ABSTRACT
Phase change materials (PCMs) are used to cool high-power-density electronic devices because of their high latent heat and chemical stability. However, their low thermal conductivity limits the application of PCMs. To solve this problem, a double-porosity porous aluminum skeleton/paraffin phase change materials (DPAS/PCM) was prepared via additive manufacturing and the water-bath method. The thermal performance of the DPAS/PCM heat sink (HS) was experimentally investigated to examine the effects of the positive- and reverse-gradient porosity structures of the DPAS/PCM. The results show that a positive-gradient porosity arrangement is more conducive to achieving a low-temperature cooling target for LED operation. In particular, the temperature control time for the positive gradient porosity structure increased by 4.6-13.7% compared with the reverse gradient porosity structure. Additionally, the thermal performances of uniform porous aluminum skeleton/paraffin (UAS) and DPAS/PCMs were investigated. The temperature control effect of the DPAS/PCM was better than that of the UAS/PCM HS at high critical temperatures. Compared with the UAS/PCM HS, the temperature control time of the DPAS/PCM HS is increased by 7.8-12.5%. The results of this work show that the prepared DPAS/PCM is a high-potential hybrid system for thermal management of high-power electronic devices.
ABSTRACT
Broad-area lasers (BALs) have found applications in a variety of crucial fields on account of their high output power and high energy transfer efficiency. However, they suffer from poor spatial beam quality due to multi-mode behavior along the waveguide transverse direction. In this paper, we propose a novel metasurface waveguide structure acting as a transverse mode selective back-reflector for BALs. In order to effectively inverse design such a structure, a digital adjoint algorithm is introduced to adapt the considerably large design area and the high degree of freedom. As a proof of the concept, a device structure with a design area of 40 × 20 µm2 is investigated. The simulation results exhibit high fundamental mode reflection (above 90%), while higher-order transverse mode reflections are suppressed below 0.2%. This is, to our knowledge, the largest device structure designed based on the inverse method. We exploited such a device and the method and further investigated the device's robustness and feasibility of the inverse method. The results are elaborately discussed.
ABSTRACT
To satisfy the demand for efficient heat transfer, a novel three-dimensional overall jagged internal finned tube (3D-OJIFT) was fabricated, using the rolling-ploughing/extruding method. The thermal performance of the 3D-OJIFT were studied and compared in experiments and three-dimensional numerical simulations. The RNG k-ε turbulence model is well verified with the experimental results. By analyzing the distributions of velocity, temperature, and turbulence kinetic energy, it was found that the 3D-OJIFT destroyed the development of the velocity and thermal boundary layers, increased the turbulence disturbance, and reduced the temperature gradient, thus improving the heat transfer. The influences of the jagged height and jagged spiral angle of the 3D-OJIFT are discussed. The Nu and f increased as the jagged height of the 3D-OJIFT increased. The Nusselt number of the 3D-OJIFT was 1.67-2.04 times the value for the smooth tube. In addition, the comprehensive heat transfer performance of the 3D-OJIFT improved after increasing the jagged spiral angle. Compared with conventional internal helical-finned tubes and other reinforcement structures reported in the literature, the 3D-OJIFT demonstrated better comprehensive heat transfer performance. Finally, empirical correlations of the 3D-OJIFT were obtained.
ABSTRACT
On-chip optical modulators, which are capable of converting electrical signals into optical signals, constitute the foundational components of photonic devices. Photonics modulators exhibiting high modulation efficiency and low insertion loss are highly sought after in numerous critical applications, such as optical phase steering, optical coherent imaging, and optical computing. This paper introduces a novel accumulation-type vertical modulator structure based on a silicon photonics platform. By incorporating a high-K dielectric layer of ZrO2, we have observed an increase in modulation efficiency while maintaining relatively low levels of modulation loss. Through meticulous study and optimization, the simulation results of the final device structure demonstrate a modulation efficiency of 0.16 V·cm, with a mere efficiency-loss product of 8.24 dB·V.
