Dual-functional thermal management textiles for dynamic temperature regulation based on ultra-stretchable spiral conductive composite yarn with 500%-strain thermal stability and durability.

Next-generation personal thermal management (PTM) textiles for daily routine environments are attracting extensive attention. However, challenges remain in developing multifunctional PTM textiles that are comfortable to wear, have motion stability and environmental adaptability. Herein, a novel design for fabricating a sandwich-structure PTM textile based on an ultra-stretchable spiral conductive composite yarn (SCCY) with strain-electric stability is proposed. An SCCY composed of carbon nanotubes (CNTs)/polyvinyl pyrrolidone (PVP)/waterborne polyurethane (WPU) and a drawn textured yarn (DTY) is fabricated through a dip-twisting and shaping process. The PVP not only facilitates the interfacial bonding between CNTs and yarn, but also constructs strong hydrogen bond interactions with WPU, resulting in improved structure stability and robust electrical performance. Benefitting from the optimized spiral and composite structure, the SCCY exhibits a fast thermal response (130 °C within 8 s), long-term durability (1500 cycles), and superior thermal stability under large deformation (ΔT/T0 ≈ 8.4%, under 500%). By assembling a stretchable electrothermal fabric based on SCCYs with an elastic fabric and thermochromic layer, temperature visualization and dynamic temperature regulation are integrated into the textile. This multifunctional PTM textile not only features dual thermal regulation modes of radiant cooling and Joule heating, but also maintains flexibility, breathability, and excellent stretchability, which provides broad application prospects in next-generation wearable devices.

Highly Responsive Soft Electrothermal Actuator with High-Output Force Based on Polydimethylsiloxane (PDMS)-Coated Carbon Nanotube (CNT) Sponge.

Recently, soft actuators have been found to have great potential for various applications due to their ability to be mechanically reconfigured in response to external stimuli. However, the balance between output force and considerable strain constrains their potential for further application. In this work, a novel soft electrothermal actuator was fabricated by a polydimethylsiloxane (PDMS)-coated carbon nanotube sponge (CNTS). The results showed that CNTS was heated to 365 °C in ∼1 s when triggered by a voltage of 3.5 V. Consequently, due to the large amount of air inside, the actuator expanded in 2.9 s, lifting up to ∼50 times its weight, indicating an ultrafast response and powerful output force. In addition, even in water, the soft actuator showed quick response at a voltage of 6 V. This air-expand strategy and soft actuator design is believed to open a new horizon in the development of electronic textiles, smart soft robots, and so on.

Group-III nitride heteroepitaxial films approaching bulk-class quality.

III-nitride wide bandgap semiconductors are promising materials for modern optoelectronics and electronics. Their application has progressed greatly thanks to the continuous quality improvements of heteroepitaxial films grown on large-lattice-mismatched foreign substrates. But compared with bulk single crystals, there is still tremendous room for the further improvement of the material quality. Here we show a paradigm to achieve high-quality III-nitride heteroepitaxial films by the controllable discretization and coalescence of columns. By adopting nano-patterned AlN/sapphire templates with regular hexagonal holes, discrete AlN columns coalesce with uniform out-of-plane and in-plane orientations guaranteed by sapphire nitridation pretreatment and the ordered lateral growth of cleavage facets, which efficiently suppresses the regeneration of threading dislocations during coalescence. The density of dislocation etch pits in the AlN heteroepitaxial film reaches 3.3 × 104 cm-2, close to the present available AlN bulk single crystals. This study facilitates the growth of bulk-class quality III-nitride films featuring low cost and scalability.

Super-strong CNT composite yarn with tight CNT packing via a compress-stretch process.

Carbon nanotube yarn (CNTY) with a large size and excellent mechanical properties could have wide technological influence in fields ranging from electrical devices to wearable textiles; however, inventing such CNTY has remained excessively challenging. Herein, we introduce an interesting approach to produce highly densified, robust CNT/polyvinyl alcohol composite yarn (CNT/PVA-P CY) with a large diameter and excellent comprehensive properties via a compressing and stretching method. Our method allows the PVA polymer chains to be well-dispersed into CNT intra- and inner-bundles with a controllable diameter and desirable mechanical properties. The resulting CNT/PVA-P CY exhibits an ultra-large diameter (∼140 µm), admirable mechanical properties (tensile strength of up to 1475 MPa and Young's modulus of up to 24.98 GPa), light weight (1.28 g cm-3), high electrical conductivity (792 S cm-1), outstanding flexibility, and anti-abrasive abilities. The successful obtainment of such attractive properties in yarns may provide new insights for the construction and exploitation of CNTY as a potential candidate to replace traditional carbon fibers for various applications.

