Association between physical activity and functional movement screening among university students in an adaptive physical course.

BACKGROUND: Physical activity (PA) holds profound implications for the holistic development of college students. However, students with chronic diseases or physical disabilities experience significantly limited PA during adaptive sports. OBJECTIVE: This study aims to investigate the relationship between physical activity and Functional Movement Screening (FMS) among university students who participate in the adaptive physical course. METHODS: 36 university students (from the adaptive physical course) completed the International Physical Activity Questionnaire-Long Form (IPAQ-L). Body measurements and FMS were assessed. Correlation analysis and t-tests were used to determine relationships and differences between various indicators. A two-way analysis of variance was used to investigate potential variations in FMS scores based on gender and weight status. RESULTS: The results show that gender, PA, and BMI significantly influence FMS scores in students participating in adaptive physical courses. FMS score is significantly negatively correlated with BMI and significantly positively correlated with PA. The FMS score for males, as well as the scores for Trunk Stability Push-Up and Rotary Stability, are significantly higher than those for females. CONCLUSION: University students in adaptive physical courses can benefit from increased PA and FMS scores. Improving functional movement and enhancing physical activity are crucial for promoting overall health in this population.

Approaching strain limit of two-dimensional MoS2 via chalcogenide substitution.

Strain engineering is a promising method for tuning the electronic properties of two-dimensional (2D) materials, which are capable of sustaining enormous strain thanks to their atomic thinness. However, applying a large and homogeneous strain on these 2D materials, including the typical semiconductor MoS2, remains cumbersome. Here we report a facile strategy for the fabrication of highly strained MoS2 via chalcogenide substitution reaction (CSR) of MoTe2 with lattice inheritance. The MoS2 resulting from the sulfurized MoTe2 sustains ultra large in-plane strain (approaching its strength limit ~10%) with great homogeneity. Furthermore, the strain can be deterministically and continuously tuned to ~1.5% by simply varying the processing temperature. Thanks to the fine control of our CSR process, we demonstrate a heterostructure of strained MoS2/MoTe2 with abrupt interface. Finally, we verify that such a large strain potentially allows the modulation of MoS2 bandgap over an ultra-broad range (~1 eV). Our controllable CSR strategy paves the way for the fabrication of highly strained 2D materials for applications in devices.

Cardiorespiratory function, resting metabolic rate and heart rate variability in coal miners exposed to hypobaric hypoxia in highland workplace.

Background: Owing to intermittent/acute exposure to hypobaric hypoxia, highland miners may often suffer, the physiological characteristics between highland and lowland miners, however, are rarely reported. The objective of this study was to compare the physiological characteristics of coal miners working at disparate altitudes. Methods: Twenty-three male coal mining workers acclimating to high altitude for 30 ± 6 days in Tibet (highland group; approx. 4500 m above sea level; 628.39 millibar), and 22 male coal mining workers in Hebei (lowland group; less than 100 m above sea level; 1021.82 millibar) were recruited. Tests were conducted to compare ventilatory parameters, circulation parameters, resting metabolic rate (RMR), and heart rate variability (HRV) indices between the two groups in resting state. Results: Ventilation volume per minute (VE) of the highland group was markedly raised compared to that of the lowland group (11.70 ± 1.57 vs. 8.94 ± 1.97 L/min, p = 0.000). In the meanwhile, O2 intake per heart beat (VO2/HR) was strikingly decreased (3.54 ± 0.54 vs. 4.36 ± 0.69 ml/beat, p = 0.000). Resting metabolic rate relevant to body surface area (RMR/BSA) was found no significant difference between the two groups. Evident reduction in standard deviation of NN intervals (SDNN) and remarkable increase in ratio of low- and high- frequency bands (LF/HF) were manifest in highland miners compared to that of lowland ones (110.82 ± 33.34 vs. 141.44 ± 40.38, p = 0.008 and 858.86 ± 699.24 vs. 371.33 ± 171.46, p = 0.003; respectively). Conclusions: These results implicate that long-term intermittent exposure to high altitude can lead miners to an intensified respiration, a compromised circulation and a profound sympathetic-parasympathetic imbalance, whereas the RMR in highland miners does not distinctly decline.

Gender and Age Differences in Performance of Over 70,000 Chinese Finishers in the Half- and Full-Marathon Events.

(1) Background: The aim of the present study was to examine the characteristics of over 70,000 long-distance finishers over the last four years in Chinese half- and full-marathon events; (2) Methods: The available data of all finishers (n = 73,485; women, n = 17,134; men, n = 56,351) who performed half- and full-marathon events in Hangzhou from 2016 to 2019 were further analyzed for the characteristics of gender, age and average running speed; (3) Results: The total men-to-women ratio was the lowest in the half-marathon event (1.86) and the highest in the full-marathon event (17.42). Faster running performance in males than in females and faster average running speed in short-distance runners were shown. Gender and race distance were observed to have the most significant effects on average running speed (p < 0.01). For both male and female finishers, the slowest running speed was shown in older age groups (p < 0.01) during the full marathon. Our results indicated that the gender difference in performance was attenuated in the longer race distances and older age groups; (4) Conclusions: Understanding the participation and performances across different running distances would provide insights into physiological and biomechanical characteristics for training protocols and sports gear development in different groups.

