Enhancing GaN/AlxGa1-xN-Based Heterojunction Phototransistors: The Role of Graded Base Structures in Performance Improvement.

This research explores the architecture and efficacy of GaN/AlxGa1-xN-based heterojunction phototransistors (HPTs) engineered with both a compositionally graded and a doping-graded base. Employing theoretical analysis along with empirical fabrication techniques, HPTs configured with an aluminum compositionally graded base were observed to exhibit a substantial enhancement in current gain. Specifically, theoretical models predicted a 12-fold increase, while experimental evaluations revealed an even more pronounced improvement of approximately 27.9 times compared to conventional GaN base structures. Similarly, HPTs incorporating a doping-graded base demonstrated significant gains, with theoretical predictions indicating a doubling of current gain and experimental assessments showing a 6.1-fold increase. The doping-graded base implements a strategic modulation of hole concentration, ranging from 3.8 × 1016 cm-3 at the base-emitter interface to 3.8 × 1017 cm-3 at the base-collector junction. This controlled gradation markedly contributes to the observed enhancements in current gain. The principal mechanism driving these improvements is identified as the increased electron drift within the base, propelled by the intrinsic electric field inherent to both the compositionally and doping-graded structures. These results highlight the potential of such graded base designs in enhancing the performance of GaN/AlxGa1-xN HPTs and provide crucial insights for the advancement of future phototransistor technologies.

Challenges and Recent Advances in High Capacity Li-Rich Cathode Materials for High Energy Density Lithium-Ion Batteries.

Li-rich cathode materials have attracted increasing attention because of their high reversible discharge capacity (>250 mA h g-1 ), which originates from transition metal (TM) ion redox reactions and unconventional oxygen anion redox reactions. However, many issues need to be addressed before their practical applications, such as their low kinetic properties and inefficient voltage fading. The development of cutting-edge technologies has led to cognitive advances in theory and offer potential solutions to these problems. Herein, a recent in-depth understanding of the mechanisms and the frontier electrochemical research progress of Li-rich cathodes are reviewed. In addition, recent advances associated with various strategies to promote the performance and the development of modification methods are discussed. In particular, excluding Li-rich Mn-based (LRM) cathodes, other branches of the Li-rich cathode materials are also summarized. The consistent pursuit is to obtain energy storage devices with high capacity, reliable practicability, and absolute safety. The recent literature and ongoing efforts in this area are also described, which will create more opportunities and new ideas for the future development of Li-rich cathode materials.

Study of biological networks using graph theory.

As an effective modeling, analysis and computational tool, graph theory is widely used in biological mathematics to deal with various biology problems. In the field of microbiology, graph can express the molecular structure, where cell, gene or protein can be denoted as a vertex, and the connect element can be regarded as an edge. In this way, the biological activity characteristic can be measured via topological index computing in the corresponding graphs. In our article, we mainly study the biology features of biological networks in terms of eccentric topological indices computation. By means of graph structure analysis and distance calculating, the exact expression of several important eccentric related indices of hypertree network and X-tree are determined. The conclusions we get in this paper illustrate that the bioengineering has the promising application prospects.

Performance enhancement of AlGaN-based 365 nm ultraviolet light-emitting diodes with a band-engineering last quantum barrier.

In this Letter, the characteristics of the AlGaN-based near-ultraviolet light-emitting diodes with a band-engineering last quantum barrier (LQB) were analyzed experimentally and numerically. The experimental results show that the peak wavelengths of UV-LEDs are around 368 nm with a full width at half-maximum of 12-14 nm, and the optical and electrical properties are improved by using an AlxGa1-xN LQB with a gradually decreasing Al content. The designed LQB can reduce the forward voltage from 4.35 to 4.29 V and markedly enhance LOP by 47.4% at an injection current of 200 mA, compared with the original structure. These improvements are mainly attributed to less electron leakage and higher hole injection efficiency, resulting from the weakened polarization field in the electron-blocking layer (EBL) and LQB, as well as the alleviation of the band bending at the EBL/LQB interface.

