Orbital Fulde-Ferrell-Larkin-Ovchinnikov state in an Ising superconductor.

In superconductors possessing both time and inversion symmetries, the Zeeman effect of an external magnetic field can break the time-reversal symmetry, forming a conventional Fulde-Ferrell-Larkin-Ovchinnikov (FFLO) state characterized by Cooper pairings with finite momentum1,2. In superconductors lacking (local) inversion symmetry, the Zeeman effect may still act as the underlying mechanism of FFLO states by interacting with spin-orbit coupling (SOC). Specifically, the interplay between the Zeeman effect and Rashba SOC can lead to the formation of more accessible Rashba FFLO states that cover broader regions in the phase diagram3-5. However, when the Zeeman effect is suppressed because of spin locking in the presence of Ising-type SOC, the conventional FFLO scenarios are no longer effective. Instead, an unconventional FFLO state is formed by coupling the orbital effect of magnetic fields with SOC, providing an alternative mechanism in superconductors with broken inversion symmetries6-8. Here we report the discovery of such an orbital FFLO state in the multilayer Ising superconductor 2H-NbSe2. Transport measurements show that the translational and rotational symmetries are broken in the orbital FFLO state, providing the hallmark signatures of finite-momentum Cooper pairings. We establish the entire orbital FFLO phase diagram, consisting of a normal metal, a uniform Ising superconducting phase and a six-fold orbital FFLO state. This study highlights an alternative route to achieving finite-momentum superconductivity and provides a universal mechanism to preparing orbital FFLO states in similar materials with broken inversion symmetries.

Phonon-mediated room-temperature quantum Hall transport in graphene.

The quantum Hall (QH) effect in two-dimensional electron systems (2DESs) is conventionally observed at liquid-helium temperatures, where lattice vibrations are strongly suppressed and bulk carrier scattering is dominated by disorder. However, due to large Landau level (LL) separation (~2000 K at B = 30 T), graphene can support the QH effect up to room temperature (RT), concomitant with a non-negligible population of acoustic phonons with a wave-vector commensurate to the inverse electronic magnetic length. Here, we demonstrate that graphene encapsulated in hexagonal boron nitride (hBN) realizes a novel transport regime, where dissipation in the QH phase is governed predominantly by electron-phonon scattering. Investigating thermally-activated transport at filling factor 2 up to RT in an ensemble of back-gated devices, we show that the high B-field behaviour correlates with their zero B-field transport mobility. By this means, we extend the well-accepted notion of phonon-limited resistivity in ultra-clean graphene to a hitherto unexplored high-field realm.

Anomalous vortex liquid in charge-ordered cuprate superconductors.

The interplay between charge order and d-wave superconductivity in high-[Formula: see text] cuprates remains an open question. While mounting evidence from spectroscopic probes indicates that charge order competes with superconductivity, to date little is known about the impact of charge order on charge transport in the mixed state, when vortices are present. Here we study the low-temperature electrical resistivity of three distinctly different cuprate families under intense magnetic fields, over a broad range of hole doping and current excitations. We find that the electronic transport in the doping regime where long-range charge order is known to be present is characterized by a nonohmic resistivity, the identifying feature of an anomalous vortex liquid. The field and temperature range in which this nonohmic behavior occurs indicates that the presence of long-range charge order is closely related to the emergence of this anomalous vortex liquid, near a vortex solid boundary that is defined by the excitation current in the [Formula: see text] 0 limit. Our findings further suggest that this anomalous vortex liquid, a manifestation of fragile superconductivity with a suppressed critical current density, is ubiquitous in the high-field state of charge-ordered cuprates.

Tuning the Structural and Optoelectronic Properties of Cs2 AgBiBr6 Double-Perovskite Single Crystals through Alkali-Metal Substitution.

Lead-free double perovskites have great potential as stable and nontoxic optoelectronic materials. Recently, Cs2 AgBiBr6 has emerged as a promising material, with suboptimal photon-to-charge carrier conversion efficiency, yet well suited for high-energy photon-detection applications. Here, the optoelectronic and structural properties of pure Cs2 AgBiBr6 and alkali-metal-substituted (Cs1- x Yx )2 AgBiBr6 (Y: Rb+ , K+ , Na+ ; x = 0.02) single crystals are investigated. Strikingly, alkali-substitution entails a tunability to the material system in its response to X-rays and structural properties that is most strongly revealed in Rb-substituted compounds whose X-ray sensitivity outperforms other double-perovskite-based devices reported. While the fundamental nature and magnitude of the bandgap remains unchanged, the alkali-substituted materials exhibit a threefold boost in their fundamental carrier recombination lifetime at room temperature. Moreover, an enhanced electron-acoustic phonon scattering is found compared to Cs2 AgBiBr6 . The study thus paves the way for employing cation substitution to tune the properties of double perovskites toward a new material platform for optoelectronics.

Tracking Structural Phase Transitions in Lead-Halide Perovskites by Means of Thermal Expansion.

The extraordinary properties of lead-halide perovskite materials have spurred intense research, as they have a realistic perspective to play an important role in future photovoltaic devices. It is known that these materials undergo a number of structural phase transitions as a function of temperature that markedly alter their optical and electronic properties. The precise phase transition temperature and exact crystal structure in each phase, however, are controversially discussed in the literature. The linear thermal expansion of single crystals of APbX3 (A = methylammonium (MA), formamidinium (FA); X = I, Br) below room temperature is measured using a high-resolution capacitive dilatometer to determine the phase transition temperatures. For δ-FAPbI3 , two wide regions of negative thermal expansion below 173 and 54 K, and a cascade of sharp transitions for FAPbBr3 that have not previously been reported are uncovered. Their respective crystal phases are identified via powder X-ray diffraction. Moreover, it is demonstrated that transport under steady-state illumination is considerably altered at the structural phase transition in the MA compounds. The results provide advanced insights into the evolution of the crystal structure with decreasing temperature that are essential to interpret the growing interest in investigating the electronic, optical, and photonic properties of lead-halide perovskite materials.

