Picosecond pulse shaping of single photons using quantum dots.

Quantum dots (QDs) are an excellent single-photon source that can be combined with a spin quantum memory. Many quantum technologies require increased control over the characteristics of emitted photons. A powerful approach is to trigger coherent Raman photons from QDs with a Λ energy-level system, such as the spin singlet-triplet system in two coupled QDs. The temporal and spectral behavior of single Raman photons can be varied simply by modifying the excitation source. Here, we demonstrate control of the single-photon pulse shape in a solid-state system on a timescale much shorter than the radiative lifetime, in addition to control of the frequency and bandwidth. We achieve a photon pulse width of 80 ps-an order of magnitude shorter than the exciton lifetime. Possible applications include time-bin encoding of quantum information, matching photons from different sources, and efficient single-photon transfer in a quantum network.

Spin-Mechanical Coupling of an InAs Quantum Dot Embedded in a Mechanical Resonator.

We demonstrate strain-induced coupling between a hole spin in a quantum dot and mechanical motion of a cantilever. The optical transitions of quantum dots integrated into GaAs mechanical resonators are measured synchronously with the motion of the driven resonators. In a Voigt magnetic field, both electron and hole spin splittings are measured, showing negligible change for the electron spin but a large change for the hole spin of up to 36%. This large effect is attributed to the stronger spin orbit interaction of holes compared to electrons.

Probing the buried Pb/Si(111) interface with SPA LEED and STM on Si(111)-Pbα√3×√3.

High resolution spot profile analysis low energy electron diffraction (SPA-LEED) and variable temperature scanning tunneling microscopy (STM) have been used to observe the growth of Pb on the Pb/Si(111)-α√3×√3 phase, which is driven by quantum size effects (QSE). A change in the rotation of the Pb grown islands with respect to the Si substrate has been observed with increasing coverage θ. At lower coverage, separated two-step islands are grown and are aligned with the [110] axis of the substrate. With increasing coverage above 1.5 ML, of the islands coalesce and form a bilayer, with additional islands grown on top. The preferred Pb island orientation changes to 5.6° with respect to the [110] direction. These changes at the metal/semiconductor buried interface are obtained both with SPA LEED and STM as changes to the period of the Moire pattern. The method of analysis of the corrugation period and rotation angle of the Moire pattern measured with diffraction and STM can be applied to obtain the structure of buried metal/substrate interfaces in other epitaxial systems.

Low-temperature ultrafast mobility in systems with long-range repulsive interactions: Pb/Si(111).

A realization of the numerous phases predicted in systems with long-range repulsive interactions was recently found in Pb/Si(111). Surprisingly, these numerous phases can be grown at low temperatures approximately 40 K over macroscopic distances. This unusual observation can be explained from theoretical calculations of the collective diffusion coefficient D(c) in systems with long-range repulsive interactions. Instead of a gradual dependence of D(c) on coverage, it was found that D(c) has sharp maxima at low temperatures for every stable phase (i.e., for every rational value of the coverage theta=p/q) in agreement with the experiment.