition metal oxide thin film is reduced to several unit cells, dimensional and interfacial effects modulate its structure and properties, and initiate low-dimension quantum phase transitions different from its bulk counterparts. To check if a metal-insulator transition (MIT) occurs to a low-dimensional 4d2electron systems, we investigated SrMoO3thin films by characterizing and analyzing their lattice structures, electric transport properties and electronic states. Among various dimensional effects and interfacial effects, quantum confinement effect (QCE) was discerned as the dominating mechanism of the thickness-driven MIT. Surface/interface scattering contributes to the residual resistivity while the competition of several interactions modulated by QCE governs the temperature dependence of the resistivity of SrMoO3ultrathin films.

Growth, electronic structure and superconductivity of ultrathin epitaxial CoSi2films.

We report growth, electronic structure and superconductivity of ultrathin epitaxial CoSi2films on Si (111). At low coverages, preferred islands with 2, 5 and 6 monolayers height develop, which agrees well with the surface energy calculation. We observe clear quantum well states as a result of electronic confinement and their dispersion agrees well with density functional theory calculations, indicating weak correlation effect despite strong contributions from Co 3delectrons.Ex situtransport measurements show that superconductivity persists down to at least 10 monolayers, with reducedTcbut largely enhanced upper critical field. Our study opens up the opportunity to study the interplay between quantum confinement, interfacial symmetry breaking and superconductivity in an epitaxial silicide film, which is technologically relevant in microelectronics.

Hydrogen Impurity Defects in Rutile TiO2.

Hydrogen-related defects play crucial roles in determining physical properties of their host oxides. In this work, we report our systematic experimental and theoretical (based on density functional theory) studies of the defect states formed in hydrogenated-rutile TiO2 in gaseous H2 and atomic H. In gas-hydrogenated TiO2, the incorporated hydrogen tends to occupy the oxygen vacancy site and negatively charged. The incorporated hydrogen takes the interstitial position in atom-hydrogenated TiO2, forming a weak O-H bond with the closest oxygen ion, and becomes positive. Both states of hydrogen affect the electronic structure of TiO2 mainly through changes of Ti 3d and O 2p states instead of the direct contributions of hydrogen. The resulted electronic structures of the hydrogenated TiO2 are manifested in modifications of the electrical and optical properties that will be useful for the design of new materials capable for green energy economy.

Insight into Metalized Interfaces in Nano Devices by Surface Analytical Techniques.

Connections between metals and heterogeneous solid state materials form buried interfaces. These ubiquitous structures play an essential role in determining the performances of many nano- and microdevices. However, the information about the chemistry, structure, and properties of these real interfaces is intrinsically difficult to extract by traditional techniques. Therefore, approaches to efficiently discovering metalized interfaces are in high demand. Here, we demonstrate the transformation of nanoscale metal/oxide interface problems into surface problems through a novel metal-hydrogenation detaching method. We applied this technique to study the thickness dependence in Pb(Zr,Ti)O3 (PZT) ferroelectric thin films, a long-standing interface problem in a model metal/insulator device, and this allowed comprehensive surface analytical techniques to be adapted. A nonstoichiometric interfacial layer of 4.1 nm thick with low mass density, low permittivity, and weak ferroelectricity was quantified at the Pt/PZT interface and attributed to the preferential diffusions among the compositional elements. Targeted interface engineering by Pb rebalance led to a substantial recovery of ferroelectric properties. Our results therefore pave the way to a better understanding of metallized interface in ferroelectric and dielectric nanodevices. We hope that more useful information about metalized interfaces of other solid materials could, analogously, be accessed by surface analytical techniques.

Aligned amorphous and microcrystalline Si nanorods by glancing angle deposition at low temperature.

Aligned amorphous and crystallized silicon nanorods (SiNRs) were successfully fabricated at low temperatures using radio frequency magnetron sputtering and hot wire chemical vapor deposition with glancing angle incident flux. The influences of the deposition pressure, sputtering power, substrate rotation and hydrogen dilution ratio on the diameter, density, orientation and crystallization of the Si nanorods were systematically investigated. With increasing sputtering power, the density of Si nanorods decreases and the diameter of SiNRs increases. The pressure has the opposite effect on the growth of SiNRs compared with the sputtering power. By combining glancing angle deposition (GLAD) with the hydrogen diluted silane in hot wire chemical vapor deposition (HWCVD), aligned crystallized Si nanorods with a crystalline volume fraction of 0.55 were achieved under a substrate temperature of 140 degrees C. The Si nanorods have been tested for photovoltaic application.

Distribution of Cu and Pb in particle size fractions of urban soils from different city zones of Nanjing, China.

Soil samples from 4 defined city zones of Nanjing were randomly collected at 0-5 cm and 5-20 cm intervals and size fractions of soil particles were separated from undisturbed bulk soils by low energy dispersion procedure. The total contents of Cu and Pb in the different particle size fractions of the urban soils were analyzed by HNO3-HF-HClO4 digestion and flame atomic absorption spectrophotometer determination. The total content of Cu and Pb in soil particle size fractions varied with their size and with city zones as well. Both the content and variation with the size fractions of Pb was bigger than of Cu supporting our previous finding that there was Pb pollution to different degrees in the urban soils although the two elements were generally enriched in clay-sized fraction. Contaminated Pb tended to be preferentially enriched in the size fraction of 2000-250 microm and clay-sized fraction. While the size fractions of the soils from newly developed and preserved area contained smaller amount of Cu and Pb, the partitioning of them in coarse and fine particle size fractions were insignificant compared to that from inner residence and commercial area. The very high Pb level over 150 mg/kg of the fine particle fractions from the soils of the inner city could be a cause of high blood Pb level reported of children from the city as acute exposure to Pb of fine particles of the urban soil might occur by soil ingestion and inhalation by young children. Thus, much attention should be paid to the partitioning of toxic metals in fine soil particles of the urban soils and countermeasures against high health risk of Pb exposure by soil ingestion and dust inhalation should be practiced against the health problem of blood Pb for young children from the cities.