Sharp Transformation across Morphotropic Phase Boundary in Sub-6 nm Wake-Up-Free Ferroelectric Films by Atomic Layer Technology.

Atomic layer engineering is investigated to tailor the morphotropic phase boundary (MPB) between antiferroelectric, ferroelectric, and paraelectric phases. By increasing the HfO2 seeding layer with only 2 monolayers, the overlying ZrO2 layer experiences the dramatic phase transition across the MPB. Conspicuous ferroelectric properties including record-high remanent polarization (2Pr ≈ 60 µC cm-2 ), wake-up-free operation, and high compatibility with advanced semiconductor technology nodes, are achieved in the sub-6 nm thin film. The prominent antiferroelectric to ferroelectric phase transformation is ascribed to the in-plane tensile stress introduced into ZrO2 by the HfO2 seeding layer. Based on the high-resolution and high-contrast images of surface grains extracted precisely by helium ion microscopy, the evolution of the MPB between tetragonal, orthorhombic, and monoclinic phases with grain size is demonstrated for the first time. The result indicates that a decrease in the average grain size drives the crystallization from the tetragonal to polar orthorhombic phases.

AlN epitaxy on SiC by low-temperature atomic layer deposition via layer-by-layer, in situ atomic layer annealing.

AlN thin films were epitaxially grown on a 4H-SiC substrate via atomic layer deposition (ALD) along with atomic layer annealing (ALA). By applying the layer-by-layer, in situ ALA treatment using helium/argon plasma in each ALD cycle, the as-deposited film gets crystallization energy from the plasma, which results in significant enhancement of the crystal quality to achieve a highly crystalline AlN epitaxial layer at a deposition temperature as low as 300 °C. In a nanoscale AlN epitaxial layer with a thickness of ∼30 nm, X-ray diffraction reveals a low full-width-at-half-maximum of the AlN (0002) peak of only 176.4 arcsec. Atomic force microscopy, high-resolution transmission electron microscopy, and Fourier diffractograms indicate a smooth surface and high-quality hetero-epitaxial growth of a nanoscale AlN layer on 4H-SiC. This research demonstrates the impact of the ALA treatment on the evolution of ALD techniques from conventional thin film deposition to low-temperature atomic layer epitaxy.

Treatment of ipsilateral femoral neck and shaft fractures / 中华创伤杂志(英文版)

<p><b>OBJECTIVE</b>To investigate the clinical characteristics, treatment options and causes of misdiagnosis of ipsilateral femoral neck and shaft fractures.</p><p><b>METHODS</b>Among 20 patients with ipsilateral femoral neck and shaft fractures, 19 were treated operatively and 1 was treated conservatively. Sixteen cases of femoral shaft fractures were treated by open reduction and internal fixation with compressive plate, and 2 cases were treated with interlocking intramedullary nailing. Eighteen femoral neck fractures were treated with cannulated screws. Another patient was treated with proximal femoral nail to fix both the neck and shaft. Delayed diagnosis for femoral neck fractures occurred in 2 cases preoperatively.</p><p><b>RESULTS</b>A total of 19 patients were followed up. The follow up period ranged from 5 to 48 months with an average of 15 months. All the fractures were healed.</p><p><b>CONCLUSION</b>For case of femoral shaft fracture caused by high energy injury, an AP pelvic film should be routinely taken. Once the femoral neck fracture is recognized, operative reduction and fixation should be performed in time. Femoral neck and shaft fractures should be fixed separately.</p>