Probing Inherent Optical Anisotropy in Substrates via Direct Nanoimaging of Mie Scattering.

In this study, we investigated the optical properties of a transition metal dichalcogenide (TMD) substrate via Mie-scattering-induced surface analysis (MISA). Employing near-field optical microscopy and finite-difference time-domain (FDTD) simulations, we systemically prove and directly visualize the Mie scattering of superspherical gold nanoparticles (s-AuNPs) at the nanoscale. Molybdenum disulfide substrates exhibited optical isotropy, while rhenium disulfide (ReS2) substrates showed anisotropic behavior attributed to the interaction with incident light's electric field. Our study revealed substantial anisotropic trends in Mie scattering, particularly in the near-infrared energy range, with ReS2 exhibiting more pronounced spectral and angular responses in satellite peaks. Our results emphasize the application of Mie scattering, exploring the optical properties of substrates and contributing to a deeper understanding of nanoscale light-matter interactions.

Degradation phenomena of quantum dot light-emitting diodes induced by high electric field.

Quantum dots possess exceptional optoelectronic properties, such as narrow bandwidth, controllable wavelength, and compatibility with solution-based processing. However, for efficient and stable operation in electroluminescence mode, several issues require resolution. Particularly, as device dimensions decrease, a higher electric field may be applied through next-generation quantum dot light-emitting diode (QLED) devices, which could further degrade the device. In this study, we conduct a systematic analysis of the degradation phenomena of a QLED device induced by a high electric field, using scanning probe microscopy (SPM) and transmission electron microscopy (TEM). We apply a local high electric field to the surface of a QLED device using an atomic force microscopy (AFM) tip, and we investigate changes in morphology and work function in the Kelvin probe force microscopy mode. After the SPM experiments, we perform TEM measurements on the same degraded sample area affected by the electric field of the AFM tip. The results indicate that a QLED device could be mechanically degraded by a high electric field, and work function changes significantly in degraded areas. In addition, the TEM measurements reveal that In ions migrate from the indium tin oxide (ITO) bottom electrode to the top of the QLED device. The ITO bottom electrode also deforms significantly, which could induce work function variation. The systematic approach adopted in this study can provide a suitable methodology for investigating the degradation phenomena of various optoelectronic devices.

Single-Crystalline Pyramidal TiCx Particles Grown by Biphase Diffusion Synthesis.

In this study, we present single-crystalline pyramid-shaped (SP) TiCx particles synthesized on a stacked melt (copper)-solid (titanium) substrate using a biphase diffusion synthesis (BDS) method, in which different sizes ranging from nano- to micrometer scale were obtained within the copper melt with the {100} planes exposed to air. Direct observation and further plasma treatment of the pyramids at different self-assembly stages facilitated the investigation of their growth mode, especially in the horizontal plane. The dendritic growth mode along with the edge and corner-shared modes of the SP TiCx particles frozen on the copper surface was investigated. With SP TiCx particles stacked on top, MoS2-based phototransistors exhibited an up to 6-fold photocurrent increase under laser illumination at different wavelengths, which was attributed to the localized surface plasmonic resonance (LSPR) effect. The BDS method is applied for the synthesis of SP TiCx particles, with a detailed investigation of the relevant growth mode and related applications, such as decoration for high-performance photodevices.

Color-Selective Schottky Barrier Modulation for Optoelectric Logic.

The limitation on signal processes implementable using conventional semiconductor circuits based on electric signals necessitates a revolutionary change in device structures such that they can exploit photons or light. Herein, we introduce optoelectric logic circuits that convert optical signals with different wavelengths corresponding to different colors into binary electric signals. Such circuits are assembled using unit devices in which the electric current through the semiconductor channel is effectively gated by lights of different colors. Color-selective optical modulation of the device is cleverly achieved using graphene decorated with different organic dyes as the electrode of a Schottky diode structure. The drastic change in the electrode work function under illumination induces a change in the height of the Schottky barrier formed at the electrode/semiconductor junction and consequent modulation of the electric current; we term the developed device a photonic barristor. We construct logic circuits using an array of photonic barristors and demonstrate that they execute the functions of conventional NAND and NOR gates from optical input signals.

Vertically Stacked CVD-Grown 2D Heterostructure for Wafer-Scale Electronics.

