Visible-to-Near-Infrared Mechanoluminescence in Bi-Activated Spinel Compounds for Multiple Information Anticounterfeiting.

Mechanoluminescence (ML) is the nonthermal luminescence generated in the process of force-to-light conversion, which has broad prospects in stress sensing, wearable devices, biomechanics, and multiple information anticounterfeiting. Multivalence emitter ions utilize their own self-reduction process to realize multiband ML without introducing another dopant, such as Eu3+/Eu2+, Sm3+/Sm2+, and Mn4+/Mn2+. However, self-reduction-induced ML in bismuth-activated materials has rarely been reported so far. In this work, a novel visible-to-near-infrared (vis-NIR) ML induced by the self-reduction of Bi3+ to Bi2+ in the spinel-type compound (MgGa2O4) is reported. The photoluminescence (PL) spectra, PL excitation (PLE) spectra, and PL lifetime curves demonstrate that Bi3+/Bi2+ ions are the main luminescence centers. Notably, the possible self-reduction model is proposed, where a magnesium vacancy (VMg″) is considered as the driving force for the self-reduction of Bi3+ to Bi2+. Furthermore, an oxygen vacancy (VO••) is confirmed by electron paramagnetic resonance (EPR) spectroscopy. Combined with thermoluminescence (TL) glow curves and ML spectra, a plausible trap-controlled ML mechanism is illustrated, where electron-hole (VO••/VMg″) pairs play a significant role in capturing electrons and holes. It is worth noting that the proof-of-concept dual-mode electronic signature application is implemented based on the flexible ML film, which improves the capabilities of signature anticounterfeiting for high-level security applications. Besides, multistimulus-responsive luminescence behaviors of the ML film are realized under the excitation of a 254 nm UV lamp, thermal disturbance, 980 nm laser, and mechanical stimuli. In general, this study provides new insights into designing vis-NIR ML materials toward wider application possibilities.

Cation-defect-induced self-reduction towards efficient mechanoluminescence in Mn2+-activated perovskites.

Mechanoluminescent (ML) materials have shown promising prospects for various applications, e.g. in stress sensing, information anti-counterfeiting and bio stress imaging fields. However, the development of trap-controlled ML materials is still limited, because the trap formation mechanism is not always clear. Here, inspired by a defect-induced Mn4+ → Mn2+ self-reduction process in suitable host crystal structures, a cation vacancy model is creatively proposed to determine the potential trap-controlled ML mechanism. Combined with the theoretical prediction and experimental results, both the self-reduction process and ML mechanism are clarified in detail, where the contribution of and defects dominates the ML luminescent process. Electrons/holes are mainly captured by the anionic/cationic defects, followed by the combination of electrons and holes to transfer energy to the Mn2+ 3d states under mechanical stimuli. Based on the multi-mode luminescent features excited by X-ray, 980 nm laser and 254 nm UV lamp, together with the excellent persistent luminescence and ML, a potential application in advanced anti-counterfeiting is demonstrated. These results will deepen the understanding of the defect-controlled ML mechanism, and inspire more defect-engineering strategies to develop more high-performance ML phosphors for practical application.