Abnormal Seebeck Effect in Vertically Stacked 2D/2D PtSe2 /PtSe2 Homostructure.

When a thermoelectric (TE) material is deposited with a secondary TE material, the total Seebeck coefficient of the stacked layer is generally represented by a parallel conductor model. Accordingly, when TE material layers of the same thickness are stacked vertically, the total Seebeck coefficient in the transverse direction may change in a single layer. Here, an abnormal Seebeck effect in a stacked two-dimensional (2D) PtSe2 /PtSe2 homostructure film, i.e., an extra in-plane Seebeck voltage is produced by wet-transfer stacking at the interface between the PtSe2 layers under a transverse temperature gradient is reported. This abnormal Seebeck effect is referred to as the interfacial Seebeck effect in stacked PtSe2 /PtSe2 homostructures. This effect is attributed to the carrier-interface interaction, and has independent characteristics in relation to carrier concentration. It is confirmed that the in-plane Seebeck coefficient increases as the number of stacked PtSe2 layers increase and observed a high Seebeck coefficient exceeding ≈188 µV K-1 at 300 K in a four-layer-stacked PtSe2 /PtSe2 homostructure.

Enhanced Transverse Seebeck Coefficients in 2D/2D PtSe2/MoS2 Heterostructures Using Wet-Transfer Stacking.

It is very challenging to estimate thermoelectric (TE) properties when applying millimeter-scale two-dimensional (2D) transition metal dichalcogenide (TMDC) materials to TE device applications, particularly their Seebeck coefficient due to their high intrinsic electrical resistance. This paper proposes an innovative approach to measure large transverse (i.e., in-plane) Seebeck coefficients for 2D TMDC materials by placing a low resistance (LR) semimetallic PtSe2 film on high-resistance (HR) semiconducting MoS2 (>10 MΩ), whose internal resistance is too high to measure the Seebeck coefficient, forming a heterojunction structure using wet-transfer stacking. The vertically stacked LR-PtSe2 (3 nm)/HR-MoS2 (12 nm) heterostructure film exhibits a high Seebeck coefficient > 190 µV/K up to 5 K temperature difference. This unusual behavior can be explained by an additional Seebeck effect induced at the interface between the LR-2D/HR-2D heterostructure. The proposed stacked LR-PtSe2/HR-MoS2 heterostructure film offers promising phenomena 2D/2D materials that enable innovative TE device applications.

Interface-Induced Seebeck Effect in PtSe2/PtSe2 van der Waals Homostructures.

The Seebeck effect refers to the production of an electric voltage when different temperatures are applied on a conductor, and the corresponding voltage-production efficiency is represented by the Seebeck coefficient. We report a Seebeck effect: thermal generation of driving voltage from the heat flowing in a thin PtSe2/PtSe2 van der Waals homostructure at the interface. We refer to the effect as the interface-induced Seebeck effect. By exploiting this effect by directly attaching multilayered PtSe2 over high-resistance PtSe2 thin films as a hybridized single structure, we obtained the highly challenging in-plane Seebeck coefficient of the PtSe2 films that exhibit extremely high resistances. This direct attachment further enhanced the in-plane thermal Seebeck coefficients of the PtSe2/PtSe2 van der Waals homostructure on sapphire substrates. Consequently, we successfully enhanced the in-plane Seebeck coefficients for the PtSe2 (10 nm)/PtSe2 (2 nm) homostructure approximately 42% compared to that of a pure PtSe2 (10 nm) layer at 300 K. These findings represent a significant achievement in understanding the interface-induced Seebeck effect and provide an effective strategy for promising large-area thermoelectric energy harvesting devices using two-dimensional transition metal dichalcogenide materials, which are ideal thermoelectric platforms with high figures of merit.

Extrinsic Surface Magnetic Anisotropy Contribution in Pt/Y3Fe5O12 Interface in Longitudinal Spin Seebeck Effect by Graphene Interlayer.