Scalable Van der Waals Encapsulation by Inorganic Molecular Crystals.

Encapsulation is critical for devices to guarantee their stability and reliability. It becomes an even more essential requirement for devices based on 2D materials with atomic thinness and far inferior stability compared to their bulk counterparts. Here a general van der Waals (vdW) encapsulation method for 2D materials using Sb2 O3 layer of inorganic molecular crystal fabricated via thermal evaporation deposition is reported. It is demonstrated that such a scalable encapsulation method not only maintains the intrinsic properties of typical air-susceptible 2D materials due to their vdW interactions but also remarkably improves their environmental stability. Specifically, the encapsulated black phosphorus (BP) exhibits greatly enhanced structural stability of over 80 days and more sustaining-electrical properties of 19 days, while the bare BP undergoes degradation within hours. Moreover, the encapsulation layer can be facilely removed by sublimation in vacuum without damaging the underlying materials. This scalable encapsulation method shows a promising pathway to effectively enhance the environmental stability of 2D materials, which may further boost their practical application in novel (opto)electronic devices.

Recent Advances in 2D Layered Phosphorous Compounds.

2D layered phosphorous compounds (2D LPCs) have led to explosion of research interest in recent years. With the diversity of valence states of phosphorus, 2D LPCs exist in various material types and possess many novel physical and chemical properties. These properties, including widely adjustable range of bandgap, diverse electronic properties covering metal, semimetal, semiconductor and insulator, together with inherent magnetism and ferroelectricity at atomic level, render 2D LPCs greatly promising in the applications of electronics, spintronics, broad-spectrum optoelectronics, high-performance catalysts, and energy storage, etc. In this review, the recently research progress of 2D LPCs are presented in detail. First, the 2D LPCs are classified according to their elemental composition and the corresponding crystal structures are introduced, followed by their preparation methods. Then, the novel properties are summarized and the potential applications are discussed in detail. Finally, the conclusion and perspective of the promising 2D LPCs are discussed on the foundation of the latest research progress.

2D Cu9 S5 /PtS2 /WSe2 Double Heterojunction Bipolar Transistor with High Current Gain.

Bipolar junction transistor (BJT) as one important circuit element is now widely used in high-speed computation and communication for its capability of high-power signal amplification. 2D materials and their heterostructures are promising in building high-amplification and high-frequency BJTs because they can be naturally thin and highly designable in tailoring components properties. However, currently the low emitter injection efficiency results in only moderate current gain achieved in the pioneer researches, severely restraining its future development. Herein, it is shown that an elaborately designed double heterojunction bipolar transistor (DHBT) can greatly promote the injection efficiency, improving the current gain by order of magnitude. In this DHBT high-doping-density wide-bandgap 2D Cu9 S5 is used as emitter and narrow-bandgap PtS2 as base. This heterostructure efficiently suppresses the reverse electron flux from base and increase the injection efficiency. Consequently, the DHBT achieves an excellent current gain (ß ≈ 910). This work systematically explores the electrical behavior of 2D materials based DHBT, and provides deep insight of the architecture design for building high gain DHBT, which may promote the applications of 2Dheterojunctions in the fields of integrated circuits.

A Universal Atomic Substitution Conversion Strategy Towards Synthesis of Large-Size Ultrathin Nonlayered Two-Dimensional Materials.

Nonlayered two-dimensional (2D) materials have attracted increasing attention, due to novel physical properties, unique surface structure, and high compatibility with microfabrication technique. However, owing to the inherent strong covalent bonds, the direct synthesis of 2D planar structure from nonlayered materials, especially for the realization of large-size ultrathin 2D nonlayered materials, is still a huge challenge. Here, a general atomic substitution conversion strategy is proposed to synthesize large-size, ultrathin nonlayered 2D materials. Taking nonlayered CdS as a typical example, large-size ultrathin nonlayered CdS single-crystalline flakes are successfully achieved via a facile low-temperature chemical sulfurization method, where pre-grown layered CdI2 flakes are employed as the precursor via a simple hot plate assisted vertical vapor deposition method. The size and thickness of CdS flakes can be controlled by the CdI2 precursor. The growth mechanism is ascribed to the chemical substitution reaction from I to S atoms between CdI2 and CdS, which has been evidenced by experiments and theoretical calculations. The atomic substitution conversion strategy demonstrates that the existing 2D layered materials can serve as the precursor for difficult-to-synthesize nonlayered 2D materials, providing a bridge between layered and nonlayered materials, meanwhile realizing the fabrication of large-size ultrathin nonlayered 2D materials.

Suppression of Persistent Photoconductivity of Rubrene Crystals using Gate-Tunable Rubrene/Bi2 Se3 Diodes with Photoinduced Negative Differential Resistance.

