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1.
Opt Express ; 19(8): 7112-9, 2011 Apr 11.
Article in English | MEDLINE | ID: mdl-21503024

ABSTRACT

Silicon-on-insulator (SOI) has been used as a platform for near-infrared photonic devices for more than twenty years. Longer wavelengths, however, may be problematic for SOI due to higher absorption loss in silicon dioxide. In this paper we report propagation loss measurements for the longest wavelength used so far on SOI platform. We show that propagation losses of 0.6-0.7 dB/cm can be achieved at a wavelength of 3.39 µm. We also report propagation loss measurements for silicon on porous silicon (SiPSi) waveguides at the same wavelength.

2.
Opt Express ; 18(9): 8816-23, 2010 Apr 26.
Article in English | MEDLINE | ID: mdl-20588726

ABSTRACT

In this paper, we demonstrate a direct method of fabricating an all-silicon, single-mode Bragg cladding rib waveguide using proton beam irradiation and subsequent electrochemical etching. The Bragg waveguide consists of porous silicon layers with a low index core of 1.4 that is bounded by eight bilayers of alternating high and low refractive index of 1.4 and 2.4. Here, the ion irradiation acts to reduce the thickness of porous silicon formed, creating an optical barrier needed for lateral confinement. Single-mode guiding with losses as low as approximately 1 dB/cm were obtained for both TE and TM polarization over a broad range of wavelengths from 1525 nm to 1625 nm. Such an approach offers a method for monolithic integration of Bragg waveguides in silicon, without the need for multiple processes of depositing alternating materials.

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