Sub-nanometer ultrathin epitaxy of AlGaN and its application in efficient doping.

Solving the doping asymmetry issue in wide-gap semiconductors is a key difficulty and long-standing challenge for device applications. Here, a desorption-tailoring strategy is proposed to juggle the carrier concentration and transport. Specific to the p-doping issue in Al-rich AlGaN, self-assembled p-AlGaN superlattices with an average Al composition of over 50% are prepared by adopting this approach. The hole concentration as high as 8.1 × 1018 cm-3 is thus realized at room temperature, which is attributed to the significant reduction of effective Mg activation energy to 17.5 meV through modulating the activating path, as well as the highlighted Mg surface-incorporation by an intentional interruption for desorption. More importantly, benefiting from the constant ultrathin barrier thickness of only three monolayers via this approach, vertical miniband transport of holes is verified in the p-AlGaN superlattices, greatly satisfying the demand of hole injection in device application. 280 nm deep-ultraviolet light-emitting diodes are then fabricated as a demo with the desorption-tailored Al-rich p-AlGaN superlattices, which exhibit a great improvement of the carrier injection efficiency and light extraction efficiency, thus leading to a 55.7% increase of the light output power. This study provides a solution for p-type doping of Al-rich AlGaN, and also sheds light on solving the doping asymmetry issue in general for wide-gap semiconductors.

Unidirectional Elimination of Hydrogen by a Giant Local Field Saves First- and Last-Mile Performances of Semiconductor Devices.

Hydrogen, the smallest element, easily forms bonds to host/dopant atoms in semiconductors, which strongly passivates the original electronic characteristics and deteriorates the final reliability. Here, we demonstrate a concept of unidirectional elimination of hydrogen from semiconductor wafers as well as electronic chips through a giant local electric field induced by compact chloridions. We reveal an interactive behavior of chloridions, which can rapidly approach and take hydrogen atoms away from the device surface. A universal and simple technique based on a solution-mediated three-electrode system achieves efficient hydrogen elimination from various semiconductor wafers (p-GaN, p-AlGaN, SiC, and AlInP) and also complete light emitting diodes (LEDs). The p-type conductivity and light output efficiency of H-eliminated UVC LEDs have been significantly enhanced, and the lifetime is almost doubled. Moreover, we confirm that under a one-second irradiation of UVC LEDs, bacteria and COVID-19 coronavirus can be completely killed (>99.93%). This technology will accelerate the further development of the semiconductor-based electronic industry.

Bio-Inspired Hierarchical Carbon Nanotube Yarn with Ester Bond Cross-Linkages towards High Conductivity for Multifunctional Applications.

The cross-linked hierarchical structure in biological systems provides insight into the development of innovative material structures. Specifically, the sarcoplasmic reticulum muscle is able to transmit electrical impulses in skeletal muscle due to its cross-linked hierarchical tubular cell structure. Inspired by the cross-linked tubular cell structure, we designed and built chemical cross-links between the carbon nanotubes within the carbon nanotube yarn (CNT yarn) structure by an esterification reaction. Consequently, compared with the pristine CNT yarn, its electrical conductivity dramatically enhanced 348%, from 557 S/cm to 1950 S/cm. Furthermore, when applied with three voltages, the electro-thermal temperature of esterified CNT yarn reached 261 °C, much higher than that of pristine CNT yarn (175 °C). In addition, the esterified CNT yarn exhibits a linear and stable piezo-resistive response, with a 158% enhanced gauge factor (the ratio of electrical resistance changing to strain change ~1.9). The superconductivity, flexibility, and stable sensitivity of the esterified flexible CNT yarn demonstrate its great potential in the applications of intelligent devices, smart clothing, or other advanced composites.

Lattice Polarity Manipulation of Quasi-vdW Epitaxial GaN Films on Graphene Through Interface Atomic Configuration.

Quasi van der Waals epitaxy, a pioneering epitaxy of sp3 -hybridized semiconductor films on sp2 -hybridized 2D materials, provides a way, in principle, to achieve single-crystal epilayers with preferred atom configurations that are free of substrate. Unfortunately, this has not been experimentally confirmed in the case of the hexagonal semiconductor III-nitride epilayer until now. Here, it is reported that the epitaxy of gallium nitride (GaN) on graphene can tune the atom arrangement (lattice polarity) through manipulation of the interface atomic configuration, where GaN films with gallium and nitrogen polarity are achieved by forming CONGa(3) or COGaN(3) configurations, respectively, on artificial CO surface dangling bonds by atomic oxygen pre-irradiation on trilayer graphene. Furthermore, an aluminum nitride buffer/interlayer leads to unique metal polarity due to the formation of an AlON thin layer in a growth environment containing trace amounts of oxygen, which explains the open question of why those reported wurtzite III-nitride films on 2D materials always exhibit metal polarity. The reported atomic modulation through interface manipulation provides an effective model for hexagonal nitride semiconductor layers grown on graphene, which definitely promotes the development of novel semiconductor devices.

