Superconductivity emerging from a stripe charge order in IrTe2 nanoflakes.

Superconductivity in the vicinity of a competing electronic order often manifests itself with a superconducting dome, centered at a presumed quantum critical point in the phase diagram. This common feature, found in many unconventional superconductors, has supported a prevalent scenario in which fluctuations or partial melting of a parent order are essential for inducing or enhancing superconductivity. Here we present a contrary example, found in IrTe2 nanoflakes of which the superconducting dome is identified well inside the parent stripe charge ordering phase in the thickness-dependent phase diagram. The coexisting stripe charge order in IrTe2 nanoflakes significantly increases the out-of-plane coherence length and the coupling strength of superconductivity, in contrast to the doped bulk IrTe2. These findings clarify that the inherent instabilities of the parent stripe phase are sufficient to induce superconductivity in IrTe2 without its complete or partial melting. Our study highlights the thickness control as an effective means to unveil intrinsic phase diagrams of correlated van der Waals materials.

Charge-ordering cascade with spin-orbit Mott dimer states in metallic iridium ditelluride.

Spin-orbit coupling results in technologically-crucial phenomena underlying magnetic devices like magnetic memories and energy-efficient motors. In heavy element materials, the strength of spin-orbit coupling becomes large to affect the overall electronic nature and induces novel states such as topological insulators and spin-orbit-integrated Mott states. Here we report an unprecedented charge-ordering cascade in IrTe2 without the loss of metallicity, which involves localized spin-orbit Mott states with diamagnetic Ir(4+)-Ir(4+) dimers. The cascade in cooling, uncompensated in heating, consists of first order-type consecutive transitions from a pure Ir(3+) phase to Ir(3+)-Ir(4+) charge-ordered phases, which originate from Ir 5d to Te 5p charge transfer involving anionic polymeric bond breaking. Considering that the system exhibits superconductivity with suppression of the charge order by doping, analogously to cuprates, these results provide a new electronic paradigm of localized charge-ordered states interacting with itinerant electrons through large spin-orbit coupling.

Temperature dependence of the electronic structure of two-dimensional Na gas on the Si(111)-7 × 7 surface.

The temperature dependence of the irreversible phase transition from a two-dimensional gas to an ordered zero-dimensional solid on the Si(111)-7 × 7 surface was studied using photoemission spectroscopy. With increasing Na coverage, the two-dimensional Na gas, which is a state of highly mobile Na atoms, undergoes a phase transition into ordered zero-dimensional magic nanoclusters at room temperature. The critical Na coverage of the phase transition was found to increase with reduced temperature. This was used to develop a gas-solid phase diagram of Na atoms on the Si(111)-7 × 7 surface as a function of Na coverage and sample temperature based on the electronic structure. The temperature dependence of the phase transition can be ascribed to the suppression of the thermal energy that is required to overcome the energetic barrier between the two-dimensional gas and the zero-dimensional solid at low temperature, where three different hopping mechanisms are related to the phase transition.

Unidirectional Pt silicide nanowires grown on vicinal Si(100).

We investigated the structure and electronic properties of unidirectional Pt(2)Si nanowires (NWs) grown on a Si(100)-2 degrees off surface. We found that Pt(2)Si NWs were formed along the step edges of the Si(100)-2 degrees off surface with c(4x6) reconstructions that occurred on the terraces of Si(100) using scanning tunneling microscopy and the structure of formed NWs was found to be Pt(2)Si by core-level photoemission spectroscopy. Moreover, we confirmed that the electronic band structures of the NWs along the NW direction are different from those perpendicular to the NWs and the surface state induced by the Pt(2)Si NWs was observed with a small density of state using the angle-resolved photoemission spectra.

Oxidation of step edges on Si(001)-c(4x2).

The initial oxidation process of the ultraclean Si(001)-c(4x2) surface is studied using scanning tunneling microscopy at low temperature. At the early stage of oxygen adsorption, reactions with Si atoms at SB steps are dominant over those at terraces by more than 2 orders of magnitude, and they proceed in two distinct stages to high oxidation states. Guided by the ab initio calculations, the oxidation structures at each stage are proposed. The extreme reactivity of the step edge is due to the presence of rebonded adatoms with dangling bonds and weak rebonds, and their proximity allows the formation of -Si-O- chain structures along the step edge, unlike those on the Si(111) surface.

Coexistence of two different Peierls distortions within an atomic scale wire: Si(553)-Au.

The ground state property of a Au-induced atomic wire array on a stepped Si(553) surface with interesting 1D metallic bands was investigated. Electron diffraction and scanning tunneling microscopy reveal an intriguing coexistence of triple- and double-period lattice distortions at low temperature. Angle-resolved photoemission observes both the nearly 1/3- and 1/2-filled bands to gradually open energy gaps upon cooling. We explain these unusual findings as due to the occurrence of Peierls distortions of triple and double periods on the two different atomic-scale chain elements, respectively, within a single unit wire. The two Peierls distortions are suggested to have different transition temperatures and little lateral correlation between each other.

