ABSTRACT
We have reported the precise methodology for fabricating graphene quantum dots through electroburning and performed measurements on the Coulomb blockade and oscillation phenomena. The diameters of graphene quantum dots can be estimated to range from several to tens of nanometers, utilizing the disk capacitance model and the two-dimensional quantum well model. By subjecting the quantum dots to a vertical magnetic field, an obvious alteration in conductance can be detected at the point of resonance tunneling. This observed phenomenon can be attributed to the modification in the density of states of Landau levels within the graphene leads. Moreover, by manipulating the gate voltage, it is possible to regulate the Fermi level of the lead, resulting in distinct magnetoresistance of different electron states. The presence of this lead effect may potentially disrupt the magnetic response analysis of graphene-based single-molecule transistors, necessitating a comprehensive theoretical examination to mitigate such interference.
