Glancing angle deposition of large-scale helical Si@Cu3Si nanorod arrays for high-performance anodes in rechargeable Li-ion batteries.

Silicon (Si) anode materials have attracted substantial interest due to their high theoretical capacity. Here, the growth of helical Si@Cu3Si nanorod arrays via glancing angle deposition (GLAD) followed by an annealing process is reported. Pre-deposited Cu atoms were driven into Si-nanorods and successfully reacted with Si to form a Si-Cu alloy at a high temperature. By varying the rotation rate and annealing temperature, the resultant Si@Cu3Si nanorod arrays showed a reasonably accessible surface area with precise control spacing behavior in favor of accommodating Si volume expansion. Meanwhile, the Si@Cu3Si anode materials showed higher electrical conductivity, facilitating Li+ ion diffusion and electron transfer. The Si@Cu3Si nanorod arrays in half cells exhibited a volumetric capacity as high as 3350.1 mA h cm-3 at a rate of 0.25 C and could maintain 1706.7 mA h cm-3 after 100 cycles, which are superior to those of pristine Si materials. This facile and innovative technology provided new insights into the development of Si-based electrode materials.

A new oligonucleotide array for the detection of multidrug and extensively drug-resistance tuberculosis.

Drug-resistant tuberculosis (TB) is a global crisis and a threat to health security. Since conventional drug susceptibility testing (DST) takes several weeks, we herein described a molecular assay to rapidly identify multidrug-resistant (MDR) and extensively drug-resistant (XDR) and reveal transmission associated-mutations of Mycobacterium tuberculosis complex (MTBC) isolates in 6 to 7 hours. An array was designed with 12 pairs of primers and 60 single nucleotide polymorphisms of 9 genes: rpoB, katG, inhA, ahpC, embB, rpsL, gyrA, rrs and eis. We assessed the performance of the array using 176 clinical MTBC isolates. The results of culture-based DST were used as the gold standard, the GenoType MTBDRplus and MTBDRsl tests were used for parallel comparison, and gene sequencing was performed to resolve the discordance. The sensitivities and specificities of the array are comparable to those of the MTBDRplus test for resistance to isoniazid (INH) (100.0%, 96.7%) and rifampicin (RIF) (99.4%, 96.7%) and of the MTBDRsl test for resistance to fluoroquinolones (FQs) (100%, 100%) and second-line injectable drugs (SLIDs) (98.3%, 100%). The sensitivities of the array for detecting resistance to ethambutol and streptomycin were 79.3% and 64.9%, respectively. The array has potential as a powerful tool for clinical diagnosis and epidemiological investigations.

InGaAs Nanomembrane/Si van der Waals Heterojunction Photodiodes with Broadband and High Photoresponsivity.

Development of broadband photodetectors is of great importance for applications in high-capacity optical communication, night vision, and biomedical imaging systems. While heterostructured photodetectors can expand light detection range, fabrication of heterostructures via epitaxial growth or wafer bonding still faces significant challenges because of problems such as lattice and thermal mismatches. Here, a transfer printing technique is used for the heterogeneous integration of InGaAs nanomembranes on silicon semiconductors and thus the formation of van der Waals heterojunction photodiodes, which can enhance the spectral response and photoresponsivity of Si photodiodes. Transfer-printed InGaAs nanomembrane/Si heterojunction photodiode exhibits a high rectification ratio (7.73 × 104 at ±3 V) and low leakage current (7.44 × 10-5 A/cm2 at -3 V) in a dark state. In particular, the photodiode shows high photoresponsivities (7.52 and 2.2 A W-1 at a reverse bias of -3 V and zero bias, respectively) in the broadband spectral range (400-1250 nm) and fast rise-fall response times (13-16 ms), demonstrating broadband and fast photodetection capabilities. The suggested III-V/Si van der Waals heterostructures can be a robust platform for the fabrication of high-performance on-chip photodetectors compatible with Si integrated optical chips.

