Modeling of nanohole siliconpin/nipphotodetectors: Steady state and transient characteristics.

Theory is proposed for nanohole siliconpin/nipphotodetector (PD) physics, promising devices in the future data communications and lidar applications. Photons and carriers have wavelengths of 1µm and 5 nm, respectively. We propose vertical nanoholes having 2D periodicity with a feature size of 1µm will produce photons slower than those in bulk silicon, but carriers are unchanged. Close comparison to experiments validates this view. First, we study steady state nanohole PD current as a function of illumination power, and results are attributed to the voltage drop partitions in the PD and electrodes. Nanohole PD voltage drop depends on illumination, but series resistance voltage drop does not, and this explains experiments well. Next, we study transient characteristics for the sudden termination of light illumination. Nanohole PDs are much faster than flat PDs, and this is because the former produces much less slow diffusion minority carriers. In fact, most photons have already been absorbed in thei-layer in nanohole PDs, resulting in much less diffusion minority carriers at the bottom highly doped layer. Why diffusion in PDs is slow and that in bipolar junction transistors is quick is discussed in appendix.

Electron-beam and ion-beam-induced deposited tungsten contacts for carbon nanofiber interconnects.

Ion-beam-induced deposition (IBID) and electron-beam-induced deposition (EBID) with tungsten (W) are evaluated for engineering electrical contacts with carbon nanofibers (CNFs). While a different tungsten-containing precursor gas is utilized for each technique, the resulting tungsten deposits result in significant contact resistance reduction. The performance of CNF devices with W contacts is examined and conduction across these contacts is analyzed. IBID-W, while yielding lower contact resistance than EBID-W, can be problematic in the presence of on-chip semiconducting devices, whereas EBID-W provides substantial contact resistance reduction that can be further improved by current stressing. Significant differences between IBID-W and EBID-W are observed at the electrode contact interfaces using high-resolution transmission electron microscopy. These differences are consistent with the observed electrical behaviors of their respective test devices.

Carbon nanofiber interconnect RF characteristics improvement with deposited tungsten contacts.

Carbon nanotubes (CNTs) and carbon nanofibers (CNFs) are potential materials for high-performance electronic devices and circuits due to their light weight and excellent electrical properties such as high current capacity and tolerance to electromigration. In addition, at high frequencies, these materials exhibit transport behavior which holds special promise for applications as on-chip interconnects. Contact resistance at CNF-metal interface is a major factor in limiting the electrical performance of CNF interconnects at all frequencies. In this paper, it is demonstrated that the contact resistance can be minimized and the high-frequency characteristics much enhanced by depositing tungsten on CNF-metal electrode contacts.

Modeling of a carbon nanotube ultracapacitor.

The modeling of carbon nanotube ultracapacitor (CNU) performance based on the simulation of electrolyte ion motion between the cathode and the anode is described. Using a molecular dynamics (MD) approach, the equilibrium positions of the electrode charges interacting through the Coulomb potential are determined, which in turn yield the equipotential surface and electric field associated with the capacitor. With an applied ac voltage, the current is computed based on the nanotube and electrolyte particle distribution and interaction, resulting in the frequency-dependent impedance Z(ω). From the current and impedance profiles, the Nyquist and cyclic voltammetry (CV) plots are then extracted. The results of these calculations compare well with existing experimental data. A lumped-element equivalent circuit for the CNU is proposed and the impedance computed from this circuit correlates well with the simulated and measured impedances.

Room-temperature Coulomb staircase in semiconducting InP nanowires modulated with light illumination.

Detailed electron transport analysis is performed for an ensemble of conical indium phosphide nanowires bridging two hydrogenated n(+)-silicon electrodes. The current-voltage (I-V) characteristics exhibit a Coulomb staircase in the dark with a period of ∼ 1 V at room temperature. The staircase is found to disappear under light illumination. This observation can be explained by assuming the presence of a tiny Coulomb island, and its existence is possible due to the large surface depletion region created within contributing nanowires. Electrons tunnel in and out of the Coulomb island, resulting in the Coulomb staircase I-V. Applying light illumination raises the electron quasi-Fermi level and the tunneling barriers are buried, causing the Coulomb staircase to disappear.

Temperature dependence of carbon nanofiber resistance.

Transport properties under current stress are examined for a carbon nanofiber (CNF) on an insulating substrate between tungsten-deposited gold electrodes. The temperature dependence of CNF resistance is determined based on our previously reported heat transport model. The measured devices exhibit a thermal activation behavior, suggesting transport in a disordered medium. The extracted activation energies fall within the 22-35 meV range.

Competing classical and quantum effects in shape relaxation of a metallic island.

Pb islands grown on a Si substrate transform at room temperature from a flattop facet geometry into an unusual ring shape. The volume-preserving mass transport is catalyzed by the electrical field from the tip of a scanning tunneling microscope. The ring morphology results from the competing classical and quantum effects in the shape relaxation. The latter is enhanced by the large anisotropy of the effective mass, and leads to a sequential strip-flow growth on alternating strips of the same facet defined by substrate steps, showing its dynamical impact on the stability of a nanostructure.