A recent study found that magnetization curves for Y3Fe5O12 (YIG) slab and thick films (>20 µm thick) differed from bulk system curves by their longitudinal spin Seebeck effect in a Pt/YIG bilayer system. The deviation was due to intrinsic YIG surface magnetic anisotropy, which is difficult to adopt extrinsic surface magnetic anisotropy even when in contact with other materials on the YIG surface. This study experimentally demonstrates evidence for extrinsic YIG surface magnetic anisotropy when in contact with a diamagnetic graphene interlayer by observing the spin Seebeck effect, directly proving intrinsic YIG surface magnetic anisotropy interruption. We show the Pt/YIG bilayer system graphene interlayer role using large area single and multilayered graphenes using the longitudinal spin Seebeck effect at room temperature, and address the presence of surface magnetic anisotropy due to magnetic proximity between graphene and YIG layer. These findings suggest a promising route to understand new physics of spin Seebeck effect in spin transport.

Giant Thermoelectric Seebeck Coefficients in Tellurium Quantum Wires Formed Vertically in an Aluminum Oxide Layer by Electrical Breakdown.

High efficiency thermoelectric (TE) materials still require high thermopower for energy harvesting applications. A simple elemental metallic semiconductor, tellurium (Te), has been considered critical to realize highly efficient TE conversion due to having a large effective band valley degeneracy. This paper demonstrates a novel approach to directly probe the out-of-plane Seebeck coefficient for one-dimensional Te quantum wires (QWs) formed locally in the aluminum oxide layer by well-controlled electrical breakdown at 300 K. Surprisingly, the out-of-plane Seebeck coefficient for these Te QWs ≈ 0.8 mV/K at 300 K. This thermopower enhancement for Te QWs is due to Te intrinsic nested band structure and enhanced energy filtering at Te/AO interfaces. Theoretical calculations support the enhanced high Seebeck coefficient for elemental Te QWs in the oxide layer. The local-probed observation and detecting methodology used here offers a novel route to designing enhanced thermoelectric materials and devices in the future.

Achieving Out-of-Plane Thermoelectric Figure of Merit ZT = 1.44 in a p-Type Bi2Te3/Bi0.5Sb1.5Te3 Superlattice Film with Low Interfacial Resistance.

Recently, low-dimensional superlattice films have attracted significant attention because of their low dimensionality and anisotropic thermoelectric (TE) properties such as the Seebeck coefficient, electrical conductivity, and thermal conductivity. For these superlattice structures, both electrons and phonons show highly anisotropic behavior and exhibit much stronger interface scattering in the out-of-plane direction of the films compared to the in-plane direction. However, no detailed information is available in the literature for the out-of-plane TE properties of the superlattice-based films. In this report, we present the out-of-plane Seebeck coefficient, thermal conductivity, and electrical properties of p-type Bi2Te3/Bi0.5Sb1.5Te3 (bismuth telluride/bismuth antimony telluride, BT/BST) superlattice films in the temperature range of 77-500 K. Because of the synergistic combination of the energy filtering effect and low interfacial resistance of the superlattice structure, an impressively high ZT of 1.44 was achieved at 400 K for the 200 nm-thick p-type BT/BST superlattice film, corresponding to a 43% ZT enhancement compared to the pristine p-BST films with the same thickness.

Control of phonon transport by the formation of the Al2O3 interlayer in Al2O3-ZnO superlattice thin films and their in-plane thermoelectric energy generator performance.

