ABSTRACT
The resemblance between electrons and optical waves has strongly driven the advancement of mesoscopic physics, evidenced by the widespread use of terms such as fermion or electron optics. However, electron waves have yet to be understood in open cavity structures which have provided contemporary optics with rich insight towards non-Hermitian systems and complex interactions between resonance modes. Here, we report the realization of an open cavity resonator in a two-dimensional electronic system. We studied the resonant electron modes within the cavity and resolved the signatures of longitudinal and transverse quantization, showing that the modes are robust despite the cavity being highly coupled to the open background continuum. The transverse modes were investigated by applying a controlled deformation to the cavity, and their spatial distributions were further analyzed using magnetoconductance measurements and numerical simulation. These results lay the groundwork to exploring matter waves in the context of modern optical frameworks.
ABSTRACT
We report on the characterization of the thermoelectric properties of Bi2Se3 epifilms. MBE-grown Bi2Se3 films on GaAs (111) A are nanomachined with integrated Pt elements serving as local joule heaters, thermometers, and voltage probes. We suspended a 4 µm × 120 µm Bi2Se3 by nanomachining techniques. Specifically, we selectively etched GaAs buffer/substrate layers by citric acid solution followed by a critical point drying method. We found that the self-heating 3ω method is an appropriate technique for the accurate measurement of the thermal conductivity of suspended Bi2Se3. The measured thermoelectric properties of 200 nm thick Bi2Se3 at room temperature were κ=1.95 W/m K, S=−102.8 µV/K, σ = 75,581 S/m and the figure of merit was ZT=0.12. The study introduces a method to measure thermal conductivity accurately by suspending thin films.
ABSTRACT
Strain perturbs atomic ordering in solids, with far-reaching consequences from an increased carrier mobility to localization in Si, stabilization of electric dipoles and nanomechanical transistor action in oxides, to the manipulation of spins without applying magnetic fields in n-GaAs. In GaMnAs, a carrier-mediated ferromagnetic semiconductor, relativistic spin-orbit interactions - highly strain-dependent magnetic interactions - play a crucial role in determining the magnetic anisotropy (MA) and anisotropic magnetoresistance (AMR). Strain modifies the MA and AMR in a nanomachined GaMnAs structure as measured by the anomalous Hall effect (AHE) and the planar Hall effect (PHE). Here, we report an MA modification by strain relaxation in an isolated GaMnAs Hall bar structure and by applying a range of local strains via fabricating asymmetrically mechanically buckled GaMnAs micro-Hall bar structures. In the AHE and PHE measurements, we observe a reduction in the in-plane MA and an enhancement in the out-of-plane MA as the compressive strain due to the lattice mismatch relaxes in the suspended structure. The functionality of such mechanical manipulation, as well as the two-level mechanical state and the corresponding AHE responses, is demonstrated by a fully scalable binary mechanical memory element in a GaMnAs single Hall cross structure.
ABSTRACT
We report on the realization of free-standing GaMnAs epilayer sheets using nanomachining techniques. By optimizing the growth conditions of the sacrificial Al0.75Ga0.25As layer, free-standing metallic GaMnAs (with ~6% Mn) microsheets (with TC ~85 K) with integrated electrical probes are realized for magnetotransport measurements in the van der Pauw geometry. GaMnAs epilayer needs to be physically isolated to avoid buckling effects stemming from the release of lattice mismatch strain during the removal of the AlGaAs sacrificial layer. From finite element analysis, symmetrically placed and serpentine-shaped electrical leads induce minimal thermal stress at low temperatures. From magnetotransport measurements, changes in magnetic anisotropy are readily observed.
