Evidence for Trans-Oligoene Chain Formation in Graphene Induced by Iodine.

Functionalization of pristine graphene by hydrogen and fluorine is well studied, resulting in graphane and fluorographene structures. In contrast, functionalization of pristine graphene with iodine has not been reported. Here, the functionalization of graphene with iodine using photochemical activation is presented, which is thermally reversible at 400 °C. Additional dispersive dominant Raman modes that are probed by resonance Raman spectroscopy are observed. Additionally, iodinated graphene is probed by Kelvin probe force microscopy and by transport measurements showing p-doping surpassing non-covalent iodine doping by charge transfer-complex formation. The emergent Raman modes combined with strong p-doping indicate that iodine functionalization is distinct from simple iodine doping. A reaction mechanism based on these findings is proposed, identifying the large size of iodine atoms as the probable cause governing regiochemically controlled addition due to steric hinderance of reactive sites. The modification of the electronic structure is explained by the confinement of 1D trans-oligoene chains between sp3 -defects. These results demonstrate the uniqueness of iodine reactivity toward graphene and the modification of the electronic structure of iodinated graphene, highlighting its dependence on the spatial arrangement of substituents.

Generating intense electric fields in 2D materials by dual ionic gating.

The application of an electric field through two-dimensional materials (2DMs) modifies their properties. For example, a bandgap opens in semimetallic bilayer graphene while the bandgap shrinks in few-layer 2D semiconductors. The maximum electric field strength achievable in conventional devices is limited to ≤0.3 V/nm by the dielectric breakdown of gate dielectrics. Here, we overcome this limit by suspending a 2DM between two volumes of ionic liquid (IL) with independently controlled potentials. The potential difference between the ILs falls across an ultrathin layer consisting of the 2DM and the electrical double layers above and below it, producing an intense electric field larger than 4 V/nm. This field is strong enough to close the bandgap of few-layer WSe2, thereby driving a semiconductor-to-metal transition. The ability to apply fields an order of magnitude higher than what is possible in dielectric-gated devices grants access to previously-inaccessible phenomena occurring in intense electric fields.

High-Power-Density Energy-Harvesting Devices Based on the Anomalous Nernst Effect of Co/Pt Magnetic Multilayers.

The anomalous Nernst effect (ANE) is a thermomagnetic phenomenon with potential applications in thermal energy harvesting. While many recent works studied the approaches to increase the ANE coefficient of materials, relatively little effort was devoted to increasing the power supplied by the effect. Here, we demonstrate a nanofabricated device with record power density generated by the ANE. To accomplish this, we fabricate micrometer-sized devices in which the thermal gradient is 3 orders of magnitude higher than conventional macroscopic devices. In addition, we use Co/Pt multilayers, a system characterized by a high ANE thermopower (∼1 µV/K), low electrical resistivity, and perpendicular magnetic anisotropy. These innovations allow us to obtain power densities of around 13 ± 2 W/cm3. We believe that this design may find uses in harvesting wasted energy, e.g., in electronic devices.

Controlled assembly of artificial 2D materials based on the transfer of oxo-functionalized graphene.

Functionalized 2D materials have unique properties, but are currently not used for the assembly of van der Waals heterostructures. Here, we present the controlled transfer of artificially synthesized, polar and highly transparent oxo-functionalized graphene, which can decouple graphene layers.

Publisher Correction: Controlled dynamic screening of excitonic complexes in 2D semiconductors.

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Controlled dynamic screening of excitonic complexes in 2D semiconductors.

We report a combined theoretical/experimental study of dynamic screening of excitons in media with frequency-dependent dielectric functions. We develop an analytical model showing that interparticle interactions in an exciton are screened in the range of frequencies from zero to the characteristic binding energy depending on the symmetries and transition energies of that exciton. The problem of the dynamic screening is then reduced to simply solving the Schrodinger equation with an effectively frequency-independent potential. Quantitative predictions of the model are experimentally verified using a test system: neutral, charged and defect-bound excitons in two-dimensional monolayer WS2, screened by metallic, liquid, and semiconducting environments. The screening-induced shifts of the excitonic peaks in photoluminescence spectra are in good agreement with our model.