Organic single-crystalline semiconductors show great potential in high-performance photodetectors. However, they suffer from persistent photoconductivity (PPC) due to the charge trapping, which has severely hindered high-speed imaging applications. Here, a universal strategy of solving the PPC by integrating with topological insulator Bi2 Se3 is provided. The rubrene/Bi2 Se3 heterojunctions are selected as an example for general demonstration due to the reproducibly high mobility and broad optoelectronic applications of rubrene crystals. By virtue of high carrier concentration on Bi2 Se3 surface and the strong built-in electrical field, the photoresponse of the heterotransistor is significantly reduced for more than two orders (from over 10 s to 54 ms), meanwhile the photoresponsivity can reach 124 A W-1 . To the best of knowledge, this operating speed is among the fastest responses in organic-inorganic heterojunctions. The heterotransistor also shows unique negative differential resistance under positive gate bias, which can be explained by photoinduced de-trapping of electron trap states in the bulk rubrene crystals. Besides, the rubrene/Bi2 Se3 heterojunction behaves as a gate-tunable backward-like diode due to the inhomogenous carrier distribution in the thick rubrene crystal and inversion of relative Fermi level positions. The findings demonstrate versatile functionalities of the rubrene/Bi2 Se3 heterojunctions for various emerging optoelectronic applications.

Atomically Thin Oxyhalide Solar-Blind Photodetectors.

2D wide-bandgap semiconductors demonstrate great potential in fabricating solar-blind ultraviolet (SBUV) photodetectors. However, the low responsivity of 2D solar-blind photodetectors still limits their practical applications. Here, high-responsivity solar-blind photodetectors are achieved based on 2D bismuth oxychloride (BiOCl) flakes. The 2D BiOCl photodetectors exhibit a responsivity up to 35.7 A W-1 and a specific detectivity of 2.2 × 1010 Jones under 250 nm illumination with 17.8 µW cm-2 power density. In particular, the enhanced photodetective performances are demonstrated in BiOCl photodetectors with increasing ambient temperature. Surprisingly, their responsivity can reach 2060 A W-1 at 450 K under solar-blind light illumination, maybe owing to the formation of defective BiOCl grains evidenced by in situ transmission electron microscopy. The high responsivity throughout the solar-blind range indicates that 2D BiOCl is a promising candidate for SBUV detection.

Approaching ohmic contact to two-dimensional semiconductors.

Two-dimensional semiconductors have attracted immense research interests owing to their intriguing properties and promising applications in electronic and optoelectronic devices. However, the performance of these devices is drastically hindered by the large Schottky barrier at the electric contact interface, which is hardly tunable due to the Fermi level pinning effect. In this review, we will analyze the root causes of the contact problems for the two-dimensional semiconductor devices and summarize the strategies on the basis of different contact geometries, aiming to lift out the Fermi level pinning effect and achieve the ohmic contact. Moreover, the remarkable improvement of the device performance thanks to these optimized contacts will be emphasized. At the end, the merits and limitations of these strategies will be discussed as well, which potentially gives a guideline for handling the electric contact issues in two-dimensional semiconductors devices.

Highly In-Plane Anisotropic 2D GeAs2 for Polarization-Sensitive Photodetection.

Due to the intriguing anisotropic optical and electrical properties, low-symmetry 2D materials are attracting a lot of interest both for fundamental studies and fabricating novel electronic and optoelectronic devices. Identifying new promising low-symmetry 2D materials will be rewarding toward the evolution of nanoelectronics and nano-optoelectronics. In this work, germanium diarsenide (GeAs2 ), a group IV-V semiconductor with novel low-symmetry puckered structure, is introduced as a favorable highly anisotropic 2D material into the rapidly growing 2D family. The structural, vibrational, electrical, and optical in-plane anisotropy of GeAs2 is systematically investigated both theoretically and experimentally, combined with thickness-dependent studies. Polarization-sensitive photodetectors based on few-layer GeAs2 exhibit highly anisotropic photodetection behavior with lineally dichroic ratio up to ≈2. This work on GeAs2 will excite interests in the less exploited regime of group IV-V compounds.

Guided Growth of Ag Nanowires by Galvanic Replacement on a Flexible Substrate.

An aligned Ag nanowire array was directly synthesized by galvanic replacement on curved poly(ethylene terephthalate) (PET) by using a Cu2O microcrystal as a reductant. A more orderly aligned nanowire array was obtained when the curvature radius was reduced. A second growth with different orientation produced Ag nanowire networks. The guided growth was also achieved when using Zn as a reductant or polystyrene as a substrate. This plain method with facile control over the orientation and density of the Ag nanowire array enriches the grow-in-place methodology and can potentially be applied to various fields.

Electrochemical deposition of layered copper thin films based on the diffusion limited aggregation.

In this work layered copper films with smooth surface were successfully fabricated onto ITO substrate by electrochemical deposition (ECD) and the thickness of the films was nearly 60 nm. The resulting films were characterized by SEM, TEM, AFM, XPS, and XRD. We have investigated the effects of potential and the concentration of additives and found that 2D dendritic-like growth process leaded the formation of films. A suitable growth mechanism based on diffusion limited aggregation (DLA) mechanism for the copper films formation is presented, which are meaningful for further designing homogeneous and functional films.