Broadband GaAsSb Nanowire Array Photodetectors for Filter-Free Multispectral Imaging.

Highly compact, filter-free multispectral photodetectors have important applications in biological imaging, face recognition, and remote sensing. In this work, we demonstrate room-temperature wavelength-selective multipixel photodetectors based on GaAs0.94Sb0.06 nanowire arrays grown by metalorganic vapor phase epitaxy, providing more than 10 light detection channels covering both visible and near-infrared ranges without using any optical filters. The nanowire array geometry-related tunable spectral photoresponse has been demonstrated both theoretically and experimentally and shown to be originated from the strong and tunable resonance modes that are supported in the GaAsSb array nanowires. High responsivity and detectivity (up to 44.9 A/W and 1.2 × 1012 cm √Hz/W at 1 V, respectively) were obtained from the array photodetectors, enabling high-resolution RGB color imaging by applying such a nanowire array based single pixel imager. The results indicate that our filter-free wavelength-selective GaAsSb nanowire array photodetectors are promising candidates for the development of future high-quality multispectral imagers.

New Analytical Method for Measuring the Atomic Weight of Neon Using Gas Chromatography with a Thermal Conductivity Detector.

The atomic weights of neon (Ne) gases were measured by gas chromatography with a thermal conductivity detector (GC-TCD). High-purity neon gas was used as the carrier and sample gases in this study, which is different from typical GC analysis. The peak signals from the GC-TCD appear when the thermal conductivity between the sample and carrier gases is different. In most gaseous molecules, the thermal conductivity has been assumed to be the same if the chemical species is the same. However, the thermal conductivity of neon gases shows different values among several manufacturers, because the relative abundance of the 22Ne isotope, which is quite large (∼10% in atmospheric neon), varies due to the mass fractionation during air separation. We identified the atomic weights of seven neon gases. Additionally, the absolute isotope ratios of all neon gases were measured using a magnetic sector type gas/mass spectrometer. The atomic weights of the seven neon gases were compared with the results obtained from GC-TCD, and the results agreed with each other within the expanded uncertainty (k = 2).

Monocrystalline InP Thin Films with Tunable Surface Morphology and Energy Band gap.

InP is currently being used in various (opto)electronic and energy device applications. However, the high cost of InP substrates and associated epitaxial growth techniques has been huge impediments for its widespread use. Here, large-area monocrystalline InP thin films are demonstrated via a convenient cracking method, and the InP thin films show material properties identical to their bulk counterparts. Furthermore, the same substrate can be reused for the production of additional InP thin films. This cracking technique is also shown to be a versatile tool to form an ultrasmooth surface or a microscale periodic triangular grating structure on the surface, depending on the orientation of the donor substrate used. Strain-induced band gap energy shift is also observed in localized regions of the thin film with a grating structure. The simplicity of this technique, which does not require any sophisticated equipment and complex fabrication process, is promising to reduce the cost of InP thin-film devices.

In situ passivation of GaAsSb nanowires for enhanced infrared photoresponse.

Surface passivation of semiconductor nanowires (NWs) is important for their optoelectronic properties and applications. Here, the in situ passivation effect of an epitaxial InP shell and the corresponding photodetector performance is experimentally studied. Compared with the unpassivated GaAs1- x Sb x core-only NWs, the GaAs1- x Sb x /InP core/shell NWs have shown much stronger photoluminescence and cathodoluminescence intensities. Correspondingly, the fabricated single GaAs1- x Sb x /InP core/shell NW photodetector shows a responsivity of 325.1 A W-1 (@ 1.3 µm and 1.5 V) that is significantly enhanced compared to that of single GaAs1- x Sb x core-only NW photodetectors (143.5 A W-1), with a comparable detectivity of 4.7 × 1010 and 5.3 × 1010 cm√Hz/W, respectively. This is ascribed to the enhanced carrier mobility and carrier concentration by the in situ passivation, which lead to both higher photoconductivity and dark-conductivity. Our results show that in situ passivation is an effective approach for performance enhancement of GaAs1-x Sb x NW based optoelectronic devices.

Engineering III-V Semiconductor Nanowires for Device Applications.

III-V semiconductor nanowires offer potential new device applications because of the unique properties associated with their 1D geometry and the ability to create quantum wells and other heterostructures with a radial and an axial geometry. Here, an overview of challenges in the bottom-up approaches for nanowire synthesis using catalyst and catalyst-free methods and the growth of axial and radial heterostructures is given. The work on nanowire devices such as lasers, light emitting nanowires, and solar cells and an overview of the top-down approaches for water splitting technologies is reviewed. The authors conclude with an analysis of the research field and the future research directions.