High-Quality GaN Epilayers Achieved by Facet-Controlled Epitaxial Lateral Overgrowth on Sputtered AlN/PSS Templates.

It is widely believed that the lack of high-quality GaN wafers severely hinders the progress in GaN-based devices, especially for defect-sensitive devices. Here, low-cost AlN buffer layers were sputtered on cone-shaped patterned sapphire substrates (PSSs) to obtain high-quality GaN epilayers. Without any mask or regrowth, facet-controlled epitaxial lateral overgrowth was realized by metal-organic chemical vapor deposition. The uniform coating of the sputtered AlN buffer layer and the optimized multiple modulation guaranteed high growth selectivity and uniformity of the GaN epilayer. As a result, an extremely smooth surface was achieved with an average roughness of 0.17 nm over 3 × 3 µm2. It was found that the sputtered AlN buffer layer could significantly suppress dislocations on the cones. Moreover, the optimized three-dimensional growth process could effectively promote dislocation bending. Therefore, the threading dislocation density (TDD) of the GaN epilayer was reduced to 4.6 × 107 cm-2, which is about an order of magnitude lower than the case of two-step GaN on the PSS. In addition, contamination and crack in the light-emitting diode fabricated on the obtained GaN were also effectively suppressed by using the sputtered AlN buffer layer. All of these advantages led to a high output power of 116 mW at 500 mA with an emission wavelength of 375 nm. This simple, yet effective growth technique is believed to have great application prospects in high-performance TDD-sensitive optoelectronic and electronic devices.

Synthesis and biological evaluation of novel phosphoramidate derivatives of coumarin as chitin synthase inhibitors and antifungal agents.

A series of novel phosphoramidate derivatives of coumarin have been designed and synthesized as chitin synthase (CHS) inhibitors. All the synthesized compounds have been screened for their chitin synthase inhibition activity and antimicrobial activity in vitro. The bioactive assay manifested that most of the target compounds exhibited good efficacy against CHS and a variety of clinically important fungal pathogens. In particular, compound 7t with IC50 of 0.08 mM against CHS displayed stronger efficiency than the reference Polyoxin B with IC50 of 0.16 mM. In addition, the apparent Ki values of compound 7t was 0.096 mM while the Km of Chitin synthase prepared from Candida tropicalis was 3.86 mM for UDP-N-acetylglucosamine, and the result of the Ki showed that the compounds was a non-competitive inhibitor of the CHS. As far as the antifungal activity is concerned, compounds 7o, 7r and 7t were highly active against Aspergillus flavus with MIC values in the range of 1 µg/mL to 2 µg/Ml while the results of antibacterial screening showed that these compounds have negligible actions to the tested bacteria. These results indicated that the design of these compounds as antifungal agents was rational.

Synthesis and biological evaluation of novel 3-substituted amino-4-hydroxylcoumarin derivatives as chitin synthase inhibitors and antifungal agents.

A series of novel 3-substituted amino-4-hydroxycoumarin derivatives have been designed and synthesized as chitin synthase (CHS) inhibitors. All the synthesized compounds have been screened for their CHS inhibition activity and antimicrobial activity in vitro. The enzymatic assay indicated that most of the compounds have good inhibitory activity against CHS, in which compound 6o with IC50 of 0.10 mmol/L had stronger activity than that of polyoxins B, which acts as control drug with IC50 of 0.18 mmol/L. As far as the antifungal activity is concerned, most of the compounds possessed moderate to excellent activity against some representative pathogenic fungi. Especially, compound 6b was found to be the most potent agent against Cryptococcus neoformans with minimal inhibitory concentration (MIC) of 4 µg/mL. Moreover, the results of antibacterial screening showed that these compounds have negligible actions to some tested bacteria. Therefore, these compounds would be promising to develop selective antifungal agents.