Investigation of Hafnium Thin Films for Design of TES Microcalorimeters.

Hafnium is a superconductor with a transition temperature slightly above 100 mK. This makes it attractive for such applications as microcalorimeters with high energy resolution. We report the superconducting properties of Hf films of thicknesses ranging from 60 to 115 nm, deposited on Si and Al2O3 substrates by electron beam evaporation. Besides that, we fabricated and measured combinations of hafnium with thin layers of normal metals, decreasing the critical temperature by the proximity effect. The critical temperature of the studied films varied from 56 to 302 mK. We have observed a significant change in the critical temperature of some films over time, which we propose to prevent by covering hafnium films with a thin layer of titanium.

Approaching microwave photon sensitivity with Al Josephson junctions.

Here, we experimentally test the applicability of an aluminium Josephson junction of a few micrometers size as a single photon counter in the microwave frequency range. We have measured the switching from the superconducting to the resistive state through the absorption of 10 GHz photons. The dependence of the switching probability on the signal power suggests that the switching is initiated by the simultaneous absorption of three and more photons, with a dark count time above 0.01 s.

Microwave photon detection by an Al Josephson junction.

An aluminium Josephson junction (JJ), with a critical current suppressed by a factor of three compared with the maximal value calculated from the gap, is experimentally investigated for application as a threshold detector for microwave photons. We present the preliminary results of measurements of the lifetime of the superconducting state and the probability of switching by a 9 GHz external signal. We found an anomalously large lifetime, not described by the Kramers' theory for the escape time over a barrier under the influence of fluctuations. We explain it by the phase diffusion regime, which is evident from the temperature dependence of the switching current histograms. Therefore, phase diffusion allows for a significant improvement of the noise immunity of a device, radically decreasing the dark count rate, but it will also decrease the single-photon sensitivity of the considered threshold detector. Quantization of the switching probability tilt as a function of the signal attenuation for various bias currents through the JJ is observed, which resembles the differentiation between N and N + 1 photon absorption.