Hybrid Photoiniferter and Ring-Opening Polymerization Yields One-Pot Anisotropic Nanorods.

Polymerization-induced self-assembly (PISA) has emerged as a scalable one-pot technique to prepare block copolymer (BCP) nanoparticles. Recently, a PISA process, that results in poly(l-lactide)-b-poly(ethylene glycol) BCP nanoparticles coined ring-opening polymerization (ROP)-induced crystallization-driven self-assembly (ROPI-CDSA), was developed. The resulting nanorods demonstrate a strong propensity for aggregation, resulting in the formation of 2D sheets and 3D networks. This article reports the synthesis of poly(N,N-dimethyl acrylamide)-b-poly(l)-lactide BCP nanoparticles by ROPI-CDSA, utilizing a two-step, one-pot approach. A dual-functionalized photoiniferter is first used for controlled radical polymerization of the acrylamido-based monomer, and the resulting polymer serves as a macroinitiator for organocatalyzed ROP to form the solvophobic polyester block. The resulting nanorods are highly stable and display anisotropy at higher molecular weights (>12k Da) and concentrations (>20% solids) than the previous report. This development expands the chemical scope of ROPI-CDSA BCPs and provides readily accessible nanorods made with biocompatible materials.

Investigation of Program Efficiency Overshoot in 3D Vertical Channel NAND Flash with Randomly Distributed Traps.

The incremental step pulse programming slope (ISPP) with random variation was investigated by measuring numerous three-dimensional (3D) NAND flash memory cells with a vertical nanowire channel. We stored multiple bits in a cell with the ISPP scheme and read each cell pulse by pulse. The excessive tunneling from the channel to the storage layer determines the program efficiency overshoot. Then, a broadening of the threshold voltage distribution was observed due to the abnormal program cells. To analyze the randomly varying abnormal program behavior itself, we distinguished between the read variation and over-programming in measurements. Using a 3D Monte-Carlo simulation, which is a probabilistic approach to solve randomness, we clarified the physical origins of over-programming that strongly influence the abnormal program cells in program step voltage, and randomly distributed the trap site in the nitride of a nanoscale 3D NAND string. These causes have concurrent effects, but we divided and analyzed them quantitatively. Our results reveal the origins of the variation and the overshoot in the ISPP, widening the threshold voltage distribution with traps randomly located at the nanoscale. The findings can enhance understanding of random over-programming and help mitigate the most problematic programming obstacles for multiple-bit techniques.

Sensitivity of Inner Spacer Thickness Variations for Sub-3-nm Node Silicon Nanosheet Field-Effect Transistors.

The inner spacer thickness (TIS) variations in sub-3-nm, node 3-stacked, nanosheet field-effect transistors (NSFETs) were investigated using computer-aided design simulation technology. Inner spacer formation requires a high selectivity of SiGe to Si, which causes inevitable TIS variation (ΔTIS). The gate length (LG) depends on the TIS. Thus, the DC/AC performance is significantly affected by ΔTIS. Because the effects of ΔTIS on the performance depend on which inner spacer is varied, the sensitivities of the performance to the top, middle, and bottom (T, M, and B, respectively) ΔTIS should be studied separately. In addition, the source/drain (S/D) recess process variation that forms the parasitic bottom transistor (trpbt) should be considered with ΔTIS because the gate controllability over trpbt is significantly dependent on ΔTIS,B. If the S/D recess depth (TSD) variation cannot be completely eliminated, reducing ΔTIS,B is crucial for suppressing the effects of trpbt. It is noteworthy that reducing ΔTIS,B is the most important factor when the TSD variation occurs, whereas reducing ΔTIS,T and ΔTIS,M is crucial in the absence of TSD variation to minimize the DC performance variation. As the TIS increases, the gate capacitance (Cgg) decreases owing to the reduction in both parasitic and intrinsic capacitance, but the sensitivity of Cgg to each ΔTIS is almost the same. Therefore, the difference in performance sensitivity related to AC response is also strongly affected by the DC characteristics. In particular, since TSD of 5 nm increases the off-state current (Ioff) sensitivity to ΔTIS,B by a factor of 22.5 in NFETs, the ΔTIS,B below 1 nm is essential for further scaling and yield enhancement.

Optimal Energetic-Trap Distribution of Nano-Scaled Charge Trap Nitride for Wider Vth Window in 3D NAND Flash Using a Machine-Learning Method.