Observation of an Odd-Integer Quantum Hall Effect from Topological Surface States in Cd_{3}As_{2}.

The quantum Hall effect (QHE) in a 3D Dirac semimetal thin film is attributed to either the quantum confinement induced bulk subbands or the Weyl orbits that connect the opposite surfaces via bulk Weyl nodes. However, it is still unknown whether the QHE based on the Weyl orbit can survive as the bulk Weyl nodes are gapped. Moreover, there are closed Fermi loops rather than open Fermi arcs on the Dirac semimetal surface, which can also host the QHE. Here we report the QHE in the 3D Dirac semimetal Cd_{3}As_{2} nanoplate by tuning the gate voltage under a fixed 30 T magnetic field. The quantized Hall plateaus at odd filling factors are observed as a magnetic field along the [001] crystal direction, indicating a Berry's phase π from the topological surface states. Furthermore, even filling factors are observed when the magnetic field is along the [112] direction, indicating the C_{4} rotational symmetry breaking and a topological phase transition. The results shed light on the understanding of QHE in 3D Cd_{3}As_{2}.

High-temperature quantum oscillations of the Hall resistance in bulk Bi2Se3.

Helically spin-polarized Dirac fermions (HSDF) in protected topological surface states (TSS) are of high interest as a new state of quantum matter. In three-dimensional (3D) materials with TSS, electronic bulk states often mask the transport properties of HSDF. Recently, the high-field Hall resistance and low-field magnetoresistance indicate that the TSS may coexist with a layered two-dimensional electronic system (2DES). Here, we demonstrate quantum oscillations of the Hall resistance at temperatures up to 50 K in nominally undoped bulk Bi2Se3 with a high electron density n of about 2·1019 cm-3. From the angular and temperature dependence of the Hall resistance and the Shubnikov-de Haas oscillations we identify 3D and 2D contributions to transport. Angular resolved photoemission spectroscopy proves the existence of TSS. We present a model for Bi2Se3 and suggest that the coexistence of TSS and 2D layered transport stabilizes the quantum oscillations of the Hall resistance.

Electron-hole asymmetry of the topological surface states in strained HgTe.

Topological insulators are a new class of materials with an insulating bulk and topologically protected metallic surface states. Although it is widely assumed that these surface states display a Dirac-type dispersion that is symmetric above and below the Dirac point, this exact equivalence across the Fermi level has yet to be established experimentally. Here, we present a detailed transport study of the 3D topological insulator-strained HgTe that strongly challenges this prevailing viewpoint. First, we establish the existence of exclusively surface-dominated transport via the observation of an ambipolar surface quantum Hall effect and quantum oscillations in the Seebeck and Nernst effect. Second, we show that, whereas the thermopower is diffusion driven for surface electrons, both diffusion and phonon drag contributions are essential for the hole surface carriers. This distinct behavior in the thermoelectric response is explained by a strong deviation from the linear dispersion relation for the surface states, with a much flatter dispersion for holes compared with electrons. These findings show that the metallic surface states in topological insulators can exhibit both strong electron-hole asymmetry and a strong deviation from a linear dispersion but remain topologically protected.

Access to Multiblock Copolymers via Supramolecular Host-Guest Chemistry and Photochemical Ligation.

We combine supramolecular host-guest interactions of ß-cyclodextrin (CD) with light-induced Diels-Alder reactions of 2-methoxy-6-methylbenzaldehyde (photoenol, PE) for the formation of multiblock copolymers. Via the synthesis of a new bifunctional chain transfer agent (CTA) and subsequent reversible addition-fragmentation chain transfer (RAFT) polymerization, we introduce a supramolecular recognition unit (tert-butyl phenyl) and a photoactive unit (photoenol) to a polymer chain in order to obtain an α,ω-functionalized polymeric center block, having orthogonal recognition units at each chain end. Multiblock copolymers are formed via the light-induced reaction of the photoenol with a maleimide-functionalized polymer chain and the supramolecular self-assembly of the tert-butyl phenyl group with the ß-CD end group of a third polymer chain. By employing the fast and efficient photoinduced Diels-Alder reaction in combination with supramolecular host-guest interactions, a novel method for macromolecular modular ligation is introduced.

Quantum spin hall insulator state in HgTe quantum wells.

Recent theory predicted that the quantum spin Hall effect, a fundamentally new quantum state of matter that exists at zero external magnetic field, may be realized in HgTe/(Hg,Cd)Te quantum wells. We fabricated such sample structures with low density and high mobility in which we could tune, through an external gate voltage, the carrier conduction from n-type to p-type, passing through an insulating regime. For thin quantum wells with well width d < 6.3 nanometers, the insulating regime showed the conventional behavior of vanishingly small conductance at low temperature. However, for thicker quantum wells (d > 6.3 nanometers), the nominally insulating regime showed a plateau of residual conductance close to 2e(2)/h, where e is the electron charge and h is Planck's constant. The residual conductance was independent of the sample width, indicating that it is caused by edge states. Furthermore, the residual conductance was destroyed by a small external magnetic field. The quantum phase transition at the critical thickness, d = 6.3 nanometers, was also independently determined from the magnetic field-induced insulator-to-metal transition. These observations provide experimental evidence of the quantum spin Hall effect.