Electrical Property Variations in Organic Bistable Devices Utilizing CdSe/CdS/ZnS Core-Shell-Shell Nanoparticle Layer Embedded in a Polystyrene Layer Due to an Inserted WO3 Layer.

Organic bistable devices (OBDs) based on CdSe/CdS/ZnS core-shell-shell nanoparticles embedded in a polystyrene (PS) layer with an inserted WO3 layer were fabricated by using the spin coating method and the thermal evaporation. The current density-voltage (J-V) curves for the Al/CdSe/CdS/ZnS core-shell-shell nanoparticles embedded in PS layer/WO3/ITO devices with different thicknesses of WO3 layers exhibited electrical bistabilities. Simulated J-V curves for the OBDs containing CdSe/CdS/ZnS core-shell-shell nanoparticles were in reasonable agreement with the experimental results. The simulated J-V characteristics for the OBDs at various trap densities utilizing the double Gaussian distribution showed that the current level decreased with increasing shallow trap density and that the transition voltage increased with increasing deep trap density.

Dependences of the electrical properties on the diameter and the doping concentration of the Si nanowire field effect transistors with a Schottky metal-semiconductor contact.

A compact model of the current-voltage (I-V) characteristics for the Si nanowire field effect transistor (FET) taking into account dependence of the analytical electrical properties on the diameter and the concentration of the Si nanowire of the FETs with a Schottky metal-semiconductor contact has been proposed. I-V characteristics of the nanowire FETs were analytically calculated by using a quantum drift-diffusion current transport model taking into account an equivalent circuit together with the quantum effect of the Si nanowires and a Schottky model at Schottky barriers. The material parameters dependent on different diameters and concentrations of the Si nanowire were numerically estimated from the physical properties of the Si nanowire. The threshold voltage, the mobility, and the doping density of the Si nanowire and the Schottky barrier height at a metal-Si nanowire heterointerface in the nanowire FET were estimated by using the theoretical model.

White light-emitting diodes fabricated utilizing hybrid polymer-colloidal ZnO quantum dots.

White light-emitting diodes (WLEDs) with a hybrid poly N-vinylcarbazole (PVK) and poly(methyl methacrylate) (PMMA) polymer and ZnO quantum dots (QDs) were fabricated by a spin-coating technique. Transmission electron microscopy images showed that the ZnO QDs were predominantly distributed at the circumference of the surface of the PVK polymer. Electroluminescence spectra for hybrid polymer-QD WLEDs showed a broad peak around 600 nm. The Commission Internationale de I'Eclairage chromaticity coordinates of the WLEDs fabricated utilizing hybrid polymer-QD WLEDs at 10 V were (0.39, 0.41), indicative of a white emission. The luminescence mechanisms of the WLEDs are described.