A silicon metal-oxide-semiconductor electron spin-orbit qubit.

The silicon metal-oxide-semiconductor (MOS) material system is a technologically important implementation of spin-based quantum information processing. However, the MOS interface is imperfect leading to concerns about 1/f trap noise and variability in the electron g-factor due to spin-orbit (SO) effects. Here we advantageously use interface-SO coupling for a critical control axis in a double-quantum-dot singlet-triplet qubit. The magnetic field-orientation dependence of the g-factors is consistent with Rashba and Dresselhaus interface-SO contributions. The resulting all-electrical, two-axis control is also used to probe the MOS interface noise. The measured inhomogeneous dephasing time, [Formula: see text], of 1.6 µs is consistent with 99.95% 28Si enrichment. Furthermore, when tuned to be sensitive to exchange fluctuations, a quasi-static charge noise detuning variance of 2 µeV is observed, competitive with low-noise reports in other semiconductor qubits. This work, therefore, demonstrates that the MOS interface inherently provides properties for two-axis qubit control, while not increasing noise relative to other material choices.

Quantum control of hybrid nuclear-electronic qubits.

Pulsed magnetic resonance allows the quantum state of electronic and nuclear spins to be controlled on the timescale of nanoseconds and microseconds respectively. The time required to flip dilute spins is orders of magnitude shorter than their coherence times, leading to several schemes for quantum information processing with spin qubits. Instead, we investigate 'hybrid nuclear-electronic' qubits consisting of near 50:50 superpositions of the electronic and nuclear spin states. Using bismuth-doped silicon, we demonstrate quantum control over these states in 32 ns, which is orders of magnitude faster than previous experiments using pure nuclear states. The coherence times of up to 4 ms are five orders of magnitude longer than the manipulation times, and are limited only by naturally occurring (29)Si nuclear spin impurities. We find a quantitative agreement between our experiments and an analytical theory for the resonance positions, as well as their relative intensities and Rabi oscillation frequencies. These results bring spins in a solid material a step closer to research on ion-trap qubits.

Electron spin coherence and electron nuclear double resonance of Bi donors in natural Si.

Donors in silicon hold considerable promise for emerging quantum technologies, due to their uniquely long electron spin coherence times. Bismuth donors in silicon differ from more widely studied group V donors, such as phosphorous, in several significant respects: They have the strongest binding energy (70.98 meV), a large nuclear spin (I=9/2), and a strong hyperfine coupling constant (A=1475.4 MHz). These larger energy scales allow us to perform a detailed test of theoretical models describing the spectral diffusion mechanism that is known to govern the electron spin decoherence of P donors in natural silicon. We report the electron-nuclear double resonance spectra of the Bi donor, across the range 200 MHz to 1.4 GHz, and confirm that coherence transfer is possible between electron and nuclear spin degrees of freedom at these higher frequencies.

Quantum simulation of multiple-exciton generation in a nanocrystal by a single photon.

We have shown theoretically that efficient multiple-exciton generation (MEG) by a single photon can be observed in small nanocrystals. Our quantum simulations that include hundreds of thousands of exciton and multiexciton states demonstrate that the complex time-dependent dynamics of these states in a closed electronic system yields a saturated MEG effect on a picosecond time scale. Including phonon relaxation confirms that efficient MEG requires the exciton-biexciton coupling time to be faster than exciton relaxation time.

Electron spin decoherence in isotope-enriched silicon.

Silicon is promising for spin-based quantum computation because nuclear spins, a source of magnetic noise, may be eliminated through isotopic enrichment. Long spin decoherence times T2 have been measured in isotope-enriched silicon but come far short of the T2=2T1 limit. The effect of nuclear spins on T2 is well established. However, the effect of background electron spins from ever present residual phosphorus impurities in silicon can also produce significant decoherence. We study spin decoherence decay as a function of donor concentration, 29Si concentration, and temperature using cluster expansion techniques specifically adapted to the problem of a sparse dipolarly coupled electron spin bath. Our results agree with the existing experimental spin echo data in Si:P and establish the importance of background dopants as the ultimate decoherence mechanism in isotope-enriched silicon.

Electron spin dephasing due to hyperfine interactions with a nuclear spin bath.

We investigate pure dephasing decoherence (free induction decay and spin echo) of a spin qubit interacting with a nuclear spin bath. While for infinite magnetic field B the only decoherence mechanism is spectral diffusion due to dipolar flip-flops of nuclear spins, with decreasing B the hyperfine-mediated interactions between the nuclear spins become important. We give a theory of decoherence due to these interactions which takes advantage of their long-range nature. For a thermal uncorrelated bath we show that our theory is applicable down to B approximately 10 mT, allowing for comparison with recent experiments in GaAs quantum dots.