Collective super- and subradiant dynamics between distant optical quantum emitters.

Photon emission is the hallmark of light-matter interaction and the foundation of photonic quantum science, enabling advanced sources for quantum communication and computing. Although single-emitter radiation can be tailored by the photonic environment, the introduction of multiple emitters extends this picture. A fundamental challenge, however, is that the radiative dipole-dipole coupling rapidly decays with spatial separation, typically within a fraction of the optical wavelength. We realize distant dipole-dipole radiative coupling with pairs of solid-state optical quantum emitters embedded in a nanophotonic waveguide. We dynamically probe the collective response and identify both super- and subradiant emission as well as means to control the dynamics by proper excitation techniques. Our work constitutes a foundational step toward multiemitter applications for scalable quantum-information processing.

A bright and fast source of coherent single photons.

A single-photon source is an enabling technology in device-independent quantum communication1, quantum simulation2,3, and linear optics-based4 and measurement-based quantum computing5. These applications employ many photons and place stringent requirements on the efficiency of single-photon creation. The scaling on efficiency is typically an exponential function of the number of photons. Schemes taking full advantage of quantum superpositions also depend sensitively on the coherence of the photons, that is, their indistinguishability6. Here, we report a single-photon source with a high end-to-end efficiency. We employ gated quantum dots in an open, tunable microcavity7. The gating provides control of the charge and electrical tuning of the emission frequency; the high-quality material ensures low noise; and the tunability of the microcavity compensates for the lack of control in quantum dot position and emission frequency. Transmission through the top mirror is the dominant escape route for photons from the microcavity, and this output is well matched to a single-mode fibre. With this design, we can create a single photon at the output of the final optical fibre on-demand with a probability of up to 57% and with an average two-photon interference visibility of 97.5%. Coherence persists in trains of thousands of photons with single-photon creation at a repetition rate of 1 GHz.

Spin-photon interface and spin-controlled photon switching in a nanobeam waveguide.

The spin of an electron is a promising memory state and qubit. Connecting spin states that are spatially far apart will enable quantum nodes and quantum networks based on the electron spin. Towards this goal, an integrated spin-photon interface would be a major leap forward as it combines the memory capability of a single spin with the efficient transfer of information by photons. Here, we demonstrate such an efficient and optically programmable interface between the spin of an electron in a quantum dot and photons in a nanophotonic waveguide. The spin can be deterministically prepared in the ground state with a fidelity of up to 96%. Subsequently, the system is used to implement a single-spin photonic switch, in which the spin state of the electron directs the flow of photons through the waveguide. The spin-photon interface may enable on-chip photon-photon gates, single-photon transistors and the efficient generation of a photonic cluster state.

Low temperature growth of gallium oxide thin films via plasma enhanced atomic layer deposition.

Herein we describe an efficient low temperature (60-160 °C) plasma enhanced atomic layer deposition (PEALD) process for gallium oxide (Ga2O3) thin films using hexakis(dimethylamido)digallium [Ga(NMe2)3]2 with oxygen (O2) plasma on Si(100). The use of O2 plasma was found to have a significant improvement on the growth rate and deposition temperature when compared to former Ga2O3 processes. The process yielded the second highest growth rates (1.5 Å per cycle) in terms of Ga2O3 ALD and the lowest temperature to date for the ALD growth of Ga2O3 and typical ALD characteristics were determined. From in situ quartz crystal microbalance (QCM) studies and ex situ ellipsometry measurements, it was deduced that the process is initially substrate-inhibited. Complementary analytical techniques were employed to investigate the crystallinity (grazing-incidence X-ray diffraction), composition (Rutherford backscattering analysis/nuclear reaction analysis/X-ray photoelectron spectroscopy), morphology (X-ray reflectivity/atomic force microscopy) which revealed the formation of amorphous, homogeneous and nearly stoichiometric Ga2O3 thin films of high purity (carbon and nitrogen <2 at.%) under optimised process conditions. Tauc plots obtained via UV-Vis spectroscopy yielded a band gap of 4.9 eV and the transmittance values were more than 80%. Upon annealing at 1000 °C, the transformation to oxygen rich polycrystalline ß-gallium oxide took place, which also resulted in the densification and roughening of the layer, accompanied by a slight reduction in the band gap. This work outlines a fast and efficient method for the low temperature ALD growth of Ga2O3 thin films and provides the means to deposit Ga2O3 upon thermally sensitive polymers like polyethylene terephthalate.

