ABSTRACT
ZnO thin films with a high piezoelectric coupling coefficient are widely used for high frequency and low loss surface acoustic wave (SAW) devices when the film is deposited on top of a high acoustic velocity substrate, such as diamond or sapphire. The performance of these devices is critically dependent on the quality of the ZnO films as well as of the interface between ZnO and the substrate. In this paper, we report the studies on piezoelectric properties of epitaxial (1120) ZnO thin films grown on R-plane sapphire substrates using metal organic chemical vapor deposition (MOCVD) technique. The c-axis of the ZnO film is in-plane. The ZnO/R-Al2O3 interface is atomically sharp. SAW delay lines, aligned parallel to the c-axis, were used to characterize the surface wave velocity, coupling coefficient, and temperature coefficient of frequency as functions of film thickness to wavelength ratio (h/lambda). The acoustic wave properties of the material system were calculated using Adler's matrix method, and the devices were simulated using the quasi-static approximation based on Green's function analysis.
