Cluster Superlattice Membranes.

Cluster superlattice membranes consist of a two-dimensional hexagonal lattice of similar-sized nanoclusters sandwiched between single-crystal graphene and an amorphous carbon matrix. The fabrication process involves three main steps, the templated self-organization of a metal cluster superlattice on epitaxial graphene on Ir(111), conformal embedding in an amorphous carbon matrix, and subsequent lift-off from the Ir(111) substrate. The mechanical stability provided by the carbon-graphene matrix makes the membrane stable as a free-standing material and enables transfer to other substrates. The fabrication procedure can be applied to a wide variety of cluster materials and cluster sizes from the single-atom limit to clusters of a few hundred atoms, as well as other two-dimensional layer/host matrix combinations. The versatility of the membrane composition, its mechanical stability, and the simplicity of the transfer procedure make cluster superlattice membranes a promising material in catalysis, magnetism, energy conversion, and optoelectronics.

Conformal Embedding of Cluster Superlattices with Carbon.

Iridium cluster superlattices on the graphene moiré with Ir(111) are embedded with elemental carbon through vapor-phase deposition. Using scanning tunneling microscopy and spectroscopy, we find that carbon embedding is conformal and does not deteriorate the excellent order of the iridium clusters. The thermal and mechanical stability of the embedded clusters is greatly enhanced. Smoluchowski ripening as well as cluster pick-up by the scanning tunneling microscopy tip are both suppressed. The only cluster decay path left takes place at an elevated temperature of around 1050 K. The cluster material penetrates through the graphene sheet, whereby it becomes bound to the underlying metal. It is argued that conformal carbon embedding is an important step towards the formation of a new type of sintering-resistant cluster lattice material for nanocatalysis and nanomagnetism.

A Monolayer of Hexagonal Boron Nitride on Ir(111) as a Template for Cluster Superlattices.

The moiré of a monolayer of hexagonal boron nitride on Ir(111) is found to be a template for Ir, C, and Au cluster superlattices. Using scanning tunneling microscopy, the cluster structure and epitaxial relation to the substrate, the cluster binding site, the role of defects, as well as the thermal stability of the cluster lattice are investigated. The Ir and C cluster superlattices display a high thermal stability, before they decay by intercalation and Smoluchowski ripening. Ab initio calculations explain the extraordinarily strong Ir cluster binding through selective sp3 rehybridization of boron nitride involving B-Ir cluster bonds and a strengthening of the nitrogen bonds to the Ir substrate in a specific, initially only chemisorbed valley area within the moiré.

Structure and Growth of Hexagonal Boron Nitride on Ir(111).

Using the X-ray standing wave method, scanning tunneling microscopy, low energy electron diffraction, and density functional theory, we precisely determine the lateral and vertical structure of hexagonal boron nitride on Ir(111). The moiré superstructure leads to a periodic arrangement of strongly chemisorbed valleys in an otherwise rather flat, weakly physisorbed plane. The best commensurate approximation of the moiré unit cell is (12 × 12) boron nitride cells resting on (11 × 11) substrate cells, which is at variance with several earlier studies. We uncover the existence of two fundamentally different mechanisms of layer formation for hexagonal boron nitride, namely, nucleation and growth as opposed to network formation without nucleation. The different pathways are linked to different distributions of rotational domains, and the latter enables selection of a single orientation only.

Silicide induced ion beam patterning of Si(001).

Low energy ion beam pattern formation on Si with simultaneous co-deposition of Ag, Pd, Pb, Ir, Fe or C impurities was investigated by in situ scanning tunneling microscopy as well as ex situ atomic force microscopy, scanning electron microscopy, transmission electron microscopy and Rutherford backscattering spectrometry. The impurities were supplied by sputter deposition. Additional insight into the mechanism of pattern formation was obtained by more controlled supply through e-beam evaporation. For the situations investigated, the ability of the impurity to react with Si, i.e. to form a silicide, appears to be a necessary, but not a sufficient condition for pattern formation. Comparing the effects of impurities with similar mass and nuclear charge, the collision kinetics is shown to be not of primary importance for pattern formation. To understand the observed phenomena, it is necessary to assume a bi-directional coupling of composition and height fluctuations. This coupling gives rise to a sensitive dependence of the final morphology on the conditions of impurity supply. Because of this history dependence, the final morphology cannot be uniquely characterized by a steady state impurity concentration.