MAX-Phase Films Overcome Scaling Limitations to the Resistivity of Metal Thin Films.

Metal thin films have been widely used as conductors in semiconductor devices for several decades. However, the resistivity of metal thin films such as Cu and TiN increases substantially (>1000%) as they become thinner (<10 nm) when using high-density integration to improve device performance. In this study, the resistivities of MAX-phase V2AlC films grown on sapphire substrates exhibited a significantly weaker dependence on the film thickness than conventional metal films that resulted in a resistivity increase of only 30%, as the V2AlC film thickness decreased from approximately 45 to 5 nm. The resistivity was almost identical for film thicknesses of 10-50 nm. The small change in the resistivity of V2AlC films with decreasing film thickness originated from the highly ordered crystalline quality and a small electron mean free path (11-13.6 nm). Thus, MAX-phase thin films have great potential for advanced metal technology applications to overcome the current scaling limitations of semiconductor devices.

Morphology engineering of ZnO nanostructures for high performance supercapacitors: enhanced electrochemistry of ZnO nanocones compared to ZnO nanowires.

In this work, the morphology of ZnO nanostructures is engineered to demonstrate enhanced supercapacitor characteristics of ZnO nanocones (NCs) compared to ZnO nanowires (NWs). ZnO NCs are obtained by chemically etching ZnO NWs. Electrochemical characteristics of ZnO NCs and NWs are extensively investigated to demonstrate morphology dependent capacitive performance of one dimensional ZnO nanostructures. Cyclic voltammetry measurements on these two kinds of electrodes in a three-electrode cell confirms that ZnO NCs exhibit a high specific capacitance of 378.5 F g-1 at a scan rate of 20 mV s-1, which is almost twice that of ZnO NWs (191.5 F g-1). The charge-discharge and electrochemical impedance spectroscopy measurements also clearly result in enhanced capacitive performance of NCs as evidenced by higher specific capacitances and lower internal resistance. Asymmetric supercapacitors are fabricated using activated carbon (AC) as the negative electrode and ZnO NWs and NCs as positive electrodes. The ZnO NC⫽AC can deliver a maximum specific capacitance of 126 F g-1 at a current density of 1.33 A g-1 with an energy density of 25.2 W h kg-1 at the power density of 896.44 W kg-1. In contrast, ZnO NW⫽AC displays 63% of the capacitance obtained from the ZnO NC⫽AC supercapacitor. The enhanced performance of NCs is attributed to the higher surface area of ZnO nanostructures after the morphology is altered from NWs to NCs.

Directly patternable, highly conducting polymers for broad applications in organic electronics.

Postdeposition solvent annealing of water-dispersible conducting polymers induces dramatic structural rearrangement and improves electrical conductivities by more than two orders of magnitude. We attain electrical conductivities in excess of 50 S/cm when polyaniline films are exposed to dichloroacetic acid. Subjecting commercially available poly(ethylene dioxythiophene) to the same treatment yields a conductivity as high as 250 S/cm. This process has enabled the wide incorporation of conducting polymers in organic electronics; conducting polymers that are not typically processable can now be deposited from solution and their conductivities subsequently enhanced to practical levels via a simple and straightforward solvent annealing process. The treated conducting polymers are thus promising alternatives for metals as source and drain electrodes in organic thin-film transistors as well as for transparent metal oxide conductors as anodes in organic solar cells and light-emitting diodes.