Ultrafast Graphene Growth on Insulators via Metal-Catalyzed Crystallization by a Laser Irradiation Process: From Laser Selection, Thickness Control to Direct Patterned Graphene Utilizing Controlled Layer Segregation Process.

Despite the vast progress in chemical vapor deposition (CVD) graphene grown on metals, the transfer process is still a major bottleneck, being not devoid of wrinkles and polymer residues. In this paper, a structure is introduced to directly synthesize few layer graphene on insulating substrates by a laser irradiation heating process. The segregation of graphene layers can be manipulated by tuning the metal layer thickness and laser power at different scanning rates. Graphene deposition and submicrometer patterning resolution can be achieved by patterning the intermediate metal layer using standard lithography methods in order to overcome the scalability issue regardless the resolution of the laser beam. The systematic analysis of the process based on the formation of carbon microchannels by the laser irradiation process can be extended to several materials, thicknesses, and methods. Furthermore, hole and electron mobilities of 500 and 950 cm(2) V(-1) s(-1) are measured. The laser-synthesized graphene is a step forward along the direct synthesis route for graphene on insulators that meets the criteria for photonics and electronics.

Direct growth of self-crystallized graphene and graphite nanoballs with Ni vapor-assisted growth: from controllable growth to material characterization.

A directly self-crystallized graphene layer with transfer-free process on arbitrary insulator by Ni vapor-assisted growth at growth temperatures between 950 to 1100 °C via conventional chemical vapor deposition (CVD) system was developed and demonstrated. Domain sizes of graphene were confirmed by Raman spectra from ~12 nm at growth temperature of 1000 °C to ~32 nm at growth temperature of 1100 °C, respectively. Furthermore, the thickness of the graphene is controllable, depending on deposition time and growth temperature. By increasing growth pressure, the growth of graphite nano-balls was preferred rather than graphene growth. The detailed formation mechanisms of graphene and graphite nanoballs were proposed and investigated in detail. Optical and electrical properties of graphene layer were measured. The direct growth of the carbon-based materials with free of the transfer process provides a promising application at nanoelectronics.

Vacuum-induced wrinkle arrays of InGaAs semiconductor nanomembranes on polydimethylsiloxane microwell arrays.

Tunable surface morphology in III-V semiconductor nanomembranes provides opportunities to modulate electronic structures and light interactions of semiconductors. Here, we introduce a vacuum-induced wrinkling method for the formation of ordered wrinkles in InGaAs nanomembranes (thickness, 42 nm) on PDMS microwell arrays as a strategy for deterministic and multidirectional wrinkle engineering of semiconductor nanomembranes. In this approach, a vacuum-induced pressure difference between the outer and inner sides of the microwell patterns covered with nanomembranes leads to bulging of the nanomembranes at the predefined microwells, which, in turn, results in stretch-induced wrinkle formation of the nanomembranes between the microwells. The direction and geometry of the nanomembrane wrinkles are well controlled by varying the PDMS modulus, depth, and shape of microwells, and the temperature during the transfer printing of nanomembrane onto heterogeneous substrates. The wrinkling method shown here can be applied to other semiconductor nanomembranes and may create an important platform to realize unconventional electronic devices with tunable electronic properties.

Fiber-based all-solid-state flexible supercapacitors for self-powered systems.

All-solid-state flexible supercapacitors based on a carbon/MnO(2) (C/M) core-shell fiber structure were fabricated with high electrochemical performance such as high rate capability with a scan rate up to 20 V s(-1), high volume capacitance of 2.5 F cm(-3), and an energy density of 2.2 × 10(-4) Wh cm(-3). By integrating with a triboelectric generator, supercapacitors could be charged and power commercial electronic devices, such as a liquid crystal display or a light-emitting-diode, demonstrating feasibility as an efficient storage component and self-powered micro/nanosystems.