Highly sensitive "off-on" sensor based on MXene and magnetic microspheres for simultaneous detection of lung cancer biomarkers - Neuron specific enolase and carcinoembryonic antigen.

In this work, a highly sensitive lung cancer biomarkers detection probe was developed based on Ag and MXene co-functionalized magnetic microspheres. By using carboxyl magnetic microspheres as carrier, MXene was coated repeatedly by Poly (allylamine hydrochloride) (PAH) as interlayer adhesive, and silver particles grown on the surface of MXene in situ can efficiently improve the sensitivity of the probe. The detection of neuron specific enolase (NSE) is mainly through the formation of a specific complex between NSE antigen and antibody, and the release of antibody labeled with amino carbon quantum dots (CQDs) from the surface of Ag nanoparticles (AgNPs), so that the fluorescence is restored and "OFF-ON" is formed. The biosensor exhibits excellently wide linear range (0.0001-1500 ng/mL) and the limit of detection (LOD) is up to 0.03 pg/mL, which is superior to most tumor marker probes based on fluorescence mechanism. Furthermore, we constructed dual detection strategy for NSE and carcinoembryonic antigen (CEA) simultaneously.

SEU Hardened D Flip-Flop Design with Low Area Overhead.

D flip-flop (DFF) is the basic unit of sequential logic in digital circuits. However, because of an internal cross-coupled inverter pair, it can easily appear as a single event upset (SEU) when hit by high-energy particles, resulting in the error in the value stored in the flip-flop. On this basis, a new structure D flip-flop is proposed in this paper. This flip-flop uses an asymmetric scheme in which the master-slave latch adopts different hardening structures. By sacrificing circuit speed in exchange for stronger SEU fortification capability, the SEU threshold of this structure is improved by 10 times compared to traditional D flip-flops. It has also been compared with Dual Interlocked Storage Elements (DICEs), and it saves the area cost of six transistors compared to the DICE structure. Under the same operating conditions, the average power consumption and peak power consumption are, respectively, 9.8% and 18.8% lower than those of the DICE circuit, making it suitable for soft radiation environments where high circuit speed is not a critical requirement.

Single Event Upset Study of 22 nm Fully Depleted Silicon-on-Insulator Static Random Access Memory with Charge Sharing Effect.

In this paper, the single event effect of 6T-SRAM is simulated at circuit level and device level based on a 22 nm fully depleted silicon-on-insulator (FDSOI) process, and the effects of charge sharing and bipolar amplification are considered in device-level simulation. The results demonstrate that, under the combined influence of these two effects, the circuit's upset threshold and critical charge decreased by 15.4% and 23.5%, respectively. This indicates that the charge sharing effect exacerbates the single event effects. By analyzing the incident conditions of two different incident radius particles, it is concluded that the particles with a smaller incident radius have a worse impact on the SRAM circuit, and are more likely to cause the single event upset in the circuit, indicating that the ionization distribution generated by the incident particle affects the charge collection.

Simulation of Total Ionizing Dose Effects Technique for CMOS Inverter Circuit.

The total ionizing dose (TID) effect significantly impacts the electrical parameters of fully depleted silicon on insulator (FDSOI) devices and even invalidates the on-off function of devices. At present, most of the irradiation research on the circuit level is focused on the single event effect, and there is very little research on the total ionizing dose effect. Therefore, this study mainly analyzes the influence of TID effects on a CMOS inverter circuit based on 22 nm FDSOI transistors. First, we constructed and calibrated an N-type FDSOI metal-oxide semiconductor (NMOS) structure and P-type FDSOI metal-oxide semiconductor (PMOS) structure. The transfer characteristics and trapped charge distribution of these devices were studied under different irradiation doses. Next, we studied the TID effect on an inverter circuit composed of these two MOS transistors. The simulation results show that when the radiation dose was 400 krad (Si), the logic threshold drift of the inverter was approximately 0.052 V. These results help further investigate the impact on integrated circuits in an irradiation environment.