Synthesis and evaluation of new copper ketoiminate precursors for a facile and additive-free solution-based approach to nanoscale copper oxide thin films.

Novel copper ketoiminate compounds were synthesized and for the first time applied for additive-free solution-based deposition of nanoscale copper oxide thin films. The two closely related compounds, namely the bis[4-(2-ethoxyethyl-imino)-3-pentanonato]copper, [Cu(EEKI)2], and bis[4-(3-methoxypropylimino)-3-pentanonato]copper, [Cu(MPKI)2], were characterized by means of elemental and thermogravimetric analysis (TGA), as well as electron impact mass spectrometry (EI-MS). The advantages of these compounds are that they are liquid and possess excellent solubility in common organic solvents in addition to an optimum reactivity towards ambient moisture that enables a facile solution-based approach to nanoscale copper oxide thin films. Moreover, no additives or aging is needed to stabilize the solution processing of the copper oxide layers. [Cu(MPKI)2] was tested in detail for the deposition of copper oxide thin films by spin coating. Upon one-step annealing, high-quality, uniform, crystalline copper oxide thin films were deposited on Si, SiO2, as well as on quartz substrates. Structural, morphological and compositional characteristics of the copper oxide nanostructures were investigated in detail by means of X-ray diffraction (XRD), scanning electron microscopy (SEM), Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), and a combined analysis using Rutherford backscattering spectroscopy (RBS) and nuclear reaction analysis (NRA). It was possible to control the copper oxide phases (CuO and Cu2O) by systematic tuning of the post-deposition annealing conditions. The functional properties in terms of optical band gap were investigated using UV/Vis spectroscopy, while the transport properties, such as resistivity, mobility and carrier concentration were analyzed employing Hall measurements, which confirmed the p-type conductivity of the copper oxide layers.

Combinatorial electrochemistry on Al-Fe alloys.

Combinatorial material development was combined with high throughput microelectrochemistry to allow an efficient but comprehensive investigation of the interface chemistry of Al rich Al-Fe alloys as a function of their chemical composition. Composition spread thin films with a linear composition gradient were produced by thermal codeposition. A scanning droplet cell was used to determine the open circuit potential and to perform successive anodic oxide formation with intermittent impedance spectroscopy. The film formation factor, the relative permittivity of the oxides and the onset potential of oxide formation were determined quantitatively as function of the composition with a resolution of 0.5 at.%. An unexpected synergistic effect is found in a very narrow composition range between 9 and 12 at.% Fe. This effect, which shifts the onset potential by nearly 1 V, is discussed in terms of a local accumulation of Fe resulting in a redox stabilisation of space charge layer formation during high-field oxide growth. The results are supported by composition and depth dependent XPS measurements.

Setup of a scanning near field infrared microscope (SNIM): imaging of sub-surface nano-structures in gallium-doped silicon.

We have realized a scanning near-field infrared microscope in the 3-4 microm wavelength range. As a light source, a tunable high power continuous wave infrared optical parametric oscillator with an output power of up to 2.9 W in the 3-4 microm range has been set up. Using scanning near field infrared microscopy (SNIM) imaging we have been able to obtain a lateral resolution of < or =30 nm at a wavelength of 3.2 microm, which is far below the far-field resolution limit of lambda/2. Using this "chemical nanoscope" we could image a sub-surface structure of implanted gallium ions in a topographically flat silicon wafer giving evidence for a near-field contrast. The observed contrast is explained in terms of the effective infrared reflection as a function of the sub-surface gallium doping concentration. The future use of the setup for nm imaging in the chemically important OH, N-H and C-H stretching vibration is discussed.