Energy-Efficient ReS2-Based Optoelectronic Synapse for 3D Object Reconstruction and Recognition.

The neuromorphic vision system (NVS) equipped with optoelectronic synapses integrates perception, storage, and processing and is expected to address the issues of traditional machine vision. However, owing to their lack of stereo vision, existing NVSs focus on 2D image processing, which makes it difficult to solve problems such as spatial cognition errors and low-precision interpretation. Consequently, inspired by the human visual system, an NVS with stereo vision is developed to achieve 3D object recognition, depending on the prepared ReS2 optoelectronic synapse with 12.12 fJ ultralow power consumption. This device exhibits excellent optical synaptic plasticity derived from the persistent photoconductivity effect. As the cornerstone for 3D vision, color planar information is successfully discriminated and stored in situ at the sensor end, benefiting from its wavelength-dependent plasticity in the visible region. Importantly, the dependence of the channel conductance on the target distance is experimentally revealed, implying that the structure information on the object can be directly captured and stored by the synapse. The 3D image of the object is successfully reconstructed via fusion of its planar and depth images. Therefore, the proposed 3D-NVS based on ReS2 synapses for 3D objects achieves a recognition accuracy of 97.0%, which is much higher than that for 2D objects (32.6%), demonstrating its strong ability to prevent 2D-photo spoofing in applications such as face payment, entrance guard systems, and others.

In-Situ Chemical Thinning and Surface Doping of Layered Bi2Se3.

As a promising topological insulator, two-dimensional (2D) bismuth selenide (Bi2Se3) attracts extensive research interest. Controllable surface doping of layered Bi2Se3 becomes a crucial issue for the relevant applications. Here, we propose an efficient method for the chemical thinning and surface doping of layered Bi2Se3, forming Se/Bi2Se3 heterostructures with tunable thickness ranging from a few nanometers to hundreds of nanometers. The thickness can be regulated by varying the reaction time and large-size few-layer Bi2Se3 sheets can be obtained. Different from previous liquid-exfoliation methods that require complex reaction process, in-situ and thickness-controllable exfoliation of large-size layered Bi2Se3 can be realized via the developed method. Additionally, the formation of Se nanomeshes coated on the Bi2Se3 sheets remarkably enhance the intensity of Raman vibration peaks, indicating that this method can be used for surface-enhanced Raman scattering. The proposed chemical thinning and surface-doping method is expected to be extended to other bulk-layered materials for high-efficient preparation of 2D heterostructures.

A Bioinspired Retinomorphic Device for Spontaneous Chromatic Adaptation.

Chromatic adaptation refers to the sensing and preprocessing of the spectral composition of incident light on the retina, and it is important for color-image recognition. It is challenging to apply sensing, memory, and processing functions to color images via the same physical process using the complementary metal-oxide-semiconductor technology because of redundant data detection, complicated signal conversion processes, and the requirement for additional memory modules. Inspired by the highly efficient chromatic adaptation of the human retina, a 2D oxygen-mediated platinum diselenide (PtSe2 ) device is presented to simultaneously apply sensing, memory, and processing functions to color images. The device exhibits a wavelength-dependent bipolar photoresponse and the linear pulse-number dependence of photoconductivity, which is dominated by the photon-mediated physical adsorption and desorption of oxygen molecules on bilayer PtSe2 . The proposed retinomorphic device shows superior image classification accuracy (over 90%) compared to an independent pseudocolor channel (less than 75%). Hence, it is promising for developing artificial vision perception systems with reduced architectural complexity.

Nonreciprocal Transport in a Bilayer of MnBi2Te4 and Pt.

MnBi2Te4 (MBT) is the first intrinsic magnetic topological insulator with the interaction of spin-momentum locked surface electrons and intrinsic magnetism, and it exhibits novel magnetic and topological phenomena. Recent studies suggested that the interaction of electrons and magnetism can be affected by the Mn-doped Bi2Te3 phase at the surface due to inevitable structural defects. Here, we report an observation of nonreciprocal transport, that is, current-direction-dependent resistance, in a bilayer composed of antiferromagnetic MBT and nonmagnetic Pt. The emergence of the nonreciprocal response below the Néel temperature confirms a correlation between nonreciprocity and intrinsic magnetism in the surface state of MBT. The angular dependence of the nonreciprocal transport indicates that nonreciprocal response originates from the asymmetry scattering of electrons at the surface of MBT mediated by magnon. Our work provides an insight into nonreciprocity arising from the correlation between magnetism and Dirac surface electrons in intrinsic magnetic topological insulators.

Controlled Epitaxial Growth and Atomically Sharp Interface of Graphene/Ferromagnetic Heterostructure via Ambient Pressure Chemical Vapor Deposition.

The strong spin filtering effect can be produced by C-Ni atomic orbital hybridization in lattice-matched graphene/Ni (111) heterostructures, which provides an ideal platform to improve the tunnel magnetoresistance (TMR) of magnetic tunnel junctions (MTJs). However, large-area, high-quality graphene/ferromagnetic epitaxial interfaces are mainly limited by the single-crystal size of the Ni (111) substrate and well-oriented graphene domains. In this work, based on the preparation of a 2-inch single-crystal Ni (111) film on an Al2O3 (0001) wafer, we successfully achieve the production of a full-coverage, high-quality graphene monolayer on a Ni (111) substrate with an atomically sharp interface via ambient pressure chemical vapor deposition (APCVD). The high crystallinity and strong coupling of the well-oriented epitaxial graphene/Ni (111) interface are systematically investigated and carefully demonstrated. Through the analysis of the growth model, it is shown that the oriented growth induced by the Ni (111) crystal, the optimized graphene nucleation and the subsurface carbon density jointly contribute to the resulting high-quality graphene/Ni (111) heterostructure. Our work provides a convenient approach for the controllable fabrication of a large-area homogeneous graphene/ferromagnetic interface, which would benefit interface engineering of graphene-based MTJs and future chip-level 2D spintronic applications.

