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1.
Sci Rep ; 13(1): 20151, 2023 Nov 17.
Article in English | MEDLINE | ID: mdl-37978213

ABSTRACT

The breach risk of reservoir dam exists objectively while exerting benefits. There is great uncertainty in the overtopping breach process of embankment dam and the dam break flood routing which affects the accuracy of dam risk analysis and may cause unnecessary waste in emergency scheduling. However, the uncertainty analysis of the breach process and its consequence is currently inadequate. Therefore, a stratified sampling Monte Carlo method is proposed to simulate uncertain overtopping breach flood of embankment dams. The main sources of uncertainty are analyzed and determined as uncertain dam breach and flood routing processes. The uncertain breach process of dam is studied by presenting a sensitive study between 3 mechanism breach models and 5 parametric breach models. The random dam breach process is restored using HEC-RAS semi-empirical breach model by estimating breach characteristics through multiple common breach models. The random flood routing is carried out through 1D-2D coupled unsteady flow analysis in which the random breach process is adopted as an upper inflow boundary condition. According to the case study results, though parameters have been controlled in a limited range, the flood routing results in the early stage of dam overtopping failure present greater uncertainty. As the flood progresses further downstream, the uncertainty will gradually decrease. This study could serve as a reference for dam breach risk map making.

2.
Sci Rep ; 13(1): 19175, 2023 Nov 06.
Article in English | MEDLINE | ID: mdl-37932338

ABSTRACT

The damming materials will be deteriorated during the long-term service of concrete arch dam by weathering, seepage dissolution, freeze-thaw and other factors which will put dams at potential risk. However, there are few researches on the reliability assessment of arch dams considering the effect of material deterioration. In this paper, a prediction model of concrete mechanical properties under freeze-thaw cycles is established using regression analysis. Considering various uncertain factors, a time-varying structural reliability analysis model is established using finite element equivalent stress method and an optimized response surface method with improved sampling strategy and convergence criterion. A case study is later carried out. The results show that, at the early stage of freeze-thaw, the structural failure probability will increase steadily in a small range. However, as the tensile strength of concrete continues to decrease under long-time freeze-thaw action, the reliability of the arch dam structure will suddenly fall off a cliff. The proposed deterioration model and reliability analysis probability model are reasonable and practical and could be serve as a technical support for similar engineering projects.

3.
Micromachines (Basel) ; 13(12)2022 Dec 13.
Article in English | MEDLINE | ID: mdl-36557510

ABSTRACT

This work investigates the impacts of structural parameters on the performances of p-GaN/AlGaN/GaN HEMT-based ultraviolet (UV) phototransistors (PTs) using Silvaco Atlas. The simulation results show that a larger Al content or greater thickness for the AlGaN barrier layer can induce a higher two-dimensional electron gas (2DEG) density and produce a larger photocurrent. However, they may also lead to a larger dark current due to the incomplete depletion of the GaN channel layer. The depletion conditions with various Al contents and thicknesses of the AlGaN layer are investigated in detail, and a borderline between full depletion and incomplete depletion was drawn. An optimized structure with an Al content of 0.23 and a thickness of 14 nm is achieved for UV-PT, which exhibits a high photocurrent density of 92.11 mA/mm, a low dark current density of 7.68 × 10-10 mA/mm, and a large photo-to-dark-current ratio of over 1011 at a drain voltage of 5 V. In addition, the effects of other structural parameters, such as the thickness and hole concentration of the p-GaN layer as well as the thickness of the GaN channel layer, on the performances of the UV-PTs are also studied in this work.

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