Superior ferroelectricity and nonlinear optical response in a hybrid germanium iodide hexagonal perovskite.

Abundant chemical diversity and structural tunability make organic-inorganic hybrid perovskites (OIHPs) a rich ore for ferroelectrics. However, compared with their inorganic counterparts such as BaTiO3, their ferroelectric key properties, including large spontaneous polarization (Ps), low coercive field (Ec), and strong second harmonic generation (SHG) response, have long been great challenges, which hinder their commercial applications. Here, a quasi-one-dimensional OIHP DMAGeI3 (DMA = Dimethylamine) is reported, with notable ferroelectric attributes at room temperature: a large Ps of 24.14 µC/cm2 (on a par with BaTiO3), a low Ec below 2.2 kV/cm, and the strongest SHG intensity in OIHP family (about 12 times of KH2PO4 (KDP)). Revealed by the first-principles calculations, its large Ps originates from the synergistic effects of the stereochemically active 4s2 lone pair of Ge2+ and the ordering of organic cations, and its low kinetic energy barrier of small DMA cations results in a low Ec. Our work brings the comprehensive ferroelectric performances of OIHPs to a comparable level with commercial inorganic ferroelectric perovskites.

Enhanced Curie temperature and conductivity of van der Waals ferromagnet MgV2S4via electrostatic doping.

A van der Waals intrinsic ferromagnet with double magnetic atom layers is of great interest for both revealing fundamental physics and exploring promising applications in low-dimensional spintronics. Here, the magnetic and electronic properties of the van der Waals ferromagnet MgV2S4 monolayer are studied under electrostatic doping using first-principles calculations. A MgV2S4 monolayer presents the desired physical properties such as that of being a half-semiconductor with a direct bandgap of 1.21 eV and a ferromagnetic ground state, and having a high Curie temperature of 462 K. Unlike the robust ferromagnetic ground state, magnetic anisotropy and Curie temperature are sensitive to electrostatic doping. Meanwhile, the transition from a semiconductor to a half-metal and the significant improvement in conductivity under electrostatic doping make the MgV2S4 monolayer a promising candidate for low-dimensional spintronic field-effect transistors.