Robust one-dimensional metallic band structure of silicide nanowires.

Angle-resolved photoemission (ARP) is employed to investigate the electronic structure of an extremely anisotropic form of nanocrystals--GdSi(2-x) nanowires on Si(100). Using a stepped Si(100) surface, a well-ordered and uniformly oriented array of nanowires is formed along the step edges as confirmed by diffraction and microscopy. The ARP measurement discloses two distinct electronic bands near the Fermi level, which disperse one dimensionally along the nanowires. These bands are metallic with the electron filling of 1/4 and 2/5, respectively, and with the effective mass close to that of a free electron along the wires. The metallicity is robust down to 20 K, in contrast to metallic surface atomic chain systems, paving a way to further studies on one-dimensional physics of metallic nanowires.

Atomic-scale phase coexistence and fluctuation at the quasi-one-dimensional metal-insulator transition.

Scanning tunneling microscopy of a quasi-one-dimensional (1D) metal-insulator transition in an In nanowire array on the Si(111) surface reveals unprecedented details in the transition dynamics. The transition proceeds in microscopic first order, namely, through the domain-by-domain conversion at the nanoscale, from the metallic to the insulating phase or vice versa. The definition of domains and their effective transition temperatures (Tc) are strongly correlated with the distribution of defects. Below Tc, the condensation and the fluctuation of 1D charge density waves are observed within the isolated metallic domains, as well as at the domain boundaries. The appearance of such isolated condensates suggests a strong intrawire coupling: a manifestation of the 1D nature of the critical fluctuation, as well as the origin of the first-order transition.

Mechanism of gap opening in a triple-band Peierls system: in atomic wires on Si.

One dimensional (1D) metals are unstable at low temperature undergoing a metal-insulator transition coupled with a periodic lattice distortion, a Peierls transition. Angle-resolved photoemission study for the 1D metallic chains of In on Si(111), featuring a metal-insulator transition and triple metallic bands, clarifies in detail how the multiple band gaps are formed at low temperature. In addition to the gap opening for a half-filled ideal 1D band with a proper Fermi surface nesting, two other quasi-1D metallic bands are found to merge into a single band, opening a unique but k-dependent energy gap through an interband charge transfer. This result introduces a novel gap-opening mechanism for a multiband Peierls system where the interband interaction is important.

Direct evidence of the charge ordered phase transition of indium nanowires on Si111.

A controversial issue of the driving force for the phase transition of the one-dimensional (1D) metallic In wires on Si(111) is studied by low-temperature scanning tunneling microscopy and spectroscopy. The energy gap opening and the longitudinal charge ordering through charge transfer at the Fermi level are unambiguously observed. The vacancy defects induce a local charge ordering decoupled from a lattice distortion above T(c), and pin the phase of charge order below T(c). All these results below and above T(c) including the detailed features such as local fluctuations strongly support the 1D charge-density-wave mechanism for the phase transition.

Indium square root 7 x square root 3 on Si(111): a nearly free electron metal in two dimensions.

We present measurements of the Fermi surface and underlying band structure of a single layer of indium on Si(111) with square root 7 x square root 3 periodicity. Electrons from both indium valence electrons and silicon dangling bonds contribute to a nearly free, two-dimensional metal on a pseudo-4-fold lattice, which is almost completely decoupled at the Fermi level from the underlying hexagonal silicon lattice. The mean free path inferred from our data is quite long, suggesting the system might be a suitable model for studying the ground state of two-dimensional metals.

Metal-insulator transition in Au atomic chains on Si with two proximal bands.

One-dimensional atomic chains on Au/Si(557) feature two proximal 1D bands near the Fermi level, which were controversially attributed as a spinon-holon pair of a Luttinger liquid. Angle-resolved photoemission shows that only one band is metallic with the neighboring one gapped at room temperature. Furthermore, even the metallic branch is found to undergo a metal-insulator transition upon cooling, which follows a mean-field-type behavior. Scanning tunneling microscopy observes two apparently unequivocal chains on the surface, one of which exhibits periodicity doubling accompanying the metal-insulator transition. The surface 1D structure is thus concluded to be insulating at low temperature with a Peierls-type instability.

Spontaneous N incorporation onto a Si(100) surface.