This paper demonstrates, for the first time, wafer-scale graphene/MoS2 heterostructures prepared by chemical vapor deposition (CVD) and their application in vertical transistors and logic gates. A CVD-grown bulk MoS2 layer is utilized as the vertical channel, whereas CVD-grown monolayer graphene is used as the tunable work-function electrode. The short vertical channel of the transistor is formed by sandwiching bulk MoS2 between the bottom indium tin oxide (ITO, drain electrode) and the top graphene (source electrode). The electron injection barriers at the graphene-MoS2 junction and ITO-MoS2 junction are modulated effectively through variation of the Schottky barrier height and its effective barrier width, respectively, because of the work-function tunability of the graphene electrode. The resulting vertical transistor with the CVD-grown MoS2/graphene heterostructure exhibits a current density exceeding 7 A/cm2, a subthreshold swing of 410 mV/dec, and an on-off current ratio exceeding 103. The large-area synthesis, transfer, and patterning processes of both semiconducting MoS2 and metallic graphene facilitate construction of a wafer-scale array of transistors and logic gates such as NOT, NAND, and NOR.

Remote Gating of Schottky Barrier for Transistors and Their Vertical Integration.

This paper introduces a strategy to modulate a Schottky barrier formed at a graphene-semiconductor heterojunction. The modulation is performed by controlling the work function of graphene from a gate that is placed laterally away from the graphene-semiconductor junction, which we refer to as the remote gating of a Schottky barrier. The remote gating relies on the sensitive work function of graphene, whose local variation induced by locally applied field effect affects the change in the work function of the entire material. Using Kelvin probe force microscopy analysis, we directly visualize how this local variation in the work function propagates through graphene. These properties of graphene are exploited to assemble remote-gated vertical Schottky barrier transistors (v-SBTs) in an unconventional device architecture. Furthermore, a vertical complementary circuit is fabricated by simply stacking two remote-gated v-SBTs (pentacene layer as the p-channel and indium gallium zinc oxide layer as the n-channel) vertically. We consider that the remote gating of graphene and the associated device architecture presented herein facilitate the extendibility of graphene-based v-SBTs in the vertical assembly of logic circuits.

Management of transition dipoles in organic hole-transporting materials under solar irradiation for perovskite solar cells.

In organic hole-transporting material (HTM)-based p-i-n planar perovskite solar cells, which have simple and low-temperature processibility feasible to flexible devices, the incident light has to pass through the HTM before reaching the perovskite layer. Therefore, photo-excited state of organic HTM could become important during the solar cell operation, but this feature has not usually been considered for the HTM design. Here, we prove that enhancing their property at their photo-excited states, especially their transition dipole moments, can be a methodology to develop high efficiency p-i-n perovskite solar cells. The organic HTMs are designed to have high transition dipole moments at the excited states and simultaneously to preserve those property during the solar cell operation by their extended lifetimes through the excited-state intramolecular proton transfer process, consequently reducing the charge recombination and improving extraction properties of devices. Their UV-filtering ability is also beneficial to enhance the photostability of devices.

Defect-selective dry etching for quick and easy probing of hexagonal boron nitride domains.

In this study, we demonstrate a new method to selectively etch the point defects or the boundaries of as-grown hexagonal boron nitride (hBN) films and flakes in situ on copper substrates using hydrogen and argon gases. The initial quality of the chemical vapor deposition-grown hBN films and flakes was confirmed by UV-vis absorption spectroscopy, atomic force microscopy, and transmission electron microscopy. Different gas flow ratios of Ar/H2 were then employed to etch the same quality of samples and it was found that etching with hydrogen starts from the point defects and grows epitaxially, which helps in confirming crystalline orientations. However, etching with argon is sensitive to line defects (boundaries) and helps in visualizing the domain size. Finally, based on this defect-selective dry etching technique, it could be visualized that the domains of a polycrystalline hBN monolayer merged together with many parts, even with those that grew from a single nucleation seed.

Photofluidic Near-Field Mapping of Electric-Field Resonance in Plasmonic Metasurface Assembled with Gold Nanoparticles.

We present a near-field mapping of electric fields from the individual superspherical and ultrasmooth gold nanoparticles (AuNPs) and artificially assembled AuNP nanostructures by measuring the reconfiguration of an azobenzene-containing polymer(azo-polymer) film. Various configurations of AuNPs and the azo-polymer were studied with atomic force microscopy measurements and calculations. The interference was systematically studied with AuNP dimers of various gap distances and different embedding depth in the polymer film. Finally, we successfully demonstrated the interference of standing waves in artificially assembled plasmonic metasurface.