ABSTRACT
This study evaluates the effect of crystallinity and point defects on time-dependent photoresponsivity and the cathodoluminescence (CL) properties of ß-Ga2O3 epilayers. A synchrotron high-resolution X-ray technique was used to understand the crystalline structure of samples. Rutherford backscattering spectroscopy was used to determine the net chemical composition of the samples to examine the type and ratio of their possible point defects. The results show that in functional time-dependent photoresponsivity of photodetectors based on ß-Ga2O3 epilayers, point defects contribution overcomes the contribution of crystallinity. However, the crystalline structure affects the intensities and emission regions of CL spectra more than point defects.
ABSTRACT
Ion implantation is used to build a nanometer scale anti-ferromagnetic (AFM) cluster embedded exchange bias (EB) system. Ni film with a thickness of 100 nm is deposited on the Si (100) substrate using magnetron sputtering, 140 keV O+ is chosen to implant into the Ni film to form NiO AFM clusters, of which the size is estimated by X-ray diffraction based on synchrotron radiation (SR-XRD). By measuring hysteresis loop after field-cooling, significant shifts of loop along the applied field are observed. By increasing the implantation dose up to 3 x 10(17)/cm2 and annealing samples in N2 atmosphere, we discuss the origin of EB effect observed and the size confinement effect which lowers down the Néel temperature (T(N)) of NiO cluster to below room temperature.
