Waveguide lasing from V-shaped ZnO microstructure.

A V-shaped optical resonance cavity was obtained from ZnO microstructures grown by thermal chemical vapor deposition. Strong laser emissions were observed in three regions--the tip of the two branches and the bottom facet of the V-shaped microstructures--under UV laser excitation at room temperature. In the region where the diameter of the branches was smaller than the wavelength of the laser light, light could not propagate into the tip due to the cutoff phenomenon, resulting in partial reflection. Quasi-Fabry-Perot resonance in the branch and light reflection at the bottom facet characterized the V-shaped microcavity.

Microstructural characterization of high indium-composition InXGa1-XN epilayers grown on c-plane sapphire substrates.

The growth of high-quality indium (In)-rich In(X)Ga(1-X)N alloys is technologically important for applications to attain highly efficient green light-emitting diodes and solar cells. However, phase separation and composition modulation in In-rich In(X )Ga(1-X)N alloys are inevitable phenomena that degrade the crystal quality of In-rich In(X)Ga(1-X)N layers. Composition modulations were observed in the In-rich In(X)Ga(1-X)N layers with various In compositions. The In composition modulation in the In X Ga1-X N alloys formed in samples with In compositions exceeding 47%. The misfit strain between the InGaN layer and the GaN buffer retarded the composition modulation, which resulted in the formation of modulated regions 100 nm above the In(0.67)Ga(0.33)N/GaN interface. The composition modulations were formed on the specific crystallographic planes of both the {0001} and {0114} planes of InGaN.

Second harmonic generation in periodically polarity-inverted zinc oxide.

We report on the second harmonic generation (SHG) in 2D periodically polarity-inverted (PPI) ZnO heterostructures. The grating structures with nanometer-scale periodicity are fabricated on (0001) Al(2)O(3) substrates by using the in situ polarity inversion method. The achievements of SHG with grating in fabricated PPI ZnO structures are demonstrated under consideration of quasi phase matching conditions. In general, grating formation using the this periodical array of differnet polar surface can be extended to the other heteroepitaxial systems with polarity characteristics.

Optical resonant cavity in a nanotaper.

The present study describes an optical resonant cavity in a nanotaper with scale reduction from micro to several nanometers. Both experimental results and a finite-difference time-domain (FDTD)-based simulation suggested that the nanometer-scale taper with a diameter similar to the wavelength of light acted as a mirror, which facilitated the formation of a laser cavity and caused lasing in ZnO nanotapers. As the light inside the nanotaper propagated toward the apex, the lateral mode was reduced and reflection occurred. This report suggests that use of the resonant optical cavities in nanotapers might result in novel active and passive optical components, which will broaden the horizons of photonic technology.

Lateral arrays of vertical ZnO nanowalls on a periodically polarity-inverted ZnO template.

Well aligned ZnO nanowall arrays with submicron pitch were grown on a periodically polarity-inverted ZnO template using a carbothermal reduction process. Under the conditions of a highly dense Au catalyst for increasing nucleation sites, ZnO nanowalls with a thickness of 126 +/- 10 nm, an average height of 3.4 microm, and a length of about 10 mm were formed on the template. The nanowalls were only grown on a Zn-polar surface due to a different growth mode with an O-polar surface. The results of x-ray diffraction and photoluminescence (PL) measurements revealed a single crystalline, vertical alignment on the template, and a large surface to volume ratio of the ZnO nanowalls.

Ordered arrays of ZnO nanorods grown on periodically polarity-inverted surfaces.

Periodically polarity inverted (PPI) ZnO templates were fabricated using molecular beam epitaxy by employing MgO buffer layers. The polarity of ZnO film was controlled by the transformation of crystal structure from hexagonal to rocksalt due to the thickness of the MgO buffer layers. The polarity of ZnO in the PPI template was confirmed by AFM and PRM measurement. Higher growth rate and lower current value under positive supplied voltage in the region of Zn-polar were measured with comparing to that of O-polar. Holographic lithographic technique was employed for the realization of submicron pattern of periodical inverted polar ZnO over large area. After reaction using a carbothermal reduction, spatially well-separated ZnO nanorods with pitch of submicron were only observed in the Zn-polar regions. The possible reason for the difference of surface characteristics was considered as being due to the configuration of dangling bonds according to polarity.

Photoelectrochemical reaction and H2 generation at zero bias optimized by carrier concentration of n-type GaN.

The authors studied the photoelectrochemical properties dependent on carrier concentration of n-type GaN. The photocurrent at zero bias became the maximum value at the carrier concentration of 1.7x10(17) cm-3. Using the sample optimized carrier concentration, the authors achieved H2 gas generation at a Pt counterelectrode without extra bias for the first time. The authors also discussed the mechanism of the dependence of photocurrent on the carrier concentration of GaN.

Control of the ZnO nanowires nucleation site using microfluidic channels.

We report on the growth of uniquely shaped ZnO nanowires with high surface area and patterned over large areas by using a poly(dimethylsiloxane) (PDMS) microfluidic channel technique. The synthesis uses first a patterned seed template fabricated by zinc acetate solution flowing though a microfluidic channel and then growth of ZnO nanowire at the seed using thermal chemical vapor deposition on a silicon substrate. Variations the ZnO nanowire by seed pattern formed within the microfluidic channel were also observed for different substrates and concentrations of the zinc acetate solution. The photocurrent properties of the patterned ZnO nanowires with high surface area, due to their unique shape, were also investigated. These specialized shapes and patterning technique increase the possibility of realizing one-dimensional nanostructure devices such as sensors and optoelectric devices.

Selective growth of vertically-aligned ZnO nano-needles.

Vertically-aligned zinc oxide (ZnO) nano-needles have been selectively grown on the Si (100) substrates using chemical vapor transport and condensation method without metal catalyst. The selective nucleation of nano-needles was achieved by the controlled treatment of substrate surface using zinc acetate aqueous solution. The nano-needles were selectively grown on the zinc acetate treated area, while the nano-tetrapod structures were formed on the non-treated area. The nano-needles have uniform tip-diameter and length, about 10 nm and 2-3 microm, respectively. The angle of the ZnO nano-needles from the substrate was 90 +/- 0.2 degrees. The structural and optical properties of nano-needles and nanotetrapod structures were investigated using scanning electron microscopy (SEM), X-ray diffraction (XRD), and photoluminescence (PL). The results showed that ZnO nano-needles grow along the c-axis of the crystal plane due to the c-oriented ZnO nanoseeds formed by zinc acetate treatment. The nano-needles have strong ultraviolet emission peak of 3.29 eV with green emission of 2.3 eV at room temperature. This selective growth technique of vertical nano-needles using aqueous solution method has potential applications in the field emission devices or optoelectronic devices hybridized with silicon based electronic devices.

Novel method for site-controlled surface nanodot fabrication by ion beam synthesis.

By using a Ga FIB system to spatially control the implantation of Ga into SiO(2) followed by vacuum annealing, we have fabricated self-assembled surface Ga nanodots with a high degree of control of nucleation location. The morphology of the Ga nanodots is closely related to Ga dose, showing a critical dose needed for nucleation that results in Ga nanodot formation just below the surface, while at higher doses Ga nanodots form on the surface as metallic Ga droplets. Possible applications include defining nucleation sites for subsequent growth, use as Ga source for GaN or GaAs quantum dots, or as catalyst for nanowire growth.