Multiwavelength Single Nanowire InGaAs/InP Quantum Well Light-Emitting Diodes.

We report multiwavelength single InGaAs/InP quantum well nanowire light-emitting diodes grown by metal organic chemical vapor deposition using selective area epitaxy technique and reveal the complex origins of their electroluminescence properties. We observe that the single InGaAs/InP quantum well embedded in the nanowire consists of three components with different chemical compositions, axial quantum well, ring quantum well, and radial quantum well, leading to the electroluminescence emission with multiple wavelengths. The electroluminescence measurements show a strong dependence on current injection levels as well as temperatures and these are explained by interpreting the equivalent circuits in a minimized area of the device. It is also found that the electroluminescence properties are closely related to the distinctive triangular morphology with an inclined facet of the quantum well nanowire. Our study provides important new insights for further design, growth, and fabrication of high-performance quantum well-based nanowire light sources for a wide range of future optoelectronic and photonic applications.

Radial Growth Evolution of InGaAs/InP Multi-Quantum-Well Nanowires Grown by Selective-Area Metal Organic Vapor-Phase Epitaxy.

III-V semiconductor multi-quantum-well nanowires (MQW NWs) via selective-area epitaxy (SAE) is of great importance for the development of nanoscale light-emitting devices for applications such as optical communication, silicon photonics, and quantum computing. To achieve highly efficient light-emitting devices, not only the high-quality materials but also a deep understanding of their growth mechanisms and material properties (structural, optical, and electrical) are extremely critical. In particular, the three-dimensional growth mechanism of MQWs embedded in a NW structure by SAE is expected to be different from that of those grown in a planar structure or with a catalyst and has not yet been thoroughly investigated. In this work, we reveal a distinctive radial growth evolution of InGaAs/InP MQW NWs grown by the SAE metal organic vapor-phase epitaxy (MOVPE) technique. We observe the formation of zinc blende (ZB) QW discs induced by the axial InGaAs QW growth on the wurtzite (WZ) base-InP NW and propose it as the key factor driving the overall structure of radial growth. The role of the ZB-to-WZ change in the driving of the overall growth evolution is supported by a growth formalism, taking into account the formation-energy difference between different facets. Despite a polytypic crystal structure with mixed ZB and WZ phases across the MQW region, the NWs exhibit high uniformity and desirable QW spatial layout with bright room-temperature photoluminescence at an optical communication wavelength of ∼1.3 µm, which is promising for the future development of high-efficiency light-emitting devices.

Frequency analysis of a step dynamic pressure calibrator.

A dynamic high pressure standard is becoming more essential in the fields of mobile engines, space science, and especially the area of defense such as long-range missile development. However, a complication arises when a dynamic high pressure sensor is compared with a reference dynamic pressure gauge calibrated in static mode. Also, it is difficult to determine a reference dynamic pressure signal from the calibrator because a dynamic high pressure calibrator generates unnecessary oscillations in a positive-going pressure step method. A dynamic high pressure calibrator, using a quick-opening ball valve, generates a fast step pressure change within 1 ms; however, the calibrator also generates a big impulse force that can lead to a short life-time of the system and to oscillating characteristics in response to the dynamic sensor to be calibrated. In this paper, unnecessary additional resonant frequencies besides those of the step function are characterized using frequency analysis. Accordingly, the main sources of resonance are described. In order to remove unnecessary frequencies, the post processing results, obtained by a filter, are given; also, a method for the modification of the dynamic calibration system is proposed.

The Emergence of Oseltamivir-Resistant Seasonal Influenza A (H1N1) Virus in Korea During the 2008-2009 Season.

