Grazing-Incidence La/B-Based Multilayer Mirrors for 6.x nm Wavelength.

We studied a possibility of fabricating LaN/B grazing incidence multilayer mirrors for 6.x nm radiation at a relatively large angle of incidence (AOI = 77° off-normal). LaN/B multilayers with a periodicity of 15 nm were successfully fabricated. But when stored in air for one week they showed strong deterioration of the surface due to oxidation of the topmost LaN layers, even though the multilayer was capped with a thin B film. In a series of experiments with variable LaN thickness it was found that the B protective properties depend on the thickness of the underlying LaN layer. Based on these experiments a 15 nm LaN/La/B multilayer with a passivation layer of only 0.4 nm of LaN was fabricated, which did not show any deterioration of the surface within a testing period of half a year. An initial reflectivity of 74.5% at ≈6.66 nm, AOI = 77° off-normal was achieved, which was reduced by 0.5% absolute in half a year, due to contamination of the top B layer.

Angular and Spectral Bandwidth of Extreme UV Multilayers Near Spacer Material Absorption Edges.

High resolution imaging systems for EUV range are based on multilayer optics. Current generation of EUV lithography uses broadband Sn LPP sources, which requires broadband mirrors to fully utilize the source power. On the other hand, there always remains a possibility to use FEL or synchrotron as EUV source. FEL can produce very bright narrowband EUV light of a tunable wavelength, and the spectral bandwidth of the mirror is no longer a restriction. In this paper we look at the consequences of switching to different wavelengths if FEL source is used. For instance, it is known that the reflectance of Mo/Si multilayers increases when approaching Si L-edge, and the spectral bandwidth drops. But the behavior of an angular bandwidth (and its relation with the spectral bandwidth) is usually left out. It is also sometimes assumed that these bandwidths are correlated. For a large aperture EUV optical system with diffraction-limited resolution angular acceptance of a mirror is also a very important parameter. We show that the angular bandwidth of several multilayer systems (Mo/Si, Mo/Be, Ru/Si, Ru/B, La/B) actually increases close to spacer absorption edges, opposite to what occurs with the spectral bandwidth. We study this effect and show that it is caused by an interplay of changing optical constants of respective materials used in these multilayer combinations. We also provide an experimental check of the angular bandwidth of Mo/Si multilayers at 13.5 and 12.6 nm, which confirms our calculations.

High-reflectance La/B-based multilayer mirror for 6.x nm wavelength.

We report a hybrid thin-film deposition procedure to significantly enhance the reflectivity of La/B-based multilayer structures. This is of relevance for applications of multilayer optics at 6.7-nm wavelength and beyond. Such multilayers showed a reflectance of 64.1% at 6.65 nm measured at 1.5-degrees off-normal incidence at PTB (BESSY-II). This was achieved by a special scheme of La passivation. The La layer was nitridated to avoid formation of the optically unfavorable LaBx compound at the B-on-La interface. To avoid the also undesired BN formation at the La-on-B interface, a time-dosed nitridation at the initial stage was applied. This research revealed a good potential for further increase in the reflectivity of multilayer structures at 6.7 nm.

Wideband multilayer mirrors with minimal layer thicknesses variation.

Wideband multilayers designed for various applications in hard X-ray to Extreme UV spectral regions are based on a layered system with layer thicknesses varying largely in depth. However, because the internal structure of a thin film depends on its thickness, this will result in multilayers in which material properties such as density, crystallinity, dielectric constant and effective thickness vary from layer to layer. This variation causes the fabricated multilayers to deviate from the model and negatively influences the reflectivity of the multilayers. In this work we solve this problem by developing designs of wideband multilayers with strongly reduced layer thickness variations in depth, without essential degradation of their optical characteristics.

Subwavelength single layer absorption resonance antireflection coatings.

We present theoretically derived design rules for an absorbing resonance antireflection coating for the spectral range of 100 - 400 nm, applied here on top of a molybdenum-silicon multilayer mirror (Mo/Si MLM) as commonly used in extreme ultraviolet lithography. The design rules for optimal suppression are found to be strongly dependent on the thickness and optical constants of the coating. For wavelengths below λ ∼ 230 nm, absorbing thin films can be used to generate an additional phase shift and complement the propagational phase shift, enabling full suppression already with film thicknesses far below the quarter-wave limit. Above λ ∼ 230 nm, minimal absorption (k < 0.2) is necessary for low reflectance and the minimum required layer thickness increases with increasing wavelength slowly converging towards the quarter-wave limit.As a proof of principle, SixCyNz thin films were deposited that exhibit optical constants close to the design rules for suppression around 285 nm. The thin films were deposited by electron beam co-deposition of silicon and carbon, with N+ ion implantation during growth and analyzed with variable angle spectroscopic ellipsometry to characterize the optical constants. We report a reduction of reflectance at λ = 285 nm, from 58% to 0.3% for a Mo/Si MLM coated with a 20 nm thin film of Si0.52C0.16N0.29.

