ABSTRACT
Radiofrequency (RF) diodes used for fifth and sixth-generation (5G and 6G) mobile and wireless communication networks generally require ultrahigh cut-off frequencies and high integration densities of devices with different functions on a single chip and at low cost. Carbon nanotube diodes are promising devices for radiofrequency applications, but the cut-off frequencies are still far below the theoretical estimates. Here, a carbon nanotube diode that operates in the millimeter-wave frequency bands and is based on solution-processed, high-purity carbon nanotube network films is reported. The carbon nanotube diodes exhibit an intrinsic cut-off frequency over 100 GHz and the as-measured bandwidth can exceed 50 GHz at least. Furthermore, The rectification ratio of the carbon nanotube diode by approximately three times by using yttrium oxide for local p-type doping in the diode channel is improved.
