ABSTRACT
Hermetic sealing is an important technology for isolating and protecting air-sensitive materials and is key in the development of foldable and stretchable electronic devices. Here we report an ultra gas-proof polymer hybrid thin layer prepared by filling the free volume of the polymer with Al2O3 using gas-phase atomic layer infiltration. The high-density polymer-inorganic hybrid shows extremely low gas transmission rate, below the detection limit of the Ca corrosion test (water vapor transmission rate <10-7 g m-2 day-1). Furthermore, because of the remarkable nanometer-scale thinness of the complete polymer-inorganic hybrid, it is highly flexible, which makes it useful for hermetic sealing of stretchable and foldable devices.
ABSTRACT
This work presents a novel barrier thin film based on an organic-inorganic nanolaminate, which consists of alternating nanolayers of self-assembled organic layers (SAOLs) and Al2O3. The SAOLs-Al2O3 nanolaminated films were deposited using a combination of molecular layer deposition and atomic layer deposition techniques at 80 °C. Modulation of the relative thickness ratio of the SAOLs and Al2O3 enabled control over the elastic modulus and stress in the films. Furthermore, the SAOLs-Al2O3 thin film achieved a high degree of mechanical flexibility, excellent transmittance (>95%), and an ultralow water-vapor transmission rate (2.99 × 10-7 g m-2 day-1), which represents one of the lowest permeability levels ever achieved by thin film encapsulation. On the basis of its outstanding barrier properties with high flexibility and transparency, the nanolaminated film was applied to a commercial OLEDs panel as a gas-diffusion barrier film. The results showed defect propagation could be significantly inhibited by incorporating the SAOLs layers, which enhanced the durability of the panel.
ABSTRACT
We report on the fabrication of N,N'-ditridecyl-perylene-3,4:9,10-tetracarboxylic diimide-C13 (PTCDI-C13), n-channel organic thin-film transistors (OTFTs) with 30 nm Al(2)O(3) whose surface has been un-modified or modified with hexamethyldisilazane (HMDS) and thin hydrophobic CYTOP. Among all the devices, the OTFTs with CYTOP-modified dielectrics exhibit the most superior device performance and stability. The optimum post-annealing temperature for organic n-channels on CYTOP was also found to be as low as 80 °C, although the post-annealing was previously implemented at 120-140 °C for PTCDI domain growth in general. The low temperature of 80 °C hardly damages the CYTOP/n-channel organic interface which is deformed at a temperature higher than the glass transition temperature of CYTOP (â¼110 °C). The pentacenequinone passivation layer turned out to be helpful to keep the interfacial trap density minimum, according to the photo-excited charge collection spectroscopy results for our 80 °C-annealed OTFTs with CYTOP-modified dielectrics.
ABSTRACT
We fabricated a new organic-inorganic hybrid superlattice film using molecular layer deposition [MLD] combined with atomic layer deposition [ALD]. In the molecular layer deposition process, polydiacetylene [PDA] layers were grown by repeated sequential adsorption of titanium tetrachloride and 2,4-hexadiyne-1,6-diol with ultraviolet polymerization under a substrate temperature of 100°C. Titanium oxide [TiO2] inorganic layers were deposited at the same temperatures with alternating surface-saturating reactions of titanium tetrachloride and water. Ellipsometry analysis showed a self-limiting surface reaction process and linear growth of the nanohybrid films. The transmission electron microscopy analysis of the titanium oxide cross-linked polydiacetylene [TiOPDA]-TiO2 thin films confirmed the MLD growth rate and showed that the films are amorphous superlattices. Composition and polymerization of the films were confirmed by infrared spectroscopy. The TiOPDA-TiO2 nanohybrid superlattice films exhibited good thermal and mechanical stabilities.PACS: 81.07.Pr, organic-inorganic hybrid nanostructures; 82.35.-x, polymerization; 81.15.-z, film deposition; 81.15.Gh, chemical vapor deposition (including plasma enhanced CVD, MOCVD, ALD, etc.).
