Angle-based wavefront sensing enabled by the near fields of flat optics.

There is a long history of using angle sensors to measure wavefront. The best example is the Shack-Hartmann sensor. Compared to other methods of wavefront sensing, angle-based approach is more broadly used in industrial applications and scientific research. Its wide adoption is attributed to its fully integrated setup, robustness, and fast speed. However, there is a long-standing issue in its low spatial resolution, which is limited by the size of the angle sensor. Here we report a angle-based wavefront sensor to overcome this challenge. It uses ultra-compact angle sensor built from flat optics. It is directly integrated on focal plane array. This wavefront sensor inherits all the benefits of the angle-based method. Moreover, it improves the spatial sampling density by over two orders of magnitude. The drastically improved resolution allows angle-based sensors to be used for quantitative phase imaging, enabling capabilities such as video-frame recording of high-resolution surface topography.

Single-shot on-chip spectral sensors based on photonic crystal slabs.

Miniaturized spectrometers have significant potential for portable applications such as consumer electronics, health care, and manufacturing. These applications demand low cost and high spectral resolution, and are best enabled by single-shot free-space-coupled spectrometers that also have sufficient spatial resolution. Here, we demonstrate an on-chip spectrometer that can satisfy all of these requirements. Our device uses arrays of photodetectors, each of which has a unique responsivity with rich spectral features. These responsivities are created by complex optical interference in photonic-crystal slabs positioned immediately on top of the photodetector pixels. The spectrometer is completely complementary metal-oxide-semiconductor (CMOS) compatible and can be mass produced at low cost.

Author Correction: Subwavelength angle-sensing photodetectors inspired by directional hearing in small animals.

In the version of this Letter originally published, Zongfu Yu was mistakenly not noted as being a corresponding author; this has now been corrected in all versions of the Letter.

Subwavelength angle-sensing photodetectors inspired by directional hearing in small animals.

Sensing the direction of sounds gives animals clear evolutionary advantage. For large animals, with an ear-to-ear spacing that exceeds audible sound wavelengths, directional sensing is simply accomplished by recognizing the intensity and time differences of a wave impinging on its two ears1. Recent research suggests that in smaller, subwavelength animals, angle sensing can instead rely on a coherent coupling of soundwaves between the two ears2-4. Inspired by this natural design, here we show a subwarvelength photodetection pixel that can measure both the intensity and incident angle of light. It relies on an electrical isolation and optical coupling of two closely spaced Si nanowires that support optical Mie resonances5-7. When these resonators scatter light into the same free-space optical modes, a non-Hermitian coupling results that affords highly sensitive angle determination. By straightforward photocurrent measurements, we can independently quantify the stored optical energy in each nanowire and relate the difference in the stored energy between the wires to the incident angle of a light wave. We exploit this effect to fabricate a subwavelength angle-sensitive pixel with angular sensitivity, δθ = 0.32°.

Enhanced Performance of Ge Photodiodes via Monolithic Antireflection Texturing and α-Ge Self-Passivation by Inverse Metal-Assisted Chemical Etching.

Surface antireflection micro and nanostructures, normally formed by conventional reactive ion etching, offer advantages in photovoltaic and optoelectronic applications, including wider spectral wavelength ranges and acceptance angles. One challenge in incorporating these structures into devices is that optimal optical properties do not always translate into electrical performance due to surface damage, which significantly increases surface recombination. Here, we present a simple approach for fabricating antireflection structures, with self-passivated amorphous Ge (α-Ge) surfaces, on single crystalline Ge (c-Ge) surface using the inverse metal-assisted chemical etching technology (I-MacEtch). Vertical Schottky Ge photodiodes fabricated with surface structures involving arrays of pyramids or periodic nano-indentations show clear improvements not only in responsivity, due to enhanced optical absorption, but also in dark current. The dark current reduction is attributed to the Schottky barrier height increase and self-passivation effect of the i-MacEtch induced α-Ge layer formed on top of the c-Ge surface. The results demonstrated in this work show that MacEtch can be a viable technology for advanced light trapping and surface engineering in Ge and other semiconductor based optoelectronic devices.

A multiple-resonator approach for broadband light absorption in a single layer of nanostructured graphene.

The interaction between two-dimensional (2D) materials and light is rather weak due to their ultrathin thickness. In order for these emerging 2D materials to achieve performances that are comparable to those of conventional optoelectronic devices, the light-material interaction must be significantly enhanced. An effective way to enhance the interaction is to use optical resonances. Efficient light absorption has been demonstrated in a single layer of graphene based on a variety of resonators. However, the bandwidth of the absorption enhancement is always narrow, which limits its application for optoelectronic devices. In order to broaden the enhancement of light-material interaction, here we propose a multiple-resonator approach based on nanostructured graphene. These nanostructures having different geometry support resonances at different frequencies. Owing to their deep subwavelength sizes, graphene resonators can be closely packed in space, resulting in a high optical density of states, which enables the broadband light absorption.