ABSTRACT
Anomalous negative phototransistors have emerged as a distinct research area, characterized by a decrease in channel current under light illumination. Recently, their potential applications have been expanded beyond photodetection. Despite the considerable attention given to negative phototransistors, negative photoconductance (NPC) in particular remains relatively unexplored, with limited research advancements as compared to well-established positive phototransistors. In this study, we designed ferroelectric field-effect transistors (FeFETs) based on the WSe2/CIPS van der Waals (vdW) vertical heterostructures with a buried-gated architecture. The transistor exhibits NPC and positive photoconductance (PPC), demonstrating the significant role of ferroelectric polarization in the distinctive photoresponse. The observed inverse photoconductance can be attributed to the dynamic switching of ferroelectric polarization and interfacial charge transfer processes, which have been investigated experimentally and theoretically using Density Functional Theory (DFT). The unique phenomena enable the coexistence of controllable and polarity-switchable PPC and NPC. The novel feature holds tremendous potential for applications in optical encryption, where the specific gate voltages and light can serve as universal keys to achieve modulation of conductivity. The ability to manipulate conductivity in response to optical stimuli opens up new avenues for developing secure communication systems and data storage technologies. Harnessing this feature enables the design of advanced encryption schemes that rely on the unique properties of our material system. The study not only advances the development of NPC but also paves the way for more robust and efficient methods of optical encryption, ensuring the confidentiality and integrity of critical information in various domains, including data transmission, and information security.
ABSTRACT
Critical thinking, communication, collaboration, and creativity are four fundamental skills for students in the 21st century, indicating the way for nurturing talents required for future social development. Interdisciplinary thematic learning has become an important educational carrier for "4C Skills" training, with its connotation coinciding with the training requirements of "4C Skills." Few academics, however, have looked into interdisciplinary thematic learning activities based on real-world problems. In this study, using a middle school in Xiamen, Fujian Province as an example, 32 s-year students in middle school were given several problem-solving tasks relevant to "visual disaster weather." Based on test coding and questionnaire evaluation, class notes, course videos, student solutions, and interview texts, we examined the development of students' 4C skills through real-world problem-based interdisciplinary thematic learning activities. This study discovered that an interdisciplinary thematic learning environment centered on real-world challenges fosters students' creative thinking in open practice while also encouraging group communication and collaboration. Students also gain critical thinking skills through questioning and critique.
ABSTRACT
Flexoelectricity originates from the electromechanical coupling interaction between strain gradient and polarization, broadly applied in developing electromechanical and energy devices. However, the study of quantifying the longitudinal flexoelectric coefficient (µ11) which is important for the application of atomic-scale two-dimensional (2D) materials is still in a slow-moving stage, owing to the technical challenges. Based on the free-standing suspension structure, this paper proposes a widely applicable method and a mensurable formula for determining the µ11 constant of layer-dependent 2D materials with high precision. A combination of in situ micro-Raman spectroscopy and piezoresponse force microscopy (PFM) imaging was used to quantify the strain distribution and effective out-of-plane electromechanical coupling, respectively, for µ11 constant calculation. The µ11 constants and their physical correlation with the variable mechanical conditions of naturally bent structures have been obtained extensively for the representative mono-to-few layered MX2 family (M = W and Mo; X = S and Se), and the result is perfectly consistent with the estimated order-of-magnitude of the µ11 value (about 0.065) of monolayer MoS2. The quantification of the flexoelectric constant in this work not only promotes the understanding of mechanical and electromechanical properties in van der Waals materials, but also paves the way for developing novel 2D nano-energy devices and mechanical transducers based on flexoelectric effects.
