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1.
Local transport properties of thin bismuth films studied by scanning tunneling potentiometry.
Briner BG; Feenstra RM; Chin TP; Woodall JM.
Phys Rev B Condens Matter ; 54(8): R5283-R5286, 1996 Aug 15.
Article in English | MEDLINE | ID: mdl-9986589
2.
In situ study of Fermi-level pinning on n- and p-type GaAs (001) grown by molecular-beam epitaxy using photoreflectance.
Yan D; Pollak FH; Chin TP; Woodall JM.
Phys Rev B Condens Matter ; 52(7): 4674-4676, 1995 Aug 15.
Article in English | MEDLINE | ID: mdl-9981631
3.
Observation of bulk defects by scanning tunneling microscopy and spectroscopy: Arsenic antisite defects in GaAs.
Feenstra RM; Woodall JM; Pettit GD.
Phys Rev Lett ; 71(8): 1176-1179, 1993 Aug 23.
Article in English | MEDLINE | ID: mdl-10055469
4.
Geometric ordering, surface chemistry, band bending, and work function at decapped GaAs(100) surfaces.
Vitomirov IM; Raisanen A; Finnefrock AC; Viturro RE; Brillson LJ; Kirchner PD; Pettit GD; Woodall JM.
Phys Rev B Condens Matter ; 46(20): 13293-13302, 1992 Nov 15.
Article in English | MEDLINE | ID: mdl-10003372
5.
Role of excess As in low-temperature-grown GaAs.
Warren AC; Woodall JM; Kirchner PD; Yin X; Pollak F; Melloch MR; Otsuka N; Mahalingam K.
Phys Rev B Condens Matter ; 46(8): 4617-4620, 1992 Aug 15.
Article in English | MEDLINE | ID: mdl-10004217
6.
Chemical and electronic properties of Al/
Chang S; Vitomirov IM; Brillson LJ; Mailhiot C; Rioux DF; Kime YJ; Kirchner PD; Pettit GD; Woodall JM.
Phys Rev B Condens Matter ; 45(23): 13438-13451, 1992 Jun 15.
Article in English | MEDLINE | ID: mdl-10001430
7.
Temperature dependence of the direct band gap of InxGa1-xAs (x=0.06 and 0.15).
Hang Z; Yan D; Pollak FH; Pettit GD; Woodall JM.
Phys Rev B Condens Matter ; 44(19): 10546-10550, 1991 Nov 15.
Article in English | MEDLINE | ID: mdl-9999079
8.
Comment on "Electronic structure of ideal metal/GaAs contacts"
Freeouf JL; Woodall JM; Duke CB.
Phys Rev Lett ; 67(19): 2745, 1991 Nov 04.
Article in English | MEDLINE | ID: mdl-10044506
9.
Externally generated piezoelectric effect in semiconductor micro- structures.
Qiang H; Pollak FH; Mailhiot C; Pettit GD; Woodall JM.
Phys Rev B Condens Matter ; 44(16): 9126-9128, 1991 Oct 15.
Article in English | MEDLINE | ID: mdl-9998890
10.
Correlation of deep-level and chemically-active-site densities at vicinal GaAs(100)-Al interfaces.
Chang S; Vitomirov IM; Brillson LJ; Rioux DF; Kirchner PD; Pettit GD; Woodall JM.
Phys Rev B Condens Matter ; 44(3): 1391-1394, 1991 Jul 15.
Article in English | MEDLINE | ID: mdl-9999662
11.
Observation of Franz-Keldysh oscillations in the stress-modulated spectra of (001) n-type GaAs.
Yin Y; Yan D; Pollak FH; Pettit GD; Woodall JM.
Phys Rev B Condens Matter ; 43(14): 12138-12141, 1991 May 15.
Article in English | MEDLINE | ID: mdl-9997010
12.
Erratum: Confirmation of the temperature-dependent photovoltaic effect on Fermi-level measurements by photoemission spectroscopy
Chang S; Vitomirov IM; Brillson LJ; Rioux DF; Kirchner PD; Pettit GD; Woodall JM; Hecht MH.
Phys Rev B Condens Matter ; 42(11): 7261, 1990 Oct 15.
Article in English | MEDLINE | ID: mdl-9994860
13.
Confirmation of the temperature-dependent photovoltaic effect on Fermi-level measurements by photoemission spectroscopy.
Chang S; Vitomirov IM; Brillson LJ; Rioux DF; Kirchner PD; Pettit GD; Woodall JM; Hecht MH.
Phys Rev B Condens Matter ; 41(17): 12299-12302, 1990 Jun 15.
Article in English | MEDLINE | ID: mdl-9993693
14.
Orientation-dependent chemistry and Schottky-barrier formation at metal-GaAs interfaces.
Chang S; Brillson LJ; Kime YJ; Rioux DS; Kirchner PD; Pettit D; Woodall JM.
Phys Rev Lett ; 64(21): 2551-2554, 1990 May 21.
Article in English | MEDLINE | ID: mdl-10041741
15.
Structure of GaAs(2 x 4)-c(2 x 8) determined by scanning tunneling microscopy.
Pashley MD; Haberern KW; Friday W; Woodall JM; Kirchner PD.
Phys Rev Lett ; 60(21): 2176-2179, 1988 May 23.
Article in English | MEDLINE | ID: mdl-10038279
16.
Electron-energy-loss scattering near a single misfit dislocation at the GaAs/GaInAs interface.
Batson PE; Kavanagh KL; Woodall JM; Mayer JW.
Phys Rev Lett ; 57(21): 2729-2732, 1986 Nov 24.
Article in English | MEDLINE | ID: mdl-10033846
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