ABSTRACT
Tin oxide quantum dots were synthesized in aqueous solution via a simple hydrolysis and oxidation process. The morphology observation showed that the quantum dots had an average grain size of 2.23 nm. The rutile phase SnO2 was confirmed by the structural and compositional characterization. The fluorescence spectroscopy of quantum dots was used to detect the heavy metal ions of Cd2+, Fe3+, Ni2+ and Pb2+, which caused the quenching effect of photoluminescence. The quantum dots showed the response of 2.48 to 100 ppm Ni2+. The prepared SnO2 quantum dots exhibited prospective in the detection of heavy metal ions in contaminated water, including deionized water, deionized water with Fe3+, reclaimed water and sea water. The limit of detection was as low as 0.01 ppm for Ni2+ detection. The first principle calculation based on the density function theory demonstrated the dependence of fluorescence response on the adsorption energy of heavy metal ions as well as ion radius. The mechanism of fluorescence response was discussed based on the interaction between Sn vacancies and Ni2+ ions. A linear correlation of fluorescence emission intensity against Ni2+ concentration was obtained in the logarithmic coordinates. The density of active Sn vacancies was the crucial factor that determined fluorescence response of SnO2 QDs to heavy metal ions.
ABSTRACT
Tin oxide quantum dots (QDs) were prepared in aqueous solution from the precursor of tin dichloride via a simple process of hydrolysis and oxidation. The average grain size of QDs was 1.9 nm. The hydrothermal treatment was used to control the average grain size, which increased to 2.7 and 4.0 nm when the operating temperatures of 125 and 225 °C were employed, respectively. The X-ray photoelectron spectroscopy (XPS) spectrum and X-ray diffraction analysis (XRD) pattern confirmed a rutile SnO2 system for the QDs. A band gap of 3.66 eV was evaluated from the UV-VIS absorption spectrum. A fluorescence emission peak was observed at a wavelength of 300 nm, and the response was quenched by the high concentration of QDs in the aqueous solution. The current-voltage (I-V) correlation inferred that grain boundaries had the electrical characteristics of the Schottky barrier. The response of the QD thin film to H2 gas revealed its potential application in semiconductor gas sensors.
