ABSTRACT
Both interlayer-undoped and interlayer-doped multilayer graphenes were prepared by the multiple transfers of graphene layers with multiple Cu etching (either dopant-free or doped during etching) and transfer, and the effect of interface properties on the electrical properties of multilayer graphene was investigated by varying the number of layers from 1 to 12. In both the cases, the sheet resistance decreased with increasing number of layers from 700 to 104 Ω/sq for the interlayer-undoped graphene and from 280 to 25 Ω/sq for the interlayer-doped graphene. Further, Hall measurements revealed that the origins of the sheet resistance reduction in the two cases are different. In the interlayer-undoped graphene, the sheet resistance decreased because of the increase in mobility with the addition of inner layers, which has a low carrier density and a high carrier mobility. On the other hand, it decreased because of the increase in sheet carrier density in the interlayer-doped multilayer graphene. The mobility and carrier density variations in both the cases were confirmed by fitting with the model of Hall effect in the heterojunction. In addition, we found that surface property modification by the doping of the top layer and the formation of double-layer graphene with different partial coverages allow the separate control of carrier density and mobility. Our study provides an effective approach for controlling the properties of multilayer graphene for electronic applications.
ABSTRACT
The practical use of graphene in consumer electronics has not been demonstrated since the size, uniformity, and reliability problems are yet to be solved to satisfy industrial standards. Here we report mass-produced graphene films synthesized by hydrogen-free rapid thermal chemical vapor deposition (RT-CVD), roll-to-roll etching, and transfer methods, which enabled faster and larger production of homogeneous graphene films over 400 × 300 mm(2) area with a sheet resistance of 249 ± 17 Ω/sq without additional doping. The properties of RT-CVD graphene have been carefully characterized by high-resolution transmission electron microscopy, Raman spectroscopy, chemical grain boundary analysis, and various electrical device measurements, showing excellent uniformity and stability. In particular, we found no significant correlation between graphene domain sizes and electrical conductivity, unlike previous theoretical expectations for nanoscale graphene domains. Finally, the actual application of the RT-CVD films to capacitive multitouch devices installed in the most sophisticated mobile phone was demonstrated.
