Fabry-Pérot cavity sensors for multipoint on-column micro gas chromatography detection.

We developed and characterized a Fabry-Pérot (FP) sensor module based micro gas chromatography (microGC) detector for multipoint on-column detection. The FP sensor was fabricated by depositing a thin layer of metal and a layer of gas-sensitive polymer consecutively on the endface of an optical fiber, which formed the FP cavity. Light partially reflected from the metal layer and the polymer-air interface generated an interference spectrum, which shifted as the polymer layer absorbed the gas analyte. The FP sensor module was then assembled by inserting the FP sensor into a hole drilled in the wall of a fused-silica capillary, which can be easily connected to the conventional gas chromatography (GC) column through a universal quick seal column connector, thus enabling on-column real-time detection. We characterized the FP sensor module based microGC detector. Sensitive detection of various gas analytes was achieved with subnanogram detection limits. The rapid separation capability of the FP sensor module assembled with both single- and tandem-column systems was demonstrated, in which gas analytes having a wide range of polarities and volatilities were well-resolved. The tandem-column system obtained increased sensitivity and selectivity by employing two FP sensor modules coated with different polymers, showing great system versatility.

Structure and growth of vapor-deposited n-dotriacontane films studied by X-ray reflectivity.

We have used synchrotron X-ray reflectivity measurements to investigate the structure of n-dotriacontane (n-C(32)H(66) or C32) films deposited from the vapor phase onto a SiO(2)-coated Si(100) surface. Our primary motivation was to determine whether the structure and growth mode of these films differ from those deposited from solution on the same substrate. The vapor-deposited films had a thickness of approximately 50 A thick as monitored in situ by high-resolution ellipsometry and were stable in air. Similar to the case of solution-deposited C32 films, we find that film growth in vacuum begins with a nearly complete bilayer adjacent to the SiO(2) surface formed by C32 molecules aligned with their long axis parallel to the interface followed by one or more partial layers of perpendicular molecules. These molecular layers coexist with bulk particles at higher coverages. Furthermore, after thermally cycling our vapor-deposited samples at atmospheric pressure above the bulk C32 melting point, we find the structure of our films as a function of temperature to be consistent with a phase diagram inferred previously for similarly treated solution-deposited films. Our results resolve some of the discrepancies that Basu and Satija (Basu, S.; Satija, S. K. Langmuir 2007, 23, 8331) found between the structure of vapor-deposited and solution-deposited films of intermediate-length alkanes at room temperature.