Recently, significant progress has been made in increasing the figure-of-merit (ZT) of various nanostructured materials, including thin-film and quantum dot superlattice structures. Studies have focused on the size reduction and control of the surface or interface of nanostructured materials since these approaches enhance the thermopower and phonon scattering in quantum and superlattice structures. Currently, bismuth-tellurium-based semiconductor materials are widely employed for thermoelectric (TE) devices such as TE energy generators and coolers, in addition to other sensors, for use at temperatures under 400 K. However, new and promising TE materials with enhanced TE performance, including doped zinc oxide (ZnO) multilayer or superlattice thin films, are also required for designing solid-state TE power generating devices with the maximum output power density and for investigating the physics of in-plane TE generators. Herein, we report the growth of Al2O3/ZnO (AO/ZnO) superlattice thin films, which were prepared by atomic layer deposition (ALD), and the evaluation of their electrical and TE properties. All the in-plane TE properties, including the Seebeck coefficient (S), electrical conductivity (σ), and thermal conductivity (κ), of the AO/ZnO superlattice (with a 0.82 nm-thick AO layer) and AO/ZnO films (with a 0.13 nm-thick AO layer) were evaluated in the temperature range 40-300 K, and the measured S, σ, and κ were -62.4 and -17.5 µV K-1, 113 and 847 (Ω cm)-1, and 0.96 and 1.04 W m-1 K-1, respectively, at 300 K. Consequently, the in-plane TE ZT factor of AO/ZnO superlattice films was found to be ∼0.014, which is approximately two times more than that of AO/ZnO films (ZT of ∼0.007) at 300 K. Furthermore, the electrical power generation efficiency of the TE energy generator consisting of four couples of n-AO/ZnO superlattice films and p-Bi0.5Sb1.5Te3 (p-BST) thin-film legs on the substrate was demonstrated. Surprisingly, the output power of the 100 nm-thick n-AO/ZnO superlattice film/p-BST TE energy generator was determined to be ∼1.0 nW at a temperature difference of 80 K, corresponding to a significant improvement of ∼130% and ∼220% compared to the 100 nm-thick AO/ZnO film/p-BST and n-BT/p-BST film generators, respectively, owing to the enhancement of the TE properties, including the power factor of the superlattice film.

Confinement-Induced Glassy Dynamics in a Model for Chromosome Organization.

Recent experiments showing scaling of the intrachromosomal contact probability, P(s)∼s(-1) with the genomic distance s, are interpreted to mean a self-similar fractal-like chromosome organization. However, scaling of P(s) varies across organisms, requiring an explanation. We illustrate dynamical arrest in a highly confined space as a discriminating marker for genome organization, by modeling chromosomes inside a nucleus as a homopolymer confined to a sphere of varying sizes. Brownian dynamics simulations show that the chain dynamics slows down as the polymer volume fraction (ϕ) inside the confinement approaches a critical value ϕ(c). The universal value of ϕ(c)(∞)≈0.44 for a sufficiently long polymer (N≫1) allows us to discuss genome dynamics using ϕ as the sole parameter. Our study shows that the onset of glassy dynamics is the reason for the segregated chromosome organization in humans (N≈3×10(9), ϕ≳ϕ(c)(∞)), whereas chromosomes of budding yeast (N≈10(8), ϕ<ϕ(c)(∞)) are equilibrated with no clear signature of such organization.

Exchange symmetry, fluctuation-compressibility relation, and thermodynamic potentials of quantum liquids.

Liquid helium does not obey the Gibbs fluctuation-compressibility relation, which was noted more than six decades ago. However, still missing is a clear explanation of the reason for the deviation or the correct fluctuation-compressibility relation for the quantum liquid. Here we present the fluctuation-compressibility relation valid for any grand canonical system. Our result shows that the deviation from the Gibbs formula arises from a nonextensive part of thermodynamic potentials. The particle-exchange symmetry of many-body wave function of a strongly degenerate quantum gas is related to the thermodynamic extensivity of the system; a Bose gas does not always obey the Gibbs formula, while a Fermi gas does. Our fluctuation-compressibility relation works for classical systems as well as quantum systems. This work demonstrates that the application range of the Gibbs-Boltzmann statistical thermodynamics can be extended to encompass nonextensive open systems without introducing any postulate other than the principle of equal a priori probability.

Defective carbon nanotubes with stone-wales defect arrays.

Presented herein are the structural and electronic properties of defective (n, n) carbon nanotubes (CNTs) (n = 3, 4, 5, 6) and of a defective graphene sheet, obtained form first-principles calculations of their electronic band strucutres. CNTs are newly discovered nanostructures with promising electronic and structural properties desired for nanoscale device applications. To enhance their functionality, various methods, such as ion implantation and ion irradiation, have been suggested for the manipulation of single-wall CNTs (SWNTs). In this study, periodic Stone-Wales defect arrays were considered. Defective (n, n) CNTs and a defective graphene sheet were analyzed in terms of their geometries and defect formation energies. In particular, the defective (5, 5) CNT was compared with the C60 fullerene and the perfect (5, 5) CNT in polygon structures and total energies. The electronic band structures via first-principles calculations were also analyzed. A significant difference was found between the electronic band structures determined via first-principles calculations and those determined with the use of a one-parameter tight-binding model.