High-Performance and Flexible Design Scheme with ECC Protection in the Cache.

To improve the reliability of static random access memory (SRAM), error-correcting codes (ECC) are typically used to protect SRAM in the cache. While improving the reliability, we also need additional circuits to support ECC, including encoding and decoding logic. In a high-speed circuit such as a CPU, the L1 cache maintains the same frequency as the CPU, and the decoding of the ECC codes in the cache consumes considerable combinational logic, resulting in limited frequency and performance. This study proposes a high-performance and flexible design scheme with ECC protection in the cache, in which the cache has two working modes: a high-performance mode and a high-reliability mode. The high-performance mode uses simple ECC codes, which can maintain high frequency with low access latency. The high-reliability mode uses more complex ECC codes, which improves the error correction capability and enhances the reliability of the SRAM. To meet the application requirements of different scenarios, the proposed scheme supports the software in switching between the above two modes by configuring the register, which improves the flexibility of the system. The results of synthesis show that the theoretical maximum frequency of proposed ECC design scheme increased from approximately 1.4 GHz in the conventional ECC design scheme to approximately 2.2 GHz. Some of the error correction capability of the high-performance mode is traded off against a 57% increase in frequency. In the high-reliability mode, the error correction capability of the SRAM is enhanced; however, the latency of accessing the cache increases by one cycle.

A Novel L-Gate InGaAs/GaAsSb TFET with Improved Performance and Suppressed Ambipolar Effect.

A heterojunction tunneling field effect transistor with an L-shaped gate (HJ-LTFET), which is very applicable to operate at low voltage, is proposed and studied by TCAD tools in this paper. InGaAs/GaAsSb heterojunction is applied in HJ-LTFET to enhance the ON-state current (ION). Owing to the quasi-broken gap energy band alignment of InGaAs/GaAsSb heterojunction, height and thickness of tunneling barrier are greatly reduced. However, the OFF-state leakage current (IOFF) also increases significantly due to the reduced barrier height and thickness and results in an obvious source-to-drain tunneling (SDT). In order to solve this problem, an HfO2 barrier layer is inserted between source and drain. Result shows that the insertion layer can greatly suppress the horizontal tunneling leakage appears at the source and drain interface. Other optimization studies such as work function modulation, doping concentration optimization, scaling capability, and analog/RF performance analysis are carried out, too. Finally, the HJ-LTFET with a large ION of 213 µA/µm, a steep average SS of 8.9 mV/dec, and a suppressed IOFF of 10-12 µA/µm can be obtained. Not only that, but the fT and GBP reached the maximum values of 68.3 GHz and 7.3 GHz under the condition of Vd = 0.5 V, respectively.

Polarization Gradient Effect of Negative Capacitance LTFET.

In this paper, an L-shaped tunneling field effect transistor (LTFET) with ferroelectric gate oxide layer (Si: HfO2) is proposed. The electric characteristic of NC-LTFET is analyzed using Synopsys Sentaurus TCAD. Compared with the conventional LTFET, a steeper subthreshold swing (SS = 18.4 mV/dec) of NC-LTFET is obtained by the mechanism of line tunneling at low gate voltage instead of diagonal tunneling, which is caused by the non-uniform voltage across the gate oxide layer. In addition, we report the polarization gradient effect in a negative capacitance TFET for the first time. It is noted that the polarization gradient effect should not be ignored in TFET. When the polarization gradient parameter g grows larger, the dominant tunneling mechanism that affects the SS is the diagonal tunneling. The on-state current (Ion) and SS of NC-LTFET become worse.

Ultrasensitive Detection of Pb2+ Based on a DNAzyme and Digital PCR.

