Consequences of quantum noise control for the relaxation resonance frequency and phase noise in heterogeneous Silicon/III-V lasers.

We have recently introduced a new semiconductor laser design which is based on an extreme, 99%, reduction of the laser mode absorption losses. In previous reports, we showed that this was achieved by a laser mode design which confines the great majority of the modal energy (> 99%) in a low-loss Silicon guiding layer rather than in highly-doped, thus lossy, III-V p[Formula: see text] and n[Formula: see text] layers, which is the case with traditional III-V lasers. The resulting reduced electron-field interaction was shown to lead to a commensurate reduction of the spontaneous emission rate by the excited conduction band electrons into the laser mode and thus to a reduction of the frequency noise spectral density of the laser field often characterized by the Schawlow-Townes linewidth. In this paper, we demonstrate theoretically and present experimental evidence of yet another major beneficial consequence of the new laser design: a near total elimination of the contribution of amplitude-phase coupling (the Henry [Formula: see text] parameter) to the frequency noise at "high" frequencies. This is due to an order of magnitude lowering of the relaxation resonance frequency of the laser. Here, we show that the practical elimination of this coupling enables yet another order of magnitude reduction of the frequency noise at high frequencies, resulting in a quantum-limited frequency noise spectral density of 130 Hz[Formula: see text]/Hz (linewidth of 0.4 kHz) for frequencies beyond the relaxation resonance frequency 680 MHz. This development is of key importance in the development of semiconductor lasers with higher coherence, particularly in the context of integrated photonics with a small laser footprint without requiring any sort of external cavity.

Kicking the habit/semiconductor lasers without isolators.

In this paper, we propose and demonstrate a solution to the problem of coherence degradation and collapse caused by the back reflection of laser power into the laser resonator. The problem is most onerous in semiconductor lasers (SCLs), which are normally coupled to optical fibers, and results in the fact that practically every commercial SCL has appended to it a Faraday-effect isolator that blocks most of the reflected optical power preventing it from entering the laser resonator. The isolator assembly is many times greater in volume and cost than the SCL itself. This problem has resisted a practical and economic solution despite decades of effort and remains the main obstacle to the emergence of a CMOS-compatible photonic integrated circuit technology. A simple solution to the problem is thus of major economic and technological importance. We propose a strategy aimed at weaning semiconductor lasers from their dependence on external isolators. Lasers with large internal Q-factors can tolerate large reflections, limited only by the achievable Q values, without coherence collapse. A laser design is demonstrated on the heterogeneous Si/III-V platform that can withstand 25 dB higher reflected power compared to commercial DFB lasers. Larger values of internal Qs, achievable by employing resonator material of lower losses and improved optical design, should further increase the isolation margin and thus obviate the need for isolators altogether.

Higher-order QAM data transmission using a high-coherence hybrid Si/III-V semiconductor laser.

We experimentally demonstrate the use of a high-coherence hybrid silicon (Si)/III-V semiconductor laser as the light source for a transmitter generating 20 Gbaud 16- and 64- quadrature amplitude modulated (QAM) data signals over an 80 km single-mode fiber (SMF) link. The hybrid Si/III-V laser has a measured Schawlow-Townes linewidth of ${\sim}{10}\;{\rm kHz}$∼10kHz, which is achieved by storing modal optical energy in low-loss Si, rather than the relatively lossy III-V materials. We measure a received bit error rate (BER) of ${4.1} \times {{10}^{ - 3}}$4.1×10-3 when transmitting the 64-QAM data over an 80 km SMF using the hybrid Si/III-V laser. Furthermore, we measure a BER of $ {\lt} {1} \times {{10}^{ - 4}}$<1×10-4 with the Viterbi-Viterbi digital carrier phase recovery method when transmitting the 16-QAM data over an 80 km SMF using the hybrid Si/III-V laser. This performance is achieved at power penalties lower than those obtained with an exemplary distributed feedback laser and slightly higher than those with an exemplary narrow-linewidth external cavity laser.

Determining the Quality Factor of Dielectric Ceramic Mixtures with Dielectric Constants in the Microwave Frequency Range.

Microwave dielectric ceramic materials are extensively utilized in microwave applications because of their high dielectric constants and quality factors. These applications also require ceramics of zero temperature coefficients at the resonant frequency (τ f ), which can be realized through mixing a ceramic that one is interested in with another ceramic with -τ f , or by performing the ionic substitution. With the mixing/ionic substitution, it is indispensable to compute the quality factors precisely. Previous study indicates that the quality factor depends on the grain size, porosity, internal strain, structure, phase evolution, and conductivity etc. Here we derive a quality factor formula based on the definition, which works very well for multiphase composites, single phase solid solutions, and equivalent ionic substituted single phase materials. Our formula calculation and fits to the previous experimental results demonstrate that the quality factor of the ceramic mixtures strongly depend on the dielectric constants and the dielectric constant variation index. Our results suggest that the impacts from grain size, porosity, and internal strain etc. can be summarized to the dielectric constant or dielectric constant variation index, which is of great importance for future design of high performance microwave dielectric ceramics.

Ultrashort pulse generation by semiconductor mode-locked lasers at 760 nm.

We demonstrate the first semiconductor mode-locked lasers for ultrashort pulse generation at the 760 nm waveband. Multi-section laser diodes based on an AlGaAs multi-quantum-well structure were passively mode-locked, resulting in the generation of pulses at around 766 nm, with pulse durations down to ~4 ps, at pulse repetition rates of 19.4 GHz or 23.2 GHz (with different laser cavity lengths of 1.8 mm and 1.5 mm, respectively). The influence of the bias conditions on the mode-locking characteristics was investigated for these new lasers, revealing trends which can be ascribed to the interplay of dynamical processes in the saturable absorber and gain sections. It was also found that the front facet reflectivity played a key role in the stability of mode-locking and the occurrence of self-pulsations. These lasers hold significant promise as light sources for multi-photon biomedical imaging, as well as in other applications such as frequency conversion into the ultraviolet and radio-over-fibre communications.

1.06-µm InGaAs/GaAs multiple-quantum-well optical thyristor lasers with a PiNiN structure.

InGaAs/GaAs multiple quantum well (MQW)-depleted optical thyristor lasers operating at 1.06 µm with a waveguide-type PiNiN structure is presented for the first time. The optical thyristor lasers clearly show nonlinear S-shaped current-voltage and lasing characteristics. The measured switching voltage and current are 5 V and 1 mA, respectively. The holding voltage and current are 2.6 V and 3.6 mA, respectively. A relatively high output light power of 30 mW per facet at room temperature is achieved. The lasing wavelength is 1.055 µm at a bias current of 80 mA at 25 °C.