Graphene-Based Physically Unclonable Functions with Dual Source of Randomness.

There is growing interest in systems with randomized responses for generating physically unclonable functions (PUFs) in anticounterfeiting and authentication applications. Atomic-level control over its thickness and unique Raman spectrum make graphene an attractive material for PUF applications. Herein, we report graphene PUFs that emerge from two independent stochastic processes. Randomized variations in the shape and number of graphene adlayers were achieved by exploiting and improving the mechanistic understanding of the chemical vapor deposition of graphene. The randomized positioning of the graphene domains was then facilitated by dewetting the polymer film, followed by oxygen plasma etching. This approach yielded surfaces with randomly positioned and shaped graphene islands with varied numbers of layers and, therefore, Raman spectra. Raman mapping of surfaces resulted in multicolor images with a high encoding capacity. Advanced feature-matching algorithms were employed for the authentication of multicolor images. The use of two independent stochastic processes on a two-dimensional nanomaterial platform enables the creation of unique and complex surfaces that excessively challenge clonability.

Ultrasensitive N-Channel Graphene Gas Sensors by Nondestructive Molecular Doping.

Sensitive and selective detection of target gases is the ultimate goal for commercialization of graphene gas sensors. Here, ultrasensitive n-channel graphene gas sensors were developed by using n-doped graphene with ethylene amines. The exposure of the n-doped graphene to oxidizing gases such as NO2 leads to a current decrease that depends strongly on the number of amine functional groups in various types of ethylene amines. Graphene doped with diethylenetriamine (DETA) exhibits the highest response, recovery, and long-term sensing stability to NO2, with an average detection limit of 0.83 parts per quadrillion (ppq, 10-15), due to the attractive electrostatic interaction between electron-rich graphene and electron-deficient NO2. Our first-principles calculation supported a preferential adsorption of NO2 on n-doped graphene. In addition, gas molecules on the n-channel graphene provide charged impurities, thereby intensifying the current decrease for an excellent response to oxidizing gases such as NO2 or SO2. On the contrary, absence of such a strong interaction between NH3 and DETA-doped graphene and combined effects of current increase by n-doping and mobility decrease by charged impurities result in a completely no response to NH3. Because the n-channel is easily induced by a top-molecular dopant, a flexible graphene sensor with outstanding NO2 detection capability was successfully fabricated on plastic without vertical stacks of gate-electrode and gate-dielectric. Our gate-free graphene gas sensors enabled by nondestructive molecular n-doping could be used for the selective detection of subppq-level NO2 in a gas mixture with reducing gases.

Enhanced Gas Sensing Properties of Graphene Transistor by Reduced Doping with Hydrophobic Polymer Brush as a Surface Modification Layer.

Surface modification layer of a silicon substrate has been used to enhance the performance of graphene field-effect transistors (FETs). In this report, ultrathin and chemically robust polymer brush was used as a surface modification to enhance the gas sensing properties of graphene FETs. The insertion of the polymer brush decreased substrate-induced doping of graphene. This leads to a huge increase in field-effect mobility as well as a minimum shift of the Dirac point voltage. The use of the polymer brush enables fast detection of target gas molecules because graphene sensing modality can be maximized at the undoped state of graphene. The increase of source-drain current, as well as the abrupt decrease of electron mobility upon NO2 exposure, was utilized for the instantaneous detection, and a limit of detection of 4.8 ppb was achieved with graphene FETs on PS brush. We also showed excellent cross-sensitivity of graphene gas sensors to NH3, CO2, and relative humidity condition; the source-drain current decreases upon NH3 exposure, while response to CO2 or relative humidity condition is extremely low. Our results prove that reducing the substrate-induced doping of graphene with a polymer brush is a direct method for boosting the gas sensing properties of graphene FETs.

Fabrication of ordered arrays of micro- and nanoscale features with control over their shape and size via templated solid-state dewetting.

Templated solid-state dewetting of single-crystal films has been shown to be used to produce regular patterns of various shapes. However, the materials for which this patterning method is applicable, and the size range of the patterns produced are still limited. Here, it is shown that ordered arrays of micro- and nanoscale features can be produced with control over their shape and size via solid-state dewetting of patches patterned from single-crystal palladium and nickel films of different thicknesses and orientations. The shape and size characteristics of the patterns are found to be widely controllable with varying the shape, width, thickness, and orientation of the initial patches. The morphological evolution of the patches is also dependent on the film material, with different dewetting behaviors observed in palladium and nickel films. The mechanisms underlying the pattern formation are explained in terms of the influence on Rayleigh-like instability of the patch geometry and the surface energy anisotropy of the film material. This mechanistic understanding of pattern formation can be used to design patches for the precise fabrication of micro- and nanoscale structures with the desired shapes and feature sizes.

Graphene synthesis via magnetic inductive heating of copper substrates.

Scaling graphene growth using an oven to heat large substrates becomes less energy efficient as system size is increased. We report a route to graphene synthesis in which radio frequency (RF) magnetic fields inductively heat metal foils, yielding graphene of quality comparable to or higher than that of current chemical vapor deposition techniques. RF induction heating allows for rapid temperature ramp up/down, with great potential for large scale and rapid manufacturing of graphene with much better energy efficiency. Back-gated field effect transistors on a SiO2/Si substrate showed carrier mobility up to ∼14 000 cm(2) V(-1) s(-1) measured under ambient conditions. Many advantages of RF heating are outlined, and some fundamental aspects of this approach are discussed.