In this study, an ultrasensitive detection method for aqueous Pb2+ based on digital polymerase chain reaction (dPCR) technology and a Pb2+-dependent DNAzyme was developed. In the presence of Pb2+, the Gr-5 DNAzyme was activated and catalyzed the hydrolytic cleavage of the substrate strand, resulting in an increase in the amount of template DNA available for dPCR and a resultant change in the number of droplets showing a positive signal. Moreover, the detection system was found to be sensitive and stable in environmental sample detection. In summary, an ultrasensitive quantitative detection method for Pb2+ within environmental substrates was established.

Effects of Target Temperature Management on the Outcome of Septic Patients with Fever.

OBJECTIVES: To investigate the effects of target temperature management on hemodynamic changes, inflammatory and immune factors, and clinical outcomes of sepsis patients with fever. METHODS: Patients diagnosed with sepsis with a core temperature of ≥39°C were randomly divided into two groups: a low-temperature group (LT group: 36.5°C-38°C) and a high-temperature group (HT group: 38.5°C-39.5°C). A target core temperature was achieved within 6 hrs posttreatment and maintained for 24 hrs. Then, the hemodynamic changes, inflammatory and immune factors, and clinical outcomes were evaluated. RESULTS: Compared with the HT group, C-reactive protein (CRP), procalcitonin (PCT), interleukin-6 (IL-6), and tumor necrosis factor-α (TNF-α) showed a significant decrease in the LT group (P < 0.05). In contrast, IL-4 and IL-10 were higher in the LT group than in the HT group (P < 0.05). The CD4-T lymphocyte (CD4+), CD8-T lymphocyte (CD8+), and monocytic human leukocyte antigen-DR (mHLA-DR) in the LT group were higher than in the HT group (P < 0.05). The ICU stay and the anti-infection treatment costs were higher in the LT group (P < 0.05). CONCLUSION: Low-temperature management of patients resulted in a low level of proinflammatory cytokines. Excessive temperature control in sepsis patients with fever may be harmful.

Potentially functional polymorphism in IL-23 receptor and risk of acute myeloid leukemia in a Chinese population.

The interleukin-23 (IL-23) and its receptor (IL-23R) mediate the direct antitumor activities in human hematologic malignancies including pediatric acute leukemia. Two potentially functional genetic variants (IL-23R rs1884444 T>G and rs6682925 T>C) have been found to contribute to solid cancer susceptibility. In this study, we conducted a case-control study including 545 acute myeloid leukemia (AML) patients and 1,146 cancer-free controls in a Chinese population to assess the association between these two SNPs and the risk of AML. We found that IL-23R rs1884444 TG/GG and rs6682925 TC/CC variant genotypes were associated with significantly increased risk of AML [rs1884444: adjusted odds ratio (OR) = 1.28, 95% confidence interval (CI) = 1.01-1.62; rs6682925: adjusted OR = 1.30, 95%CI = 1.01-1.67], compared to their corresponding wild-type homozygotes, respectively. These findings indicated that genetic variants in IL-23R may contribute to AML risk in our Chinese population.

[Research advances on correlation of ARID5B gene with childhood acute lymphoblastic leukemia - review].

Childhood acute lymphoblastic leukemia (C-ALL) is the most common pediatric cancer. Although its etiology remains poorly understood, the hypothesis of ALL correlated with a genetic basis was examined through association studies based on candidate genes. Recently, two independent large-scale genome-wide association studies reported that the five single nucleotide polymorphisms (rs7073837; rs10821936; rs10994982; rs7089424; rs10740055) in the gene AT rich interactive domain 5B (ARID5B) at 10q21.2, were associated with the high incidence risk of C-ALL, especially with hyperdiploid lymphoblastic leukemia. Variations in these single nucleotide polymorphisms influence the risk of specific disease subtypes, and also possess race- and sex-differences in leukemia incidence. Further elucidation of the mechanisms through which ARID5B variants are involved in C-ALL not only has a great diagnostic value, but also a guidance for the clinical therapy, ultimately improving the prognosis of disease. Therefore, the related studies of ARID5B with C-ALL were summarized briefly in this review.