ABSTRACT
The influence of the addition of Bi to the dilute ferromagnetic semiconductor (Ga,Mn)As on its electronic structure as well as on its magnetic and structural properties has been studied. Epitaxial (Ga,Mn)(Bi,As) layers of high structural perfection have been grown using low-temperature molecular-beam epitaxy. Post-growth annealing of the samples improves their structural and magnetic properties and increases the hole concentration in the layers. Hard X-ray angle-resolved photoemission spectroscopy reveals a strongly dispersing band in the Mn-doped layers, which crosses the Fermi energy and is caused by the high concentration of Mn-induced itinerant holes located in the valence band. An increased density of states near the Fermi level is attributed to additional localized Mn states. In addition to a decrease in the chemical potential with increasing Mn doping, we find significant changes in the valence band caused by the incorporation of a small atomic fraction of Bi atoms. The spin-orbit split-off band is shifted to higher binding energies, which is inconsistent with the impurity band model of the band structure in (Ga,Mn)As. Spectroscopic ellipsometry and modulation photoreflectance spectroscopy results confirm the valence band modifications in the investigated layers.
ABSTRACT
An optical sensor integrated into a polymer microfluidic chip is proposed as a low cost solution to highly parallel biochemical analysis. The sensor consists of a single high-finesse optical resonator for direct analytes detection. High quality silica microspheres (diameter approximately 300 microm) are easily produced and low-loss whispering gallery modes were excited through evanescent coupling at wavelengths near 1550 nm and 544 nm. The quality factor (Q) and ring down time of these modes is sensitive to minute changes in the microresonator environment thus making it an excellent candidate for a sensor. Instead of the traditional time domain studies, we determine quality factors and ring down times as long as 53.8 +/- 0.6 ns (Q approximately 10(6)) from phase shift measurements using optical sources with sinusoidal intensity modulations of 300 kHz and below.
