Comparing Thickness and Doping-Induced Effects on the Normal States of Infinite-Layer Electron-Doped Cuprates: Is There Anything to Learn?

We grew Sr1-xLaxCuO2 thin films and SrCuO2/Sr0.9La0.1CuO2/SrCuO2 trilayers by reflection high-energy diffraction-calibrated layer-by-layer molecular beam epitaxy, to study their electrical transport properties as a function of the doping and thickness of the central Sr0.9La0.1CuO2 layer. For the trilayer samples, as already observed in underdoped SLCO films, the electrical resistivity versus temperature curves as a function of the central layer thickness show, for thicknesses thinner than 20 unit cells, sudden upturns in the low temperature range with the possibility for identifying, in the normal state, the T* and a T** temperatures, respectively, separating high-temperature linear behavior and low-temperature quadratic dependence. By plotting the T* and T** values as a function of TConset for both the thin films and the trilayers, the data fall on the same curves. This result suggests that, for the investigated trilayers, the superconducting critical temperature is the important parameter able to describe the normal state properties and that, in the limit of very thin central layers, such properties are mainly influenced by the modification of the energy band structure and not by interface-related disorder.

Vanishing nematic order beyond the pseudogap phase in overdoped cuprate superconductors.

During the last decade, translational and rotational symmetry-breaking phases-density wave order and electronic nematicity-have been established as generic and distinct features of many correlated electron systems, including pnictide and cuprate superconductors. However, in cuprates, the relationship between these electronic symmetry-breaking phases and the enigmatic pseudogap phase remains unclear. Here, we employ resonant X-ray scattering in a cuprate high-temperature superconductor [Formula: see text] (Nd-LSCO) to navigate the cuprate phase diagram, probing the relationship between electronic nematicity of the Cu 3d orbitals, charge order, and the pseudogap phase as a function of doping. We find evidence for a considerable decrease in electronic nematicity beyond the pseudogap phase, either by raising the temperature through the pseudogap onset temperature T* or increasing doping through the pseudogap critical point, p*. These results establish a clear link between electronic nematicity, the pseudogap, and its associated quantum criticality in overdoped cuprates. Our findings anticipate that electronic nematicity may play a larger role in understanding the cuprate phase diagram than previously recognized, possibly having a crucial role in the phenomenology of the pseudogap phase.

Astaxanthin alleviates spinal cord ischemia-reperfusion injury via activation of PI3K/Akt/GSK-3ß pathway in rats.

BACKGROUND: Ischemia-reperfusion injury of the spinal cord (SCII) often leads to unalterable neurological deficits, which may be associated with apoptosis induced by oxidative stress and inflammation. Astaxanthin (AST) is a strong antioxidant and anti-inflammatory agent with multitarget neuroprotective effects. This study aimed to investigate the potential therapeutic effects of AST for SCII and the molecular mechanism. METHODS: Rat models of SCII with abdominal aortic occlusion for 40 min were carried out to investigate the effects of AST on the recovery of SCII. Tarlov's scores were used to assess the neuronal function; HE and TUNEL staining were used to observe the pathological morphology of lesions. Neuron oxidative stress and inflammation were measured using commercial detection kits. Flow cytometry was conducted to assess the mitochondrial swelling degree. Besides, Western blot assay was used to detect the expression of PI3K/Akt/GSK-3ß pathway-related proteins, as well as NOX2 and NLRP3 proteins. RESULTS: The results demonstrated that AST pretreatment promoted the hind limb motor function recovery and alleviated the pathological damage induced by SCII. Moreover, AST significantly enhanced the antioxidative stress response and attenuated mitochondrial swelling. However, AST pretreatment hardly inhibited the levels of proinflammatory cytokines after SCII. Most importantly, AST activated p-Akt and p-GSK-3ß expression levels. Meanwhile, cotreatment with LY294002 (a PI3K inhibitor) was found to abolish the above protective effects observed with the AST pretreatment. CONCLUSION: Overall, these results suggest that AST pretreatment not only mitigates pathological tissue damage but also effectively improves neural functional recovery following SCII, primarily by alleviating oxidative stress but not inhibiting inflammation. A possible underlying molecular mechanism of AST may be mainly attributed to the activation of PI3K/Akt/GSK-3ß pathway.

Lifshitz transition from valence fluctuations in YbAl3.

In mixed-valent Kondo lattice systems, such as YbAl3, interactions between localized and delocalized electrons can lead to fluctuations between two different valence configurations with changing temperature or pressure. The impact of this change on the momentum-space electronic structure is essential for understanding their emergent properties, but has remained enigmatic. Here, by employing a combination of molecular beam epitaxy and in situ angle-resolved photoemission spectroscopy we show that valence fluctuations can lead to dramatic changes in the Fermi surface topology, even resulting in a Lifshitz transition. As the temperature is lowered, a small electron pocket in YbAl3 becomes completely unoccupied while the low-energy ytterbium (Yb) 4f states become increasingly itinerant, acquiring additional spectral weight, longer lifetimes, and well-defined dispersions. Our work presents a unified picture of how local valence fluctuations connect to momentum-space concepts such as band filling and Fermi surface topology in mixed valence systems.How the electronic structure of a mixed-valence system changes with respect to local chemical environment remains elusive. Here, Chatterjee et al. show that valence fluctuations of YbAl3 can lead to dramatic changes in the Fermi surface topology in reciprocal space.

Electron Doping of the Parent Cuprate La_{2}CuO_{4} without Cation Substitution.

In the cuprates, carrier doping of the Mott insulating parent state is necessary to realize superconductivity as well as a number of other exotic states involving charge or spin density waves. Cation substitution is the primary method for doping carriers into these compounds, and is the only known method for electron doping in these materials. Here, we report electron doping without cation substitution in epitaxially stabilized thin films of La_{2}CuO_{4} grown via molecular-beam epitaxy. We use angle-resolved photoemission spectroscopy to directly measure their electronic structure and conclusively determine that these compounds are electron doped with a carrier concentration of 0.09±0.02 e^{-}/Cu. We propose that intrinsic defects, most likely oxygen vacancies, are the sources of doped electrons in these materials. Our results suggest a new approach to electron doping in the cuprates, one which could lead to a more detailed experimental understanding of their properties.

Hierarchical spin-orbital polarization of a giant Rashba system.

The Rashba effect is one of the most striking manifestations of spin-orbit coupling in solids and provides a cornerstone for the burgeoning field of semiconductor spintronics. It is typically assumed to manifest as a momentum-dependent splitting of a single initially spin-degenerate band into two branches with opposite spin polarization. Combining polarization-dependent and resonant angle-resolved photoemission measurements with density functional theory calculations, we show that the two "spin-split" branches of the model giant Rashba system BiTeI additionally develop disparate orbital textures, each of which is coupled to a distinct spin configuration. This necessitates a reinterpretation of spin splitting in Rashba-like systems and opens new possibilities for controlling spin polarization through the orbital sector.

Polycrystalline graphene with single crystalline electronic structure.

We report the scalable growth of aligned graphene and hexagonal boron nitride on commercial copper foils, where each film originates from multiple nucleations yet exhibits a single orientation. Thorough characterization of our graphene reveals uniform crystallographic and electronic structures on length scales ranging from nanometers to tens of centimeters. As we demonstrate with artificial twisted graphene bilayers, these inexpensive and versatile films are ideal building blocks for large-scale layered heterostructures with angle-tunable optoelectronic properties.