ABSTRACT
Lithium-sulfur batteries are promising next-generation energy storage systems with high theoretical specific capacity. Despite extensive research efforts, it is still challenging to rationally design electrocatalysts with fast kinetics and effective adsorption of polysulfides. Herein, Fe-doped ReS2 (Fe-ReS2) ultrathin nanosheets are prepared as an electrocatalyst to trap the intermediates and accelerate the sulfur reduction reaction kinetics. Density functional theory calculations combined with activation energies in the multistep sulfur reduction reaction reveal that the Fe-ReS2 considerably reduces the activation energy and optimizes the optimum adsorption strength of polysulfides and catalytic activity. The Fe-ReS2/S exhibits a highly reversible discharge capacity of 882.3 mA h g-1 at 1 C. For 500 cycles, the capacity fade rate is 0.013% per cycle. Moreover, in situ Raman spectroscopy measurements further confirmed that both sulfur reduction and oxidation processes were significantly enhanced by Fe-ReS2.
ABSTRACT
Flexible memory and wearable electronics represent an emerging technology, thanks to their reliability, compatibility, and superior performance. Here, an Sb2TexSe3-x (STSe) phase change material was grown on flexible mica, which not only exhibited superior nature in thermal stability for phase change memory application but also revealed novel function performance in wearable electronics, thanks to its excellent mechanical reliability and endurance. The thermal stability of Sb2Te3 was improved obviously with the crystallization temperature elevated 60 K after Se doping, for the enhanced charge localization and stronger bonding energy, which was validated by the Vienna ab initio simulation package calculations. Based on the ultra-stability of STSe, the STSe-based phase change memory shows 65 000 reversible phase change ability. Moreover, the assembled flexible device can show real-time monitoring and recoverability response in sensing human activities in different parts of the body, which proves its effective reusability and potential as wearable electronics. Most importantly, the STSe device presents remarkable working reliability, reflected by excellent endurance over 100 s and long retention over 100 h. These results paved a novel way to utilize STSe phase change materials for flexible memory and wearable electronics with extreme thermal and mechanical stability and brilliant performance.
Subject(s)
Wearable Electronic Devices , Electronics/methods , Humans , Reproducibility of ResultsABSTRACT
Despite the growing interest in halide perovskite-based NH3 sensors, the NH3 sensing mechanism is still not well understood. Here, we report an anomalous behavior of resistance enhancement in CH3NH3PbI3(MAPbI3) perovskite films upon exposure to NH3 gas, which is contrary to a resistance drop trend in previously reported perovskites. We propose a NH3 sensing mechanism in which the anomalous resistance enhancement is dominated by grain boundaries of perovskites. It is demonstrated that NH3 molecules can substitute MA+ cations of MAPbI3 to form the insulating NH4PbI3·MA intermediate layers onto the surface of crystal grains, thereby resulting in an increase of resistance. Additionally, we construct the MAPbI3-based sensor, and achieve a gas response of 472% toward 30 ppm of NH3. This study suggests the potential of the perovskite-based NH3 sensors, and also provides guidance for developing high-performance sensing perovskite materials.
ABSTRACT
Flexoelectricity and photoelectricity with their coupled effect (the so-called flexo-photoelectronic effect), are of increasing interest in the study of electronics and optoelectronics in van der Waals layered semiconductors. However, the related device design is severely restricted owing to the ambiguous underlying physical nature of flexo-photoelectronic effects originating from the co-manipulation of light and strain-gradients. Here, flexoelectric polarization and the flexo-photoelectronic effect of few-layered semiconductors have been multi-dimensionally investigated from high-resolution microscopic characterization on the nanoscale, physics analysis, and deriving a device design. We found that two back-to-back built-in electric fields form in bent InSe and WSe2, and greatly modulate the transport behaviors of photogenerated carriers, further facilitating the separation of photogenerated electron-hole pairs and trapping the holes/electrons in InSe or WSe2 channels, recorded in realtime by a home-made technique of lighting Kelvin probe force microscopy (KPFM). The slow release of trapped carriers contributes to the photoconductance relaxation after illumination. Utilizing the photoconductance relaxation, a light-stimulated artificial synapse based on the flexo-photoelectronic effect of bent InSe has been achieved. Significantly, all the pair-pulse facilitation (PPF) behavior, spike frequency-dependent excitatory post-synaptic current (EPSC) and the transition from short-term memory (STM) to long-term memory (LTM) have been successfully realized in this artificial synapse. This work adds to the investigation of flexo-photoelectronic effects on 2D optoelectronics, and moves towards the development of 2D neuromorphic electronics.