Hexagonal BN-Assisted Epitaxy of Strain Released GaN Films for True Green Light-Emitting Diodes.

Epitaxial growth of III-nitrides on 2D materials enables the realization of flexible optoelectronic devices for next-generation wearable applications. Unfortunately, it is difficult to obtain high-quality III-nitride epilayers on 2D materials such as hexagonal BN (h-BN) due to different atom hybridizations. Here, the epitaxy of single-crystalline GaN films on the chemically activated h-BN/Al2O3 substrates is reported, paying attention to interface atomic configuration. It is found that chemical-activated h-BN provides B-O-N and N-O bonds, where the latter ones act as effective artificial dangling bonds for following GaN nucleation, leading to Ga-polar GaN films with a flat surface. The h-BN is also found to be effective in modifying the compressive strain in GaN film and thus improves indium incorporation during the growth of InGaN quantum wells, resulting in the achievement of pure green light-emitting diodes. This work provides an effective way for III-nitrides epitaxy on h-BN and a possible route to overcome the epitaxial bottleneck of high indium content III-nitride light-emitting devices.

Rapid Nanowelding of Carbon Coatings onto Glass Fibers by Electrothermal Shock.

With the rapid development of nanomanufacturing, scaling up of nanomaterials requires advanced manufacturing technology to composite nanomaterials with disparate materials (ceramics, metals, and polymers) to achieve hybrid properties and coupling performances for practical applications. Attempts to assemble nanomaterials onto macroscopic materials are often accompanied by the loss of exceptional nanoscale properties during the fabrication process, which is mainly due to the poor contacts between carbon nanomaterials and macroscopic bulk materials. In this work, we proposed a novel cross-scale manufacturing concept to process disparate materials in different length scales and successfully demonstrated an electrothermal shock approach to process the nanoscale material (e.g., carbon nanotubes) and macroscale (e.g., glass fiber) with good bonding and excellent mechanical property for emerging applications. The excellent performance and potentially lower cost of the electrothermal shock technology offers a continuous, ultrafast, energy-efficient, and roll-to-roll process as a promising heating solution for cross-scale manufacturing.

Single-Photon Emission from Point Defects in Aluminum Nitride Films.

Quantum technologies require robust and photostable single-photon emitters. Here, room temperature operated single-photon emissions from isolated defects in aluminum nitride (AlN) films are reported. AlN films were grown on nanopatterned sapphire substrates by metal organic chemical vapor deposition. The observed emission lines range from visible to near-infrared, with highly linear polarization characteristics. The temperature-dependent line width increase shows T3 or single-exponential behavior. First-principle calculations based on density functional theory show that point defect species, such as antisite nitrogen vacancy complex (NAlVN) and divacancy (VAlVN) complexes, are considered to be an important physical origin of observed emission lines ranging from approximately 550 to 1000 nm. The results provide a new platform for on-chip quantum sources.

Bioinspired Superelastic Electroconductive Fiber for Wearable Electronics.

Electroconductive fibers (E-fibers) with excellent flexibility and elasticity are crucial for the advancement of smart textiles for wearable electronics. However, the current metal-based conductive wires are not capable of satisfying the practical demands attributing to their limited stretchability and inferior antiabrasion ability. Herein, we report a superelastic and electroconductive fiber with a spring-like structure, inspired by the unique coiled tendril structures of climbing plants. The E-fiber is constructed by wrapping a flexible yet conductive carbon nanotube/polydimethylsiloxane (CNT/PDMS) composite yarn onto a polyester filament. In this system, the polyester filament provides mechanical robustness and stretchability, while the coiled CNT/PDMS composite yarn (C/P CY) offers sufficient conductivity. Notably, the as-fabricated E-fiber possesses high stretchability (165%), exceptional tensile force (660 cN), extraordinary antiabrasion ability, and remarkable electrical stability under various deformations. In addition, the great air permeability and electrothermal stability are also achieved, which are essential for comfortable wear and steady conduction. The developed E-fiber based on CNT composite wrapping yarn, together with its exceptional mechanical and electrical performance, provides the material with promising prospects for practical applications in wearable electronics.