Initial nitridation of the Si(100) surface is investigated using photoemission, ion-scattering and ab initio calculations. After dissociation of NO or NH3, nitrogen atoms are found to spontaneously form a stable, highly coordinated N[triple bond]Si(3) species even at room temperature. The majority of the N species is incorporated into the subsurface Si layers occupying an interstitial site, whose atomic structure and unique bonding mechanism is clarified through ab initio calculations. This unusual adsorption behavior elucidates the atomistic mechanism of initial silicon nitride formation on the surface and has important implication on the N-rich layer formation at the SiO(x)N(y)/Si interface.

Stress relief as the driving force for self-assembled bi nanolines.

Bi nanolines self-assemble on Si(001) and are remarkable for their straightness and length-they are often more than 400 nm long, and a kink in a nanoline has never been observed. Through electronic structure calculations, we have found an energetically favorable structure for these nanolines that agrees with our scanning tunneling microscopy and photoemission experiments; the structure has an extremely unusual subsurface structure, comprising a double core of seven-membered rings of silicon. Our proposed structure explains all the observed features of the nanolines, and shows that surface stress resulting from the mismatch between the Bi and the Si substrates is responsible for their self-assembly. This has wider implications for the controlled growth of nanostructures on semiconductor surfaces.

Adsorbate-induced pinning of a charge-density wave in a quasi-1D metallic chains: Na on the In/Si(111)-(4x1) surface.

We find that foreign adsorbates acting as local impurities can induce a metal-insulator transition by pinning a charge-density wave (CDW) on the quasi-1D metallic In/Si(111)-(4x1) chain system. Our scanning tunneling microscopy image clearly reveals the presence of a new local 4x2 structure nucleated by Na adatoms at room temperature, which turns out to be insulating with a doubled periodicity along the chains. We directly determine a CDW gap energy Delta = 105+/-8 meV by identifying a characteristic loss peak in our high-resolution electron-energy-loss spectra. We thus report the first observation of a local impurity-derived Peierls-like reconstruction of a quasi-1D system.

Novel pathway to the growth of diamond on cubic beta-SiC(001).

By carrying out first-principles calculations on diamond-forming processes, we predict a method for the heteroepitaxial growth of diamond on cubic beta-SiC(001). In the method, we used two processes: (i) the preformation of an sp(3)-like surface configuration of beta-SiC(001) by the adsorption of group-V surfactants; (ii) the successive growth of diamond by the segregation of the surfactants onto a surface and the desorption of surface hydrogen. Analyzing the segregation energies, we found that the atomic size effect plays a crucial role in the surfactant-mediated growth of diamond on beta-SiC(001).

Flavor, color, and vitamin C retention of pulsed electric field processed orange juice in different packaging materials.

Effects of packaging materials, storage temperature, and time on the stability of pulsed electric field (PEF) processed orange juice were investigated. Single-strength orange juice was treated with PEF at an electric field strength of 35 kV/cm for 59 micros using an integrated pilot plant scale PEF processing and glovebox packaging system. The retention of eight orange juice aroma compounds, color, and vitamin C in glass, polyethylene terephthalate (PET), high-density polyethylene, and low-density polyethylene were evaluated at 4 and 22 degrees C for 112 days. Packaging material had a significant effect (p < or = 0.05) on the retention of orange juice aroma compounds, color, and vitamin C. PEF-treated orange juice had a shelf life of >16 weeks in glass and PET at 4 degrees C.

Fermi surface nesting and structural transition on a metal surface: In /Cu(001).

Peierls-type instability and structural phase transition are shown to occur on the surface of a normal metal. An In overlayer on Cu(001) undergoes a reversible transition at approximately 350 K. Scanning tunneling microscopy of the low-temperature, reduced-symmetry phase indicates a strong periodic lattice distortion (PLD). Angle-resolved photoemission of the high-temperature phase reveals that the In-derived surface resonance constitutes a square-shaped, quasi-two-dimensional Fermi surface within the projected bulk Cu bands. The Fermi surface exhibits one-dimensional nesting upon the transition, which is in agreement with the PLD periodicity.

Effects of pulsed electric fields on the quality of orange juice and comparison with heat pasteurization.

Effects of pulsed electric fields (PEF) at 35 kV/cm for 59 micros on the quality of orange juice were investigated and compared with those of heat pasteurization at 94.6 degrees C for 30 s. The PEF treatment prevented the growth of microorganisms at 4, 22, and 37 degrees C for 112 days and inactivated 88% of pectin methyl esterase (PME) activity. The PEF-treated orange juice retained greater amounts of vitamin C and the five representative flavor compounds than the heat-pasteurized orange juice during storage at 4 degrees C (p < 0.05). The PEF-treated orange juice had lower browning index, higher whiteness (L), and higher hue angle (theta) values than the heat-pasteurized orange juice during storage at 4 degrees C (p < 0. 05). The PEF-treated orange juice had a smaller particle size than the heat-pasteurized orange juice (p < 0.05). degrees Brix and pH values were not significantly affected by processing methods (p > 0. 05).