Infrared diffractive filtering for extreme ultraviolet multilayer Bragg reflectors.

We report on the development of a hybrid mirror realized by integrating an EUV-reflecting multilayer coating with a lamellar grating substrate. This hybrid mirror acts as an efficient Bragg reflector for extreme ultraviolet (EUV) radiation at a given wavelength while simultaneously providing spectral-selective suppression of the specular reflectance for unwanted longer-wavelength radiation due to the grating phase-shift resonance. The test structures, designed to suppress infrared (IR) radiation, were fabricated by masked deposition of a Si grating substrate followed by coating of the grating with a Mo/Si multilayer. To give the proof of principle, we developed such a hybrid mirror for the specific case of reflecting 13.5 nm radiation while suppressing 10 µm light, resulting in 61% reflectance at the wavelength of 13.5 nm together with the 70 × suppression rate of the specular reflection at the wavelength of 10 µm, but the considered filtering principle can be used for a variety of applications that are based on utilization of broadband radiation sources.

Infrared antireflective filtering for extreme ultraviolet multilayer Bragg reflectors.

An extreme ultraviolet multilayer mirror with an integrated spectral filter for the IR range is presented and experimentally evaluated. The system consists of an IR-transparent B4C/Si multilayer stack which is used both as EUV-reflective coating and as a phase shift layer of the resonant IR antireflective (AR) coating. The AR coating is optimized in our particular case to suppress CO2 laser radiation at a wavelength of 10.6 µm, and a suppression of more than two orders of magnitude is demonstrated. The method allows high suppression over a large angular acceptance range, relevant for application in lithography systems.

Infrared suppression by hybrid EUV multilayer--IR etalon structures.

We have developed a multilayer mirror for extreme UV (EUV) radiation (13.5 nm), which has near-zero reflectance for IR line radiation (10.6 µm). The EUV reflecting multilayer is based on alternating B4C and Si layers. Substantial transparency of these materials with respect to the IR radiation allowed the integration of the multilayer coating in a resonant quarter-wave structure for 10.6 µm. Samples were manufactured using magnetron sputtering deposition technique and demonstrated suppression of the IR radiation by up to 3 orders of magnitude. The EUV peak reflectance amounts 45% at 13.5 nm, with a bandwidth at FWHM being 0.284 nm. Therefore such a mirror could replace conventional multilayer mirrors to suppress undesired spectral components in monochromatic imaging applications, including EUV photolithography.

Properties of broadband depth-graded multilayer mirrors for EUV optical systems.

The optical properties of a-periodic, depth-graded multilayer mirrors operating at 13.5 nm wavelength are investigated using different compositions and designs to provide a constant reflectivity over an essentially wider angular range than periodic multilayers. A reflectivity of up to about 60% is achieved in these calculation in the [0, 18 degrees] range of the angle of incidence for the structures without roughness. The effects of different physical and technological factors (interfacial roughness, natural interlayers, number of bi-layers, minimum layer thickness, inaccuracy of optical constants, and thickness errors) are discussed. The results from an experiment on the fabrication of a depth-graded Mo/Si multilayer mirror with a wide angular bandpass in the [0, 16 degrees] range are presented and analyzed.

Spectral-purity-enhancing layer for multilayer mirrors.

We demonstrate, both theoretically and experimentally, that special spectral-purity-enhancing multilayer mirror systems can be designed and fabricated to substantially reduce the level of out-of-band radiation expected in an extreme ultraviolet lithographic tool. A first proof of principle of applying such spectral-purity-enhancement layers showed reduced out-of-band reflectance by a factor of five, while the in-band reflectance is only 4.5% (absolute) less than for a standard capped multilayer.

Graded X-ray Optics for Synchrotron Radiation Applications.

Using X-ray diffractometry and spectral measurements, the structure and properties of graded X-ray optical elements have been examined. Experimental and theoretical data on X-ray supermirrors, which were prepared by the magnetron sputtering technique using precise thickness control, are reported. Measurements on graded aperiodic Si(1-x)Ge(x) single crystals, which were grown by the Czochralski technique, are also presented. The lattice parameter of such a crystal changes almost linearly with increasing Ge concentration. The measurements indicate that Si(1-x)Ge(x) crystals with concentrations up to 7 at.% Ge can be grown with a quality comparable to that of pure Si crystals.