A machine-learning (ML) technique was used to optimize the energetic-trap distributions of nano-scaled charge trap nitride (CTN) in 3D NAND Flash to widen the threshold voltage (Vth) window, which is crucial for NAND operation. The energetic-trap distribution is a critical material property of the CTN that affects the Vth window between the erase and program Vth. An artificial neural network (ANN) was used to model the relationship between the energetic-trap distributions as an input parameter and the Vth window as an output parameter. A well-trained ANN was used with the gradient-descent method to determine the specific inputs that maximize the outputs. The trap densities (NTD and NTA) and their standard deviations (σTD and σTA) were found to most strongly impact the Vth window. As they increased, the Vth window increased because of the availability of a larger number of trap sites. Finally, when the ML-optimized energetic-trap distributions were simulated, the Vth window increased by 49% compared with the experimental value under the same bias condition. Therefore, the developed ML technique can be applied to optimize cell transistor processes by determining the material properties of the CTN in 3D NAND Flash.

Novel Modeling Approach to Analyze Threshold Voltage Variability in Short Gate-Length (15-22 nm) Nanowire FETs with Various Channel Diameters.

In this study, threshold voltage (Vth) variability was investigated in silicon nanowire field-effect transistors (SNWFETs) with short gate-lengths of 15-22 nm and various channel diameters (DNW) of 7, 9, and 12 nm. Linear slope and nonzero y-intercept were observed in a Pelgrom plot of the standard deviation of Vth (σVth), which originated from random and process variations. Interestingly, the slope and y-intercept differed for each DNW, and σVth was the smallest at a median DNW of 9 nm. To analyze the observed DNW tendency of σVth, a novel modeling approach based on the error propagation law was proposed. The contribution of gate-metal work function, channel dopant concentration (Nch), and DNW variations (WFV, ∆Nch, and ∆DNW) to σVth were evaluated by directly fitting the developed model to measured σVth. As a result, WFV induced by metal gate granularity increased as channel area increases, and the slope of WFV in Pelgrom plot is similar to that of σVth. As DNW decreased, SNWFETs became robust to ∆Nch but vulnerable to ∆DNW. Consequently, the contribution of ∆DNW, WFV, and ∆Nch is dominant at DNW of 7 nm, 9 nm, and 12, respectively. The proposed model enables the quantifying of the contribution of various variation sources of Vth variation, and it is applicable to all SNWFETs with various LG and DNW.

Comparison of sampling methods in assessing the microbiome from patients with ulcerative colitis.

BACKGROUND: Dysbiosis of ulcerative colitis (UC) has been frequently investigated using readily accessible stool samples. However, stool samples might insufficiently represent the mucosa-associated microbiome status. We hypothesized that luminal contents including loosely adherent luminal bacteria after bowel preparation may be suitable for diagnosing the dysbiosis of UC. METHODS: This study included 16 patients with UC (9 men and 7 women, mean age: 52.13 ± 14.09 years) and 15 sex- and age-matched healthy individuals (8 men and 7 women, mean age: 50.93 ± 14.11 years). They donated stool samples before colonoscopy and underwent luminal content aspiration and endoscopic biopsy during the colonoscopy. Then, the composition of each microbiome sample was analyzed by 16S rRNA-based next-generation sequencing. RESULTS: The microbiome between stool, luminal contents, and biopsy was significantly different in alpha and beta diversities. However, a correlation existed between stool and luminal contents in the Procrustes test (p = 0.001) and Mantel test (p = 0.0001). The stool microbiome was different between patients with UC and the healthy controls. Conversely, no difference was found in the microbiome of luminal content and biopsy samples between the two subject groups. The microbiome of stool and lavage predicted UC, with AUC values of 0.85 and 0.81, respectively. CONCLUSION: The microbiome of stool, luminal contents, and biopsy was significantly different. However, the microbiome of luminal contents during colonoscopy can predict UC, with AUC values of 0.81. Colonoscopic luminal content aspiration analysis could determine microbiome differences between patients with UC and the healthy control, thereby beneficial in screening dysbiosis via endoscopy. TRIAL REGISTRATION: This trial was registered at http://cris.nih.go.kr . Registration No.: KCT0003352), Date: 2018-11-13.

PROKR1 delivery by cell-derived vesicles restores the myogenic potential of Prokr1-deficient C2C12 myoblasts.