OBJECTIVES: To monitor antiviral drug resistance among seasonal influenza viruses isolated in Korea during the 2008-2009 influenza season, we examined influenza isolates collected through Korea Influenza Surveillance Scheme for antiviral drug susceptibility. METHODS: For genetic analysis of antiviral drug resistance, the matrix (M2) and neuraminidase (NA) genes of each isolate were amplified by reverse transcription-polymerase chain reaction and followed by nucleotide sequencing. For phylogenetic analyses, the sequences of hemagglutinin (HA) and NA genes of each isolate were aligned using multiple alignment program. For phenotypic analysis of antiviral drug resistance, drug susceptibilities against M2 inhibitor (amantadine) and NA inhibitors (oseltavimir and zanamivir) were determined by virus yield reduction assay and fluorometric NA inhibition assay, respectively. RESULTS: In Korea, the resistant influenza viruses against oseltamivir were first detected in sealsonal influenza A(H1N1) viruses on Week 48 of 2008. Since then, the number of oseltamivir-resistant A(H1N1) viruses was continuously increased and had reached the highest peak on Week 52 of 2008. 533 (99.8%) of 534 A(H1N1) viruses were resistant to oseltamivir and all of them harbored the H275Y mutation in the NA gene during the 2008-2009 season. The oseltamivir resistance identified by sequencing was confirmed by NA inhibition assay. Genetic analysis based on HA gene of the resistant A(H1N1) viruses revealed that the viruses were identified as A/Brisbane/10/2007-like strain which was vaccine strain for the 2008-2009 season. CONCLUSIONS: The oseltamivir-resistant A(H1N1) viruses were first emerged in Europe in November 2007 and then circulated globally. One year later, the oseltamivir-resistant A(H1N1) viruses were first detected in Korea in November 2008 and continued circulating until the Week 7 of 2009 during the 2008-2009 season. Considering the pandemic preparedness, it should be continued to monitor the emergence and the characterization of antiviral drug resistant influenza viruses.

Tertiary dentin formation after direct pulp capping with odontogenic ameloblast-associated protein in rat teeth.

INTRODUCTION: Odontogenic ameloblast-associated protein (ODAM) has been shown to be specifically expressed in ameloblasts and odontoblasts and has been suggested to play a role in the mineralization of the enamel, possibly through the regulation of matrix metalloproteinase 20. However, its function in dentin is not clear. The purpose of this study was to evaluate the effect of ODAM on tertiary dentin formation. METHODS: MDPC-23 odontoblastic cells were cultured, and the effect of recombinant ODAM (rODAM) on mineralized nodule formation was evaluated. Pinpoint pulp exposures were made in rat teeth and then capped with rODAM mixed with a carrier (rODAM group), carrier only (Carrier group), or white mineral trioxide aggregate (WMTA group). After 1, 2, and 4 weeks, odontoblasts and tertiary dentin were investigated histologically and immunohistochemically. RESULTS: Nodule formation in MDPC-23 cells was enhanced by rODAM treatment. Odontoblasts were polarized and showed a palisade arrangement in the remaining pulp from the rODAM group, but not the Carrier or WMTA groups. In the WMTA group, extensive tertiary dentin along the entire pulp-dentin border obliterated the pulp chamber. In contrast, in the rODAM group, limited reaction of odontoblasts resulted in normal pulp tissue appearance without excessive tertiary dentin formation and obliteration of the pulp cavity. In the Carrier and WMTA groups, bone sialoprotein was immunostained in most of the tertiary dentin, whereas in the rODAM group, dentin sialoprotein expression was immunostained primarily in newly formed reactionary dentin. CONCLUSIONS: These results suggest that rODAM accelerates reactionary dentin formation close to the pulp exposure area, thereby preserving normal odontoblasts in the remaining pulp.

Amantadine-resistant influenza A viruses isolated in South Korea from 2003 to 2009.

To investigate the frequency of amantadine resistance among influenza A viruses isolated in Korea during the 2003-2009 seasons, 369 (16.8%) 2199 A/H1N1 viruses and 780 (14.8%) of 5263 A/H3N2 viruses were randomly selected. The M2 and HA1 genes of each isolate were amplified by reverse transcription-polymerase chain reaction and followed by nucleotide sequencing. The results showed that the resistance rate to amantadine among A/H1N1 viruses increased significantly from 2004-2005 (33.3%) to 2007-2008 (97.8%) and then decreased dramatically in 2008-2009 (1.9%). The A/H1N1 isolates recently detected in 2008-2009 turned amantadine-sensitive containing two new substitutions at specific sites (S141N, G185A) in HA1. Compared with A/H1N1 viruses, the amantadine resistance among the A/H3N2 viruses increased from 2003-2004 (9.7%) to 2005-2006 (96.7%) and decreased in 2006-2007 (57.4%). During 2006-2007, both of amantadine-resistant and -sensitive A/H3N2 viruses co-circulated but clustered in different branches phylogenetically. All of A/H3N2 isolates tested during 2007-2009 appeared to cluster in the same group being resistant to amantadine.