Fermi Velocity Reduction of Dirac Fermions around the Brillouin Zone Center in In2 Se3 -Bilayer Graphene Heterostructures.

Emergent phenomena such as unconventional superconductivity, Mott-like insulators, and the peculiar quantum Hall effect in graphene-based heterostructures are proposed to stem from the superlattice-induced renormalization of (moiré) Dirac fermions at the graphene Brillouin zone corners. Understanding the corresponding band structure commonly demands photoemission spectroscopy with both sub-meV resolution and large-momentum coverage, beyond the capability of the current state-of-the-art. Here the realization of moiré Dirac cones around the Brillouin zone center in monolayer In2 Se3 /bilayer graphene heterostructure is reported. The renormalization is evidenced by reduced Fermi velocity (≈23%) of the moiré Dirac cones and the reshaped Dirac point at the Γ point where they intersect. While there have been many theoretical predictions and much indirect experimental evidence, the findings here are the first direct observation of Fermi velocity reduction of the moiré Dirac cones. These features suggest strong In2 Se3 /graphene interlayer coupling, which is comparable with that in twisted bilayer graphene. The strategy expands the choice of materials in the heterostructure design and stimulates subsequent broad investigations of emergent physics at the sub-meV energy scale.

Enhanced Terahertz Radiation by Efficient Spin-to-Charge Conversion in Rashba-Mediated Dirac Surface States.

The enhancement of terahertz (THz) radiation is of extreme significance for the realization of the THz probe and imaging. However, present THz technologies are far from being enough to realize high-performance and room-temperature THz sources. Fortunately, topological insulators (TIs), with spin-momentum-locked Dirac surface states, are expected to exhibit a high terahertz emission efficiency. In this work, the novel concept of a Rashba-state-enhanced spintronic THz emitter is demonstrated on the basis of ferromagnet/heavy metal/topological insulator (FM/HM/TI) heterostructure. We find that the THz emission intensity changes as a function of HM interlayer thickness, and a 1.98 times higher intensity compared to that of FM/TI can be achieved when a meticulously designed thickness of the HM layer is inserted. The improvement of terahertz radiation is ascribed to the additive effect of Rashba splitting and topological surface states at the HM/TI interface. These results offer new possibilities for realizing spintronic THz emitters in TI-based magnetic heterostructures.

Quantum Transport Signatures of a Close Candidate for a Type II Nodal-Line Semimetal.

The nodal-line semimetal is a new type of topological state of matter in which the crossing of two energy bands forms a nodal loop. In the absence of spin-orbit coupling, Mg3Bi2 is predicted as a type II nodal-line semimetal, which may evolve to a topological insulator with a small energy gap of ∼35 meV in the presence of spin-orbit coupling. However, the transport evidence is still lacking. Here, we measure the magneto-transport in Mg3Bi2. At low temperatures, the magnetoconductivity exhibits a weak antilocalization behavior. We fit the experimental data with a magnetoconductivity formula for the weak antilocalization effect of three-dimensional nodal-line semimetals as well as the well-known Hikami-Larkin-Nagaoka formula for two-dimensional weak (anti)localization effects. By comparing the fitting results of these two theories, we demonstrate that the weak antilocalization in Mg3Bi2 is better described by the theory for nodal-line semimetals. Our work will inspire more explorations to use the new weak localization theory to identify a large spectrum of nodal-line semimetals.

Dimensional Crossover and Topological Nature of the Thin Films of a Three-Dimensional Topological Insulator by Band Gap Engineering.

Identification and control of topological phases in topological thin films offer great opportunities for fundamental research and the fabrication of topology-based devices. Here, combining molecular beam epitaxy, angle-resolved photoemission spectroscopy, and ab initio calculations, we investigate the electronic structure evolution in (Bi1-xInx)2Se3 films (0 ≤ x ≤ 1) with thickness from 2 to 13 quintuple layers. By employing both thickness and In substitution as two independent "knobs" to control the gap change, we identify the evolution between several topological phases, i.e., dimensional crossover from a three-dimensional topological insulator to its two-dimensional counterpart with gapped surface state, and topological phase transition from a topological insulator to a normal semiconductor with increasing In concentration. Furthermore, by introducing In substitution, we experimentally demonstrated the trivial topological nature of Bi2Se3 thin films (below 6 quintuple layers) as two-dimensional gapped systems, consistent with our theoretical calculations. Our results provide not only a comprehensive phase diagram of (Bi1-xInx)2Se3 and a route to control its phase evolution but also a practical way to experimentally determine the topological properties of a gapped compound by a topological phase transition and band gap engineering.

Negative Zero-Field-Cooled Magnetization in YMn0.5Cr0.5O3 due to Giant Coercivity and Trapped Field.

We report an intensive study on negative magnetization under zero-field-cooled (ZFC) mode in YMn0.5Cr0.5O3 polycrystalline samples. It has been found that the magnetization reversal in ZFC measurements is strongly related to a giant coercivity of the oxide. The giant coercivity may result from the cooperative effect of magnetocrystalline anisotropy and the Dzyaloshinsky-Moriya interaction, especially at temperatures below 10 K. By fitting the high-temperature paramagnetic data under nominal zero field, the value of the trapped field in a superconducting magnet has been derived to be around several Oe, which further demonstrates that the negative ZFC magnetization is an artifact caused by negative trapped field in combination with the giant coercivity. Consequently, we suggest that one has to be cautious of trapped field in superconducting magnets in understanding negative ZFC magnetization, especially in "hard" magnetic samples.