Green-Light-Selective Organic Photodiodes with High Detectivity for CMOS Color Image Sensors.

Stacked structures employing wavelength-selective organic photodiodes (OPDs) have been studied as promising alternatives to the conventional Si-based image sensors because of their color constancy. Herein, novel donor (D)-π-acceptor (A) molecules are designed, synthesized, and characterized as green-light-selective absorbers for application in organic-on-Si hybrid complementary metal-oxide-semiconductor (CMOS) color image sensors. The p-type molecules, combined with two fused-type heterocyclic donors and an electron-accepting unit, exhibit cyanine-like properties that are characterized by intense and sharp absorption. This molecular design leads to improved absorption properties, thermal stability, and higher photoelectric conversion compared to those of a molecular design based on a nonfused ring. A maximum external quantum efficiency of 66% (λmax = 550 nm) and high specific detectivity (D*) of 8 × 1013 cm Hz1/2/W are achieved in an OPD consisting of a bulk heterojunction blend with two transparent electrodes on both sides. Finally, the green-light-detection capability of the narrow-band green-selective OPD is demonstrated by the optical simulation of an organic-on-Si hybrid, stacked-type, full-color photodetector comprising the green-light-selective OPD and a bottom Si photodiode with only blue and red color filters. Based on this molecular design, further optimization of the OPDs can allow the development of various optoelectronic sensors including 3D-stacked image sensors with enhanced sensitivities to replace the conventional Si-based CMOS image sensors.

Narrow-Band Organic Photodiodes for High-Resolution Imaging.

There are growing opportunities and demands for image sensors that produce higher-resolution images, even in low-light conditions. Increasing the light input areas through 3D architecture within the same pixel size can be an effective solution to address this issue. Organic photodiodes (OPDs) that possess wavelength selectivity can allow for advancements in this regard. Here, we report on novel push-pull D-π-A dyes specially designed for Gaussian-shaped, narrow-band absorption and the high photoelectric conversion. These p-type organic dyes work both as a color filter and as a source of photocurrents with linear and fast light responses, high sensitivity, and excellent stability, when combined with C60 to form bulk heterojunctions (BHJs). The effectiveness of the OPD composed of the active color filter was demonstrated by obtaining a full-color image using a camera that contained an organic/Si hybrid complementary metal-oxide-semiconductor (CMOS) color image sensor.

Organic-on-silicon complementary metal-oxide-semiconductor colour image sensors.

Complementary metal-oxide-semiconductor (CMOS) colour image sensors are representative examples of light-detection devices. To achieve extremely high resolutions, the pixel sizes of the CMOS image sensors must be reduced to less than a micron, which in turn significantly limits the number of photons that can be captured by each pixel using silicon (Si)-based technology (i.e., this reduction in pixel size results in a loss of sensitivity). Here, we demonstrate a novel and efficient method of increasing the sensitivity and resolution of the CMOS image sensors by superposing an organic photodiode (OPD) onto a CMOS circuit with Si photodiodes, which consequently doubles the light-input surface area of each pixel. To realise this concept, we developed organic semiconductor materials with absorption properties selective to green light and successfully fabricated highly efficient green-light-sensitive OPDs without colour filters. We found that such a top light-receiving OPD, which is selective to specific green wavelengths, demonstrates great potential when combined with a newly designed Si-based CMOS circuit containing only blue and red colour filters. To demonstrate the effectiveness of this state-of-the-art hybrid colour image sensor, we acquired a real full-colour image using a camera that contained the organic-on-Si hybrid CMOS colour image sensor.

A novel photochemical reaction of 2-alkoxynicotinates to cage-type photodimers.

Irradiation of a benzene solution of 2-alkoxynicotinic acid alkyl esters gave cage-type photodimers in good yields, the structure of which was established by X-ray single-crystal analysis. The maximum quantum yield was 8.0 x 10(-)(2) when a 5.0 M (almost neat) solution was used. Photolysis of phenyl 2-methoxynicotinate promoted photo-Fries rearrangement to give 1,3- and 1,5-rearranged products. Excimer emission of methyl 2-methoxynicotinate was observed at 77 K.