Enhanced Spin Coherence of a Self-Assembled Quantum Dot Molecule at the Optimal Electrical Bias.

A pair of coupled dots with one electron in each dot can provide improvements in spin coherence, particularly at an electrical bias called the "sweet spot," but few measurements have been performed on self-assembled dots in this regime. Here, we directly measure the T_{2}^{*} coherence time of the singlet-triplet states in this system as a function of bias and magnetic field, obtaining a maximum T_{2}^{*} of 60 ns, more than an order of magnitude higher than an electron spin in a single quantum dot. Our results uncover two main dephasing mechanisms: electrical noise away from the sweet spot, and a magnetic field dependent interaction with nuclear spins due to a difference in g factors.

Coherent Population Trapping Combined with Cycling Transitions for Quantum Dot Hole Spins Using Triplet Trion States.

Optical spin rotations and cycling transitions for measurement are normally incompatible in quantum dots, presenting a fundamental problem for quantum information applications. Here we show that for a hole spin this problem can be addressed using a trion with one hole in an excited orbital, where strong spin-orbit interaction tilts the spin. Then, a particular trion triplet forms a double Λ system, even in a Faraday magnetic field, which we use to demonstrate fast hole spin initialization and coherent population trapping. The lowest trion transitions still strongly preserve spin, thus combining fast optical spin control with cycling transitions for spin readout.

A Spin-Photon Interface Using Charge-Tunable Quantum Dots Strongly Coupled to a Cavity.

Charged quantum dots containing an electron or hole spin are bright solid-state qubits suitable for quantum networks and distributed quantum computing. Incorporating such quantum dot spin into a photonic crystal cavity creates a strong spin-photon interface in which the spin can control a photon by modulating the cavity reflection coefficient. However, previous demonstrations of such spin-photon interfaces have relied on quantum dots that are charged randomly by nearby impurities, leading to instability in the charge state, which causes poor contrast in the cavity reflectivity. Here we demonstrate a strong spin-photon interface using a quantum dot that is charged deterministically with a diode structure. By incorporating this actively charged quantum dot in a photonic crystal cavity, we achieve strong coupling between the cavity mode and the negatively charged state of the dot. Furthermore, by initializing the spin through optical pumping, we show strong spin-dependent modulation of the cavity reflectivity, corresponding to a cooperativity of 12. This spin-dependent reflectivity is important for mediating entanglement between spins using photons, as well as generating strong photon-photon interactions for applications in quantum networking and distributed quantum computing.

Tunable Coupling of a Double Quantum Dot Spin System to a Mechanical Resonator.

The interaction of quantum systems with mechanical resonators is of practical interest for applications in quantum information and sensing and also of fundamental interest as hybrid quantum systems. Achieving a large and tunable interaction strength is of great importance in this field as it enables controlled access to the quantum limit of motion and coherent interactions between different quantum systems. This has been challenging with solid state spins, where typically the coupling is weak and cannot be tuned. Here we use pairs of coupled quantum dots embedded within cantilevers to achieve a high coupling strength of the singlet-triplet spin system to mechanical motion through strain. Two methods of achieving strong, tunable coupling are demonstrated. The first is through different strain-induced energy shifts for the two QDs when the cantilever vibrates, resulting in changes to the exchange interaction. The second is through a laser-driven AC Stark shift that is sensitive to strain-induced shifts of the optical transitions. Both of these mechanisms can be tuned to zero with electrical bias or laser power, respectively, and give large spin-mechanical coupling strengths.

Imaging Atomic-Scale Clustering in III-V Semiconductor Alloys.

Quaternary alloys are essential for the development of high-performance optoelectronic devices. However, immiscibility of the constituent elements can make these materials vulnerable to phase segregation, which degrades the optical and electrical properties of the solid. High-efficiency III-V photovoltaic cells are particularly sensitive to this degradation. InAlAsSb lattice matched to InP is a promising candidate material for high-bandgap subcells of a multijunction photovoltaic device. However, previous studies of this material have identified characteristic signatures of compositional variation, including anomalous low-energy photoluminescence. In this work, atomic-scale clustering is observed in InAlAsSb via quantitative scanning transmission electron microscopy. Image quantification of atomic column intensity ratios enables the comparison with simulated images, confirming the presence of nonrandom compositional variation in this multispecies alloy.

Leveraging crystal anisotropy for deterministic growth of InAs quantum dots with narrow optical linewidths.

Crystal growth anisotropy in molecular beam epitaxy usually prevents deterministic nucleation of individual quantum dots when a thick GaAs buffer is grown over a nanopatterned substrate. Here, we demonstrate how this anisotropy can actually be used to mold nucleation sites for single dots on a much thicker buffer than has been achieved by conventional techniques. This approach greatly suppresses the problem of defect-induced line broadening for single quantum dots in a charge-tunable device, giving state-of-the-art optical linewidths for a system widely studied as a spin qubit for quantum information.

Nanoscale tunable reduction of graphene oxide for graphene electronics.

The reduced form of graphene oxide (GO) is an attractive alternative to graphene for producing large-scale flexible conductors and for creating devices that require an electronic gap. We report on a means to tune the topographical and electrical properties of reduced GO (rGO) with nanoscopic resolution by local thermal reduction of GO with a heated atomic force microscope tip. The rGO regions are up to four orders of magnitude more conductive than pristine GO. No sign of tip wear or sample tearing was observed. Variably conductive nanoribbons with dimensions down to 12 nanometers could be produced in oxidized epitaxial graphene films in a single step that is clean, rapid, and reliable.

Three-dimensional control of self-assembled quantum dot configurations.

We demonstrate techniques for growing three-dimensional quantum dot configurations using molecular beam epitaxy on faceted template islands. Molecular beam shadowing leads to new geometries through selective nucleation of the dots on the template edges. Strain-induced stacking converts the planar configurations into three-dimensional structures. The resulting dot morphologies and their configurational uniformity are studied using cross sectional scanning tunneling microscopy and atomic force microscopy. Combining photoluminescence measurements with structural characterization allows interpretation of the ensemble photoluminescence spectrum. Bright spectra for the three-dimensional structures suggest an improved method for combining lithographic nucleation sites with self-assembled dot growth. These techniques can be applied to lithographic templates to fabricate complex quantum dot networks.

Conductance anisotropy in epitaxial graphene sheets generated by substrate interactions.

We present the first microscopic transport study of epitaxial graphene on SiC using an ultrahigh vacuum four-probe scanning tunneling microscope. Anisotropic conductivity is observed that is caused by the interaction between the graphene and the underlying substrate. These results can be explained by a model where charge buildup at the step edges leads to local scattering of charge carriers. This highlights the importance of considering substrate effects in proposed devices that utilize nanoscale patterning of graphene on electrically isolated substrates.