1.
Small
; 13(13)2017 04.
Article
in English
| MEDLINE
| ID: mdl-28139872
ABSTRACT
Cadmium-free thick-shelled InP/ZnSeS/ZnS quantum dot (QD) was synthesized using the heating-up approach. This quantum dots was used in inverted quantum dots light emitting diode (QLED) devices. The brightness of the inverted QLED device can reach a brightness of over 10 000 cd m-2 , low turn-on voltage (2.2 V), and high power efficiency (4.32 lm W-1 ).