Study of the dispersion and electrical properties of carbon nanotubes treated by surfactants in dimethylacetamide.

In this study, the effects of sodium dodecyl benzene sulfonate, polyvinylpyrrolidone, sodium dodecyl benzene sulfonate/polyvinylpyrrolidone, and Triton X-100 on the dispersion of 0.1 wt% carbon nanotubes in dimethylacetamide are reported. Sedimentation results show that except for sodium dodecyl benzene sulfonate, all the surfactant-assisted carbon nanotube solutions have visually-stable dispersions for at least two months, and even the samples without a surfactant gave no obvious deposition. UV-Vis spectra of the dispersions with and without acid-treatment proved that the carboxyl group attached to the carbon nanotubes positively improves the dispersion effect. The states of aggregation of carbon nanotubes treated by different surfactants are distinctive, and the electrical properties of carbon nanotubes are strongly related to these states of aggregation. The best dispersing and stabilizing effect was found in the sodium dodecyl benzene sulfonate/polyvinylpyrrolidone sample, which also gave the lowest resistance (2.15 x 10(4) omega at 20 V) among all the surfactant-treated stable suspensions.

Synthesis and synchrotron light-induced luminescence of ZnO nanostructures: nanowires, nanoneedles, nanoflowers, and tubular whiskers.

ZnO nanostructures, including single-crystal nanowires, nanoneedles, nanoflowers, and tubular whiskers, have been fabricated at a modestly low temperature of 550 degrees C via the oxidation of metallic Zn powder without a metal catalyst. Specific ZnO nanostructures can be obtained at a specific temperature zone in the furnace depending on the temperature and the pressure of oxygen. Scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM), and X-ray diffraction (XRD) studies show that ZnO nanostructures thus prepared are single crystals with a wurtzite structure. X-ray excited optical luminescence (XEOL) from the ZnO nanostructures show noticeable morphology-dependent luminescence. Specifically, ZnO nanowires of around 15 nm in diameter emit the strongest green light. The morphology of these nanostructures, their XEOL, and the implication of the results will be discussed.

Silicon-silica nanowires, nanotubes, and biaxial nanowires: inside, outside, and side-by-side growth of silicon versus silica on zeolite.

It was demonstrated that zeolite can be used as a pseudo-template to grow very fine and uniform silicon nanostructures via disproportionation reaction of SiO by thermal evaporation. Three distinct types of composite nanowires and nanotubes of silicon and silica were grown on the surfaces of zeolite Y pellets. The first type is formed by an ultrafine crystalline silicon nanowire sheathed by an amorphous silica tube (a silicon nanowire inside a silica nanotube). The second type is formed by a crystalline silicon nanotube filled with amorphous silica (a silicon nanotube outside a silica nanowire). The third type is a biaxial silicon-silica nanowire structure with side-by-side growth of crystalline silicon and amorphous silica. These silicon nanostructures exhibit unusually intense photoluminescence (in comparison to ordinary silicon nanowires).

FTIR spectroscopic studies of the stabilities and reactivities of hydrogen-terminated surfaces of silicon nanowires.

Attenuated total reflection Fourier transform infrared (FTIR) spectroscopy was used to characterize the surface species on oxide-free silicon nanowires (SiNWs) after etching with aqueous HF solution. The HF-etched SiNW surfaces were found to be hydrogen-terminated; in particular, three types of silicon hydride species, the monohydride (SiH), the dihydride (SiH(2)), and the trihydride (SiH(3)), had been observed. The thermal stability of the hydrogen-passivated surfaces of SiNWs was investigated by measuring the FTIR spectra after annealing at different elevated temperatures. It was found that hydrogen desorption of the trihydrides occurred at approximately 550 K, and that of the dihydrides occurred at approximately 650 K. At or above 750 K, all silicon hydride species began to desorb from the surfaces of the SiNWs. At around 850 K, the SiNW surfaces were free of silicon hydride species. The stabilities and reactivities of HF-etched SiNWs in air and water were also studied. The hydrogen-passivated surfaces of SiNWs showed good stability in air (under ambient conditions) but relatively poor stability in water. The stabilities and reactivities of the SiNWs are also compared with those of silicon wafers.

Reductive growth of nanosized ligated metal clusters on silicon nanowires.

The reductive growth of metal clusters on silicon nanowires (SiNWs) is reported. The HF-etched SiNWs were found to reduce ligated Au-Ag clusters of single size, shape, composition, and structure. In the process, the surfaces of the SiNWs were reoxidized. The reductive cluster growth on the SiNW surface was followed by high-resolution transmission electron microscopy (HRTEM). The reduced metal clusters grew to different sizes in the nanometer regime (1-7 nm in diameter) on the SiNW surfaces. At sizes greater than approximately 7 nm, they tend to separate from the SiNW surfaces. Further growth and/or agglomeration of these colloidal particles to sizes greater than roughly 25 nm in diameter eventually causes the particles to precipitate from solution. Two interesting phenomena, the "sinking cluster" and the "cluster fusion" processes, were observed under TEM.

Viscosity of dental waxes by use of Stokes' law.

The rheological properties of dental waxes control their fabrication procedures and are dominated by their temperature dependence. Indeed, it is their rapid change in deformability with temperature which enables them to be used. Some measure of flow rate is therefore needed for characterization and quality control. A modified Stokes' method is proposed which allows measurement of an analogue of Newtonian viscosity and is suited to routine use in the range 10(4)-10(10) Pa.s, and which leads naturally to a determination of the activation energy for the process. This activation energy is of the order of 700 kJ/mole at low stress.