Cell-derived vesicles (CDVs) have been investigated as an alternative to exosomes. Here, we generated CDVs from Prokineticin receptor 1 (PROKR1) overexpressing HEK293T cells using micro-extrusion. More than 60 billion PROKR1-enriched CDV (PROKR1Tg CDVs) particles with canonical exosome properties were recovered from 107 cells. With 25 µg/mL of PROKR1Tg CDVs, we observed delivery of PROKR1, significant reduction of apoptosis, and myotube formation in C2C12Prokr1-/- myoblasts that have lost their myogenic potential but underwent apoptosis following myogenic commitment. Expression levels of early and late myogenic marker genes and glucose uptake capacity were restored to equivalent levels with wild-type control. Furthermore, PROKR1Tg CDVs were accumulated in soleus muscle comparable to the liver without significant differences. Therefore, CDVs obtained from genetically engineered cells appear to be an effective method of PROKR1 protein delivery and offer promise as an alternative therapy for muscular dystrophy.

Threshold Voltage Variations Induced by Si1-xGex and Si1-xCx of Sub 5-nm Node Silicon Nanosheet Field-Effect Transistors.

In this paper, we investigated the threshold voltage (Vth) variations in sub 5-nm node silicon nanosheet FETs (NSFETs) caused by Ge and C diffusion into NS channels using fully-calibrated 3-D TCAD simulation. Ge (C) atoms of Si1-xGex (Si1-xCx) source/drain (S/D) diffuse toward the NS channels in lateral direction in p-type (n-type) FETs, and Ge atoms of Si0.7Ge0.3 stacks diffuse toward the NS channels in vertical direction. Increasing Ge mole fraction of the Si1-xGex S/D in the p-type FETs (PFETs) causing increasing compressive channel stress retards boron dopants diffusing from the Si1-xGex S/D into the NS channels, thus increasing the Vth of PFETs (Vth, p). However, the Vth, p decreases as the Ge mole fraction of the Si1-xGex S/D becomes greater than 0.5 due to the higher valence band energy (Ev) of the NS channels. On the other hand, the Vth of n-type FETs (NFETs) (Vth, n) consistently increases as the C mole fraction of the Si1-xCx S/D increases due to monotonously retarded phosphorus dopants diffusing from the Si1-xCx S/D into the NS channels. On the other hand, the Vth, p and Vth, n consistently decreases and increases, respectively, as Si/Si0.7Ge0.3 intermixing becomes severer because both Ev and conduction band energies (Ec) of the NS channels become higher. In addition, the Vth, p variations are more sensitive to the Si/Si0.7Ge0.3 intermixing than the Vth, n variations because the Ge mole fraction in NS channels affects the Ev remarkably rather than the Ec. As a result, the Ge atoms diffusing toward the NS channels should be carefully considered more than the C diffusion toward the NS channels for fine Vth variation optimization in sub 5-nm node NSFETs.

Overcoming ineffective resistance modulation in p-type NiO gas sensor by nanoscale Schottky contacts.

We present a gas sensor having nanoscale Schottky contacts on an array of helical-shaped p-type NiO to overcome intrinsically ineffective resistance modulation in the bulk of p-type metal oxides upon gas exposure. The Schottky device shows an abnormal n-type sensing behavior despite using the p-type NiO under reducing gas, with the sensitivity of 142.9% at 200 ppm of hydrogen, much higher than the reference Ohmic device with 0.7% sensitivity. Based on our equivalent circuit model with the quantitative estimation of the modulations in both carrier concentration and Schottky barrier height upon gas exposure, such a high sensitivity and the abnormal sensing behavior are attributed to the predominant modulation in the barrier height at the nanoscale Schottky contacts which are uniquely designed to have top-and-bottom electrodes configuration for efficient gas adsorption and sensitive Schottky barrier height modulation.

Core-shell homojunction silicon vertical nanowire tunneling field-effect transistors.

We propose three-terminal core-shell (CS) silicon vertical nanowire tunneling field-effect transistors (TFETs), which can be fabricated by conventional CMOS technology. CS TFETs show lower subthreshold swing (SS) and higher on-state current than conventional TFETs through their high surface-to-volume ratio, which increases carrier-tunneling region with no additional device area. The on-state current can be enhanced by increasing the nanowire height, decreasing equivalent oxide thickness (EOT) or creating a nanowire array. The off-state current is also manageable for power saving through selective epitaxial growth at the top-side nanowire region. CS TFETs with an EOT of 0.8 nm and an aspect ratio of 20 for the core nanowire region provide the largest drain current ranges with point SS values below 60 mV/dec and superior on/off current ratio under all operation voltages of 0.5, 0.7, and 1.0 V. These devices are promising for low-power applications at low fabrication cost and high device density.