High-Mobility Two-Dimensional Electron Gas at InGaN/InN Heterointerface Grown by Molecular Beam Epitaxy.

Due to the intrinsic spontaneous and piezoelectric polarization effect, III-nitride semiconductor heterostructures are promising candidates for generating 2D electron gas (2DEG) system. Among III-nitrides, InN is predicted to be the best conductive-channel material because its electrons have the smallest effective mass and it exhibits large band offsets at the heterointerface of GaN/InN or AlN/InN. Until now, that prediction has remained theoretical, due to a giant gap between the optimal growth windows of InN and GaN, and the difficult epitaxial growth of InN in general. The experimental realization of 2DEG at an InGaN/InN heterointerface grown by molecular beam epitaxy is reported here. The directly probed electron mobility and the sheet electron density of the InGaN/InN heterostructure are determined by Hall-effect measurements at room temperature to be 2.29 × 103 cm2 V-1 s-1 and 2.14 × 1013 cm-2, respectively, including contribution from the InN bottom layer. The Shubnikov-de Haas results at 3 K confirm that the 2DEG has an electron density of 3.30 × 1012 cm-2 and a quantum mobility of 1.48 × 103 cm2 V-1 s-1. The experimental observations of 2DEG at the InGaN/InN heterointerface have paved the way for fabricating higher-speed transistors based on an InN channel.

Enhanced Hydrogen Detection Based on Mg-Doped InN Epilayer.

It is a fact that surface electron accumulation layer with sheet electron density in the magnitude of ~1013 cm−2 on InN, either as-grown or Mg-doped, makes InN an excellent candidate for sensing application. In this paper, the response of hydrogen sensors based on Mg-doped InN films (InN:Mg) grown by molecular beam epitaxy has been investigated. The sensor exhibits a resistance variation ratio of 16.8% with response/recovery times of less than 2 min under exposure to 2000 ppm H2/air at 125 °C, which is 60% higher in the magnitude of response than the one based on the as-grown InN film. Hall-effect measurement shows that the InN:Mg with suitable Mg doping level exhibits larger sheet resistance, which accords with buried p-type conduction in the InN bulk. This work shows the advantage of InN:Mg and signifies its potential for sensing application.

From Wood to Textiles: Top-Down Assembly of Aligned Cellulose Nanofibers.

Advanced textiles made of macroscopic fibers are usually prepared from synthetic fibers, which have changed lives over the past century. The shortage of petrochemical resources, however, greatly limits the development of the textile industry. Here, a facile top-down approach for fabricating macroscopic wood fibers for textile applications (wood-textile fibers) comprising aligned cellulose nanofibers directly from natural wood via delignification and subsequent twisting is demonstrated. Inherently aligned cellulose nanofibers are well retained, while the microchannels in the delignified wood are squeezed and totally removed by twisting, resulting in a dense structure with approximately two times higher mechanical strength (106.5 vs 54.9 MPa) and ≈20 times higher toughness (7.70 vs 0.36 MJ m-3 ) than natural wood. Dramatically different from natural wood, which is brittle in nature, the resultant wood-textile fibers are highly flexible and bendable, likely due to the twisted structures. The wood-textile fibers also exhibit excellent knitting properties and dyeability, which are critical for textile applications. Furthermore, functional wood-textile fibers can be achieved by preinfiltrating functional materials in the delignified wood film before twisting. This top-down approach of fabricating aligned macrofibers is simple, scalable, and cost-effective, representing a promising direction for the development of smart textiles and wearable electronics.

Epitaxial Welding of Carbon Nanotube Networks for Aqueous Battery Current Collectors.

Carbon nanomaterials are desirable candidates for lightweight, highly conductive, and corrosion-resistant current collectors. However, a key obstacle is their weak interconnection between adjacent nanostructures, which renders orders of magnitude lower electrical conductivity and mechanical strength in the bulk assemblies. Here we report an "epitaxial welding" strategy to engineer carbon nanotubes (CNTs) into highly crystalline and interconnected structures. Solution-based polyacrylonitrile was conformally coated on CNTs as "nanoglue" to physically join CNTs into a network, followed by a rapid high-temperature annealing (>2800 K, overall ∼30 min) to graphitize the polymer coating into crystalline layers that also bridge the adjacent CNTs to form an interconnected structure. The contact-welded CNTs (W-CNTs) exhibit both a high conductivity (∼1500 S/cm) and a high tensile strength (∼120 MPa), which are 5 and 20 times higher than the unwelded CNTs, respectively. In addition, the W-CNTs display chemical and electrochemical stabilities in strong acidic/alkaline electrolytes (>6 mol/L) when potentiostatically stressing at both cathodic and anodic potentials. With these exceptional properties, the W-CNT films are optimal as high-performance current collectors and were demonstrated in the state-of-the-art aqueous battery using a "water-in-salt" electrolyte.

Enhancing Electrochemical Performance of Graphene Fiber-Based Supercapacitors by Plasma Treatment.

Graphene fiber-based supercapacitors (GFSCs) hold high power density, fast charge-discharge rate, ultralong cycling life, exceptional mechanical/electrical properties, and safe operation conditions, making them very promising to power small wearable electronics. However, the electrochemical performance is still limited by the severe stacking of graphene sheets, hydrophobicity of graphene fibers, and complex preparation process. In this work, we develop a facile but robust strategy to easily enhance electrochemical properties of all-solid-state GFSCs by simple plasma treatment. We find that 1 min plasma treatment under an ambient condition results in 33.1% enhancement of areal specific capacitance (36.25 mF/cm2) in comparison to the as-prepared GFSC. The energy density reaches 0.80 µW h/cm2 in polyvinyl alcohol/H2SO4 gel electrolyte and 18.12 µW h/cm2 in poly(vinylidene difluoride)/ethyl-3-methylimidazolium tetrafluoroborate electrolyte, which are 22 times of that of as-prepared ones. The plasma-treated GFSCs also exhibit ultrahigh rate capability (69.13% for 40 s plasma-treated ones) and superior cycle stability (96.14% capacitance retention after 20 000 cycles for 1 min plasma-treated ones). This plasma strategy can be extended to mass-manufacture high-performance carbonaceous fiber-based supercapacitors, such as graphene and carbon nanotube-based ones.

Impacts of future climate and land cover changes on threatened mammals in the semi-arid Chinese Altai Mountains.

Dryland biodiversity plays important roles in the fight against desertification and poverty, but is highly vulnerable to the impacts of environmental change. However, little research has been conducted on dual pressure from climate and land cover changes on biodiversity in arid and semi-arid environments. Concequntly, it is crutial to understand the potential impacts of future climate and land cover changes on dryland biodiversity. Here, using the Chinese Altai Mountains as a case study area, we predicted the future spatial distributions and local assemblages of nine threatened mammal species under projected climate and land cover change scenarios for the period 2010-2050. The results show that remarkable declines in mammal species richness as well as high rates of species turnover are seen to occur across large areas in the Chinese Altai Mountains, highlighting an urgent need for developing protection strategies for areas outside of current nature reserve network. The selected mammals are predicted to lose more than 50% of their current ranges on average, which is much higher than species' range gains (around 15%) under future climate and land cover changes. Most of the species are predicted to contract their ranges while moving eastwards and to higher altitudes, raising the need for establishing cross-border migration pathways for species. Furthermore, the inclusion of land cover changes had notable effects on projected range shifts of individual species under climate changes, demonstrating that land cover changes should be incorporated into the assessment of future climate impacts to facilitate biodiversity conservation in arid and semi-arid environments.

Direct evidence of recombination between electrons in InGaN quantum discs and holes in p-type GaN.

Intense emission from an InGaN quantum disc (QDisc) embedded in a GaN nanowire p-n junction is directly resolved by performing cathodoluminescence spectroscopy. The luminescence observed from the p-type GaN region is exclusively dominated by the emission at 380 nm, which has been usually reported as the emission from Mg induced impurity bands. Here, we confirm that the robust emission from 380 nm is actually not due to the Mg induced impurity bands, but rather due to being the recombination between electrons in the QDisc and holes in the p-type GaN. This identification helps to get a better understanding of the confused luminescence from nanowires with thin QDiscs embedded for fabricating electrically driven single photon emitters.

On the electric-field reservoir for III-nitride based deep ultraviolet light-emitting diodes.

The drift velocity for holes is strongly influenced by the electric field in the p-type hole injection layer for III-nitride based deep ultraviolet light-emitting diodes (DUV LEDs). In this work, we propose an electric-field reservoir (EFR) consisting of a p-AlxGa1-xN/p-GaN architecture to facilitate the hole injection and improve the internal quantum efficiency (IQE). The p-AlxGa1-xN layer in the EFR can well reserve the electric field that can moderately adjust the drift velocity and the kinetic energy for holes. As a result, we are able to enhance the thermionic emission for holes to cross over the p-EBL with a high Al composition provided that the composition in the p-AlxGa1-xN layer is properly optimized